Showing 13069–13080 of 15245 results
STMicroelectronics STL12P6F6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
75W Tc |
| Turn Off Delay Time |
14 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Series |
DeepGATE™, STripFET™ VI |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
20 Weeks |
| Turn On Delay Time |
6.4 ns |
| Base Part Number |
STL12 |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
340pF @ 48V |
| Gate Charge (Qg) (Max) @ Vgs |
6.4nC @ 10V |
| Rise Time |
5.3ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.7 ns |
| Continuous Drain Current (ID) |
4A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-60V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STL13N60DM2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
52W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
MDmesh™ DM2 |
| Part Status |
Active |
| Factory Lead Time |
26 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Base Part Number |
STL13 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
370m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
730pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STL140N4LLF5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
140A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
80W Tc |
| Turn Off Delay Time |
90 ns |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
STripFET™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
2.75MOhm |
| Terminal Position |
DUAL |
| Base Part Number |
STL140 |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-N5 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Fall Time (Typ) |
21 ns |
| Power Dissipation |
80W |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.75m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 4.5V |
| Rise Time |
29ns |
| Vgs (Max) |
±22V |
| Continuous Drain Current (ID) |
140A |
| Threshold Voltage |
1V |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
22V |
| Drain Current-Max (Abs) (ID) |
32A |
| Drain to Source Breakdown Voltage |
40V |
| Height |
880μm |
| Length |
4.75mm |
| Width |
5.75mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
STMicroelectronics STL15N3LLH5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STL15 |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta 50W Tc |
| Turn Off Delay Time |
22.7 ns |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 4.5V |
| Rise Time |
14.5ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
50W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9.3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.4m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 25V |
| JESD-30 Code |
S-PDSO-N5 |
| Pin Count |
8 |
| Vgs (Max) |
±22V |
| Fall Time (Typ) |
4.5 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
22V |
| Drain-source On Resistance-Max |
0.007Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
STMicroelectronics STL15N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
11 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Base Part Number |
STL15 |
| Factory Lead Time |
17 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
MDmesh™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
375mOhm |
| Power Dissipation (Max) |
52W Tc |
| Element Configuration |
Single |
| Fall Time (Typ) |
12.5 ns |
| Continuous Drain Current (ID) |
10A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
375m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
816pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
| Rise Time |
8ns |
| Vgs (Max) |
±25V |
| Power Dissipation |
52W |
| Turn On Delay Time |
30 ns |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Height |
1mm |
| Length |
5.4mm |
| Width |
6.35mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STL160N4F7
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
37 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
111W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ F7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STL160 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.5m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STL18N55M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.4A Ta 13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta 90W Tc |
| Turn Off Delay Time |
23 ns |
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| Series |
MDmesh™ V |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
270MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Operating Temperature |
150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Rise Time |
9.5ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
270m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1352pF @ 100V |
| Base Part Number |
STL18 |
| Pin Count |
4 |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
550V |
| Pulsed Drain Current-Max (IDM) |
9.6A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STL18N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
57W Tc |
| JESD-30 Code |
R-PDSO-F5 |
| Factory Lead Time |
17 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
MDmesh™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
240mOhm |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Base Part Number |
STL18 |
| Turn Off Delay Time |
9 ns |
| Number of Channels |
2 |
| Rise Time |
7ns |
| Vgs (Max) |
±25V |
| Power Dissipation |
57W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
36 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1240pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
1mm |
| Length |
5.4mm |
| Width |
6.35mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STL18NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
5 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.1A Ta 12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta 110W Tc |
| Turn Off Delay Time |
50 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount |
| Series |
MDmesh™ II |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
310mOhm |
| Terminal Position |
DUAL |
| Base Part Number |
STL18 |
| Pin Count |
5 |
| Element Configuration |
Single |
| Operating Temperature |
150°C TJ |
| Power Dissipation |
110W |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
3V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
310m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
22ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
40 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| Gate to Source Voltage (Vgs) |
25V |
| Drain Current-Max (Abs) (ID) |
2.1A |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
8.4A |
| Height |
950μm |
| Length |
8mm |
| Width |
8mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STL19N60DM2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
90W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
MDmesh™ DM2 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Base Part Number |
STL19 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
320m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
11A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STL19N60M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
90W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
MDmesh™ M2 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STL19 |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
791pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
21.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
11A |
| Drain to Source Resistance |
278mOhm |
| RoHS Status |
ROHS3 Compliant |