Showing 13057–13068 of 15245 results
STMicroelectronics STI32N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MDmesh™ V |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
53 ns |
| Operating Temperature |
150°C TJ |
| Pin Count |
3 |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE ENERGY RATED |
| Base Part Number |
STI32N |
| Packaging |
Tube |
| Element Configuration |
Single |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
24A |
| Turn On Delay Time |
53 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
119m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3320pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
72nC @ 10V |
| Rise Time |
12ns |
| Vgs (Max) |
±25V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.119Ohm |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
96A |
| Avalanche Energy Rating (Eas) |
650 mJ |
| Height |
10.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STI34N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-262-3 Full Pack, I2Pak |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
28A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Base Part Number |
STI34N |
| Mount |
Through Hole |
| Packaging |
Tube |
| Series |
MDmesh™ V |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Power Dissipation (Max) |
190W Tc |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Rise Time |
8.7ns |
| Vgs (Max) |
±25V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
110m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
62.5nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
190W |
| Fall Time (Typ) |
7.5 ns |
| Continuous Drain Current (ID) |
28A |
| JEDEC-95 Code |
TO-262AA |
| Drain-source On Resistance-Max |
0.11Ohm |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
112A |
| Avalanche Energy Rating (Eas) |
510 mJ |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STI400N4F6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Weight |
1.437803g |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
DeepGATE™, STripFET™ VI |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STI400N |
| Number of Channels |
1 |
| Element Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.7m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
20000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
377nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STI4N62K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
29 ns |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
1.437803g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
SuperMESH3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STI4N |
| Pin Count |
3 |
| Power Dissipation (Max) |
70W Tc |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
3.8A |
| Threshold Voltage |
3.75V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2 Ω @ 1.9A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
550pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
| Rise Time |
9ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
19 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
10 ns |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
620V |
| Nominal Vgs |
3.75 V |
| Height |
10.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STI6N95K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Packaging |
Tube |
| Series |
MDmesh™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STI6N |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STK184N4F7AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Package / Case |
SC-100, SOT-669 |
| Supplier Device Package |
LFPAK56, Power-SO8 |
| Base Product Number |
STK184 |
| Brand |
STMicroelectronics |
| Continuous Drain Current Id |
100 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Factory Pack Quantity:Factory Pack Quantity |
3000 |
| Mfr |
STMicroelectronics |
| Package |
Bulk |
| Power Dissipation (Max) |
136W (Tc) |
| Product Status |
Active |
| Qualification |
AEC-Q100 |
| Mounting Type |
Surface Mount |
| Subcategory |
MOSFETs |
| Packaging |
MouseReel |
| Technology |
MOSFET (Metal Oxide) |
| Power Dissipation |
136 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
2750 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
35 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
40 V |
| Vgs (Max) |
±20V |
| Product Type |
MOSFET |
| Channel Type |
N |
| Product Category |
MOSFET |
STMicroelectronics STL10N3LLH5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta 50W Tc |
| Pin Count |
8 |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
11.7Ohm |
| Additional Feature |
ULTRA LOW-ON RESISTANCE |
| Terminal Position |
DUAL |
| Base Part Number |
STL10 |
| Turn Off Delay Time |
21 ns |
| Element Configuration |
Single |
| Fall Time (Typ) |
3.5 ns |
| Continuous Drain Current (ID) |
9A |
| Turn On Delay Time |
4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
19m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
6nC @ 4.5V |
| Rise Time |
4.2ns |
| Vgs (Max) |
±22V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
50W |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
22V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
36A |
| Avalanche Energy Rating (Eas) |
150 mJ |
| Nominal Vgs |
1 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STL10N60M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
5.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Turn Off Delay Time |
32.5 ns |
| Operating Temperature |
150°C TJ |
| Power Dissipation (Max) |
48W Tc |
| Packaging |
Cut Tape (CT) |
| Series |
MDmesh™ II Plus |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
580mOhm |
| Mount |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
13.5nC @ 10V |
| Rise Time |
8ns |
| Element Configuration |
Single |
| Turn On Delay Time |
8.8 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
660m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 100V |
| Base Part Number |
STL10 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
13.2 ns |
| Continuous Drain Current (ID) |
5.5A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
STMicroelectronics STL115N10F7AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Package / Case |
8-PowerVDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
107A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Power Dissipation (Max) |
136W Tc |
| Base Part Number |
STL115 |
| Input Capacitance (Ciss) (Max) @ Vds |
5600pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
72.5nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 53A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| JESD-30 Code |
R-PDSO-F5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain-source On Resistance-Max |
0.006Ohm |
| Pulsed Drain Current-Max (IDM) |
428A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
490 mJ |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STL11N6F7
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
2.9W Ta 48W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STL11 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1035pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
11A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STL120N2VH5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Power Dissipation (Max) |
80W Tc |
| Turn Off Delay Time |
76 ns |
| Power Dissipation |
80W |
| Mount |
Surface Mount |
| Series |
STripFET™ V |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
3MOhm |
| Base Part Number |
STL120 |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Turn On Delay Time |
21 ns |
| Threshold Voltage |
700mV |
| Gate to Source Voltage (Vgs) |
8V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4660pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 2.5V |
| Rise Time |
60ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
55 ns |
| Continuous Drain Current (ID) |
120A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 14A, 4.5V |
| Drain to Source Breakdown Voltage |
20V |
| Height |
880μm |
| Length |
4.75mm |
| Width |
5.75mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STL120N4F6AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
20 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Current - Continuous Drain (Id) @ 25℃ |
55A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
96W Tc |
| Operating Temperature |
175°C TJ |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STL120 |
| Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.6m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
55A |
| Drain Current-Max (Abs) (ID) |
120A |
| RoHS Status |
ROHS3 Compliant |