Showing 13045–13056 of 15245 results
STMicroelectronics STH240N75F3-2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
100 ns |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Series |
STripFET™ III |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Base Part Number |
STH240 |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Temperature |
-55°C~175°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
87nC @ 10V |
| Rise Time |
70ns |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
180A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
3Ohm |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
720A |
| Avalanche Energy Rating (Eas) |
600 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STH260N6F6-6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
144.4 ns |
| Resistance |
1.7mOhm |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Series |
DeepGATE™, STripFET™ VI |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
300W Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Weight |
1.59999g |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Factory Lead Time |
20 Weeks |
| Base Part Number |
STH260 |
| Gate Charge (Qg) (Max) @ Vgs |
183nC @ 10V |
| Drain to Source Breakdown Voltage |
60V |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
180A |
| Fall Time (Typ) |
62.6 ns |
| Vgs (Max) |
±20V |
| Rise Time |
165ns |
| Input Capacitance (Ciss) (Max) @ Vds |
11800pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 60A, 10V |
| FET Type |
N-Channel |
| Turn On Delay Time |
31.4 ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STH265N6F6-6AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
20 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STH265 |
| Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.1m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
183nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
180A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STH320N4F6-6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
190 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
200A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
20 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Base Part Number |
STH320 |
| Power Dissipation (Max) |
300W Tc |
| Power Dissipation |
300W |
| Fall Time (Typ) |
95 ns |
| Continuous Drain Current (ID) |
200A |
| Rds On (Max) @ Id, Vgs |
1.3m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13800pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
98ns |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
28 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Height |
4.8mm |
| Length |
15.25mm |
| Width |
10.4mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STH360N4F6-2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
DeepGATE™, STripFET™ VI |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Configuration |
Single |
| Base Part Number |
STH360 |
| Number of Channels |
1 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.25m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
17930pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
340nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
180A |
| Gate to Source Voltage (Vgs) |
20V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STH6N95K5-2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Packaging |
Cut Tape (CT) |
| Series |
MDmesh™ K5 |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Drain to Source Voltage (Vdss) |
950V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.25 Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
450pF @ 100V |
| JESD-30 Code |
R-PSSO-G2 |
| Base Part Number |
STH6N |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
6A |
| Drain Current-Max (Abs) (ID) |
6A |
| Pulsed Drain Current-Max (IDM) |
24A |
| DS Breakdown Voltage-Min |
950V |
| Avalanche Energy Rating (Eas) |
90 mJ |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |
STMicroelectronics STH80N10F7-2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
2 |
| Power Dissipation (Max) |
110W Tc |
| Number of Channels |
1 |
| Turn Off Delay Time |
36 ns |
| Packaging |
Cut Tape (CT) |
| Series |
DeepGATE™, STripFET™ VII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW-ON RESISTANCE |
| Terminal Form |
GULL WING |
| Base Part Number |
STH80N |
| Mount |
Surface Mount |
| Factory Lead Time |
37 Weeks |
| Rise Time |
32ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.5m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3100pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13 ns |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0095Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Height |
4.8mm |
| Length |
10.4mm |
| Width |
9.17mm |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
110W |
| Lead Free |
Lead Free |
STMicroelectronics STI13NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Turn Off Delay Time |
30 ns |
| Power Dissipation |
90W |
| Factory Lead Time |
16 Weeks |
| Series |
MDmesh™ II |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
360MOhm |
| Base Part Number |
STI13N |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
-55°C~150°C TJ |
| Case Connection |
DRAIN |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
25V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
360m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
790pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Rise Time |
8ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
11A |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
44A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Height |
10.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STI150N10F7
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
72 ns |
| Resistance |
3.6mOhm |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Series |
STripFET™ |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
250W Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Weight |
2.084002g |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Base Part Number |
STI150N |
| Gate Charge (Qg) (Max) @ Vgs |
117nC @ 10V |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
110A |
| Fall Time (Typ) |
33 ns |
| Vgs (Max) |
±20V |
| Drain to Source Voltage (Vdss) |
100V |
| Rise Time |
57ns |
| Input Capacitance (Ciss) (Max) @ Vds |
8115pF @ 50V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Rds On (Max) @ Id, Vgs |
4.2m Ω @ 55A, 10V |
| FET Type |
N-Channel |
| Turn On Delay Time |
33 ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STI18N60M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
16 Weeks |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STI18N |
| JESD-30 Code |
R-PSIP-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Transistor Application |
SWITCHING |
| Polarity/Channel Type |
N-CHANNEL |
| Drain Current-Max (Abs) (ID) |
13A |
| Drain-source On Resistance-Max |
0.28Ohm |
| Pulsed Drain Current-Max (IDM) |
52A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
135 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STI20N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
17 Weeks |
| Packaging |
Tube |
| Series |
MDmesh™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STI20N |
| Power Dissipation (Max) |
130W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
7.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1434pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Rise Time |
7.5ns |
| Power Dissipation |
130W |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
18A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
72A |
| Avalanche Energy Rating (Eas) |
270 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STI25NM60ND
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
50 ns |
| Series |
FDmesh™ II |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Base Part Number |
STI25N |
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
40 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 10.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Rise Time |
30ns |
| Power Dissipation |
160W |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
21A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.16Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
84A |
| Avalanche Energy Rating (Eas) |
850 mJ |
| Radiation Hardening |
No |
| Turn On Delay Time |
60 ns |
| RoHS Status |
ROHS3 Compliant |