Showing 13105–13116 of 15245 results
STMicroelectronics STL75NH3LL
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
60W Tc |
| Turn Off Delay Time |
30 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Series |
STripFET™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
5.7mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
LOW THRESHOLD |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
24nC @ 4.5V |
| Pin Count |
8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
60W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.7m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1810pF @ 25V |
| Rise Time |
65ns |
| Vgs (Max) |
±16V |
| Base Part Number |
STL75 |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
75A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
20A |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Nominal Vgs |
1 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PDSO-N5 |
| Lead Free |
Lead Free |
STMicroelectronics STL80N3LLH6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
60W Tc |
| Turn Off Delay Time |
37 ns |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Series |
DeepGATE™, STripFET™ VI |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
5.2MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1690pF @ 25V |
| JESD-30 Code |
R-PDSO-N5 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
60W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.2m Ω @ 10.5A, 10V |
| Base Part Number |
STL80 |
| Pin Count |
8 |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 4.5V |
| Rise Time |
30ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STL80N75F6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STL80 |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
80W Tc |
| Series |
DeepGATE™, STripFET™ VI |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Resistance |
6.3MOhm |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
7120pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
80W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.3m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| JESD-30 Code |
R-PDSO-N5 |
| Pin Count |
8 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
74A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |
STMicroelectronics STL8N10LF3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
4.3W Ta 70W Tc |
| JESD-30 Code |
R-PDSO-F5 |
| Turn Off Delay Time |
50.6 ns |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Base Part Number |
STL8 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
20.5nC @ 10V |
| Element Configuration |
Single |
| Power Dissipation |
70W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
970pF @ 25V |
| Rise Time |
9.6ns |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Fall Time (Typ) |
5.2 ns |
| Continuous Drain Current (ID) |
20A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.05Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Max Junction Temperature (Tj) |
175°C |
| Height |
1mm |
| Radiation Hardening |
No |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STL8N6LF3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| ECCN Code |
EAR99 |
| Package / Case |
8-PowerVDFN |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Power Dissipation (Max) |
65W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Base Part Number |
STL8 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
30m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
668pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STL8NH3LL
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Obsolete |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta 50W Tc |
| Turn Off Delay Time |
18 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ |
| Base Part Number |
STL8 |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
9 |
| ECCN Code |
EAR99 |
| Resistance |
15mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
30V |
| Terminal Position |
QUAD |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
8A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
32ns |
| JESD-30 Code |
S-XQFP-N9 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
50W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
965pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 4.5V |
| Vgs (Max) |
±18V |
| Fall Time (Typ) |
8.5 ns |
| Pin Count |
9 |
| Continuous Drain Current (ID) |
8A |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
8A |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
32A |
| Height |
810μm |
| Length |
5mm |
| Width |
6mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
STMicroelectronics STL92N10F7AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Power Dissipation (Max) |
5W Ta 100W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
3100pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.5 Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Base Part Number |
STL92 |
| JESD-30 Code |
R-PDSO-F5 |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
16A |
| Drain-source On Resistance-Max |
0.0095Ohm |
| Pulsed Drain Current-Max (IDM) |
64A |
| DS Breakdown Voltage-Min |
100V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STL9N3LLH5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ V |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta 50W Tc |
| Turn Off Delay Time |
21 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
8 |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STL9 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
4.2ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
50W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
19m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
724pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
5nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±22V |
| JESD-30 Code |
S-XDSO-N5 |
| Fall Time (Typ) |
3.5 ns |
| Continuous Drain Current (ID) |
9A |
| Gate to Source Voltage (Vgs) |
22V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain-source On Resistance-Max |
0.022Ohm |
| Pulsed Drain Current-Max (IDM) |
36A |
| DS Breakdown Voltage-Min |
30V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
STMicroelectronics STLD125N4F6AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
8-PowerWDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6.5V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
130W Tc |
| Series |
STripFET™ F6 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
20 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
5600pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
91nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Reference Standard |
AEC-Q101 |
| Base Part Number |
STLD125 |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
101A |
| Drain-source On Resistance-Max |
0.004Ohm |
| Pulsed Drain Current-Max (IDM) |
480A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
150 mJ |
| JESD-30 Code |
R-PDSO-F5 |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STN1NF20
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Base Part Number |
STN1N |
| Factory Lead Time |
12 Weeks |
| Packaging |
Cut Tape (CT) |
| Series |
STripFET™ II |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Power Dissipation (Max) |
2W Ta |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12.4 ns |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
90pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
5.7nC @ 10V |
| Rise Time |
5.6ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Continuous Drain Current (ID) |
1A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
1A |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
4A |
| Avalanche Energy Rating (Eas) |
70 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STN2NE10L
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Package / Case |
TO-261-4, TO-261AA |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Tc |
| Turn Off Delay Time |
22 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Series |
STripFET™ |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
100V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
1.8A |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 5V |
| Rise Time |
17ns |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
400m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
345pF @ 25V |
| Pin Count |
4 |
| Base Part Number |
STN2N |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
1.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
2A |
| Drain-source On Resistance-Max |
0.45Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
7.2A |
| Avalanche Energy Rating (Eas) |
20 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PDSO-G4 |
| Lead Free |
Lead Free |
STMicroelectronics STN4NF03L
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
SOT-223-P008 |
| Current - Continuous Drain (Id) @ 25℃ |
6.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.3W Tc |
| Turn Off Delay Time |
35 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
50mOhm |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
30V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
6.5A |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Vgs (Max) |
±16V |
| Pin Count |
4 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.3W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
330pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
9nC @ 10V |
| Rise Time |
100ns |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
6.5A |
| Base Part Number |
STN4N |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
4A |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
26A |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.8mm |
| Length |
6.5mm |
| Width |
3.5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |