Showing 13117–13128 of 15245 results
STMicroelectronics STN4NF06L
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.3W Tc |
| Turn Off Delay Time |
20 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
70mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
340pF @ 25V |
| Base Part Number |
STN4N |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.3W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
2.8V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
9nC @ 5V |
| Rise Time |
25ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
4A |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
4A |
| Drain to Source Breakdown Voltage |
60V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
4 |
| Lead Free |
Lead Free |
STMicroelectronics STN5PF02V
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Tc |
| Turn Off Delay Time |
38 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
-20V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
-5A |
| Series |
STripFET™ II |
| Base Part Number |
STN5P |
| Vgs(th) (Max) @ Id |
450mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
412pF @ 15V |
| Voltage |
20V |
| Element Configuration |
Single |
| Current |
42A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
80m Ω @ 2.1A, 4.5V |
| Pin Count |
4 |
| JESD-30 Code |
R-PDSO-G4 |
| Gate Charge (Qg) (Max) @ Vgs |
6nC @ 2.5V |
| Rise Time |
47ns |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
4.2A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain-source On Resistance-Max |
0.1Ohm |
| Drain to Source Breakdown Voltage |
-20V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP100N10F7
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Power Dissipation |
150W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
46 ns |
| Series |
DeepGATE™, STripFET™ VII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
8MOhm |
| Base Part Number |
STP100 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Threshold Voltage |
4.5V |
| JEDEC-95 Code |
TO-220AB |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4369pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
61nC @ 10V |
| Rise Time |
40ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
80A |
| Turn On Delay Time |
27 ns |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
STMicroelectronics STP100N6F7
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
22 Weeks |
| Packaging |
Tube |
| Series |
STripFET™ F7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Power Dissipation (Max) |
125W Tc |
| Base Part Number |
STP100 |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.6m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1980pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.0056Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP10N62K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
SuperMESH3™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
41 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
680mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
SINGLE |
| Base Part Number |
STP10 |
| Pin Count |
3 |
| Packaging |
Tube |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
8.4A |
| Threshold Voltage |
3.75V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1250pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
620V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
31 ns |
| Power Dissipation |
125W |
| Turn On Delay Time |
14.5 ns |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
650V |
| Avalanche Energy Rating (Eas) |
220 mJ |
| Nominal Vgs |
3.75 V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP10NK70ZFP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
46 ns |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STP10 |
| Pin Count |
3 |
| Power Dissipation (Max) |
35W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
4.5A |
| Threshold Voltage |
3.75V |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
850m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
90nC @ 10V |
| Rise Time |
19ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
19 ns |
| Power Dissipation |
35W |
| Case Connection |
ISOLATED |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
8.6A |
| Drain-source On Resistance-Max |
0.85Ohm |
| Drain to Source Breakdown Voltage |
700V |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP10NM65N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MDmesh™ II |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Turn Off Delay Time |
50 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
480mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Base Part Number |
STP10 |
| Pin Count |
3 |
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Threshold Voltage |
3V |
| Turn On Delay Time |
12 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
480m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
850pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
8ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
4.5A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Power Dissipation |
90W |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain to Source Breakdown Voltage |
650V |
| Nominal Vgs |
3 V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
STMicroelectronics STP110N7F6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
20 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
176W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
STripFET™ F6 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STP110 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 55A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5850pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Drain to Source Voltage (Vdss) |
68V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP11NK50ZFP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Number of Terminations |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
TO-220FP-7012510 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Case Connection |
ISOLATED |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
520MOhm |
| Additional Feature |
AVALANCHE RATED |
| Base Part Number |
STP11N |
| Pin Count |
3 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
30W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
30W |
| Mount |
Through Hole |
| Contact Plating |
Tin |
| Continuous Drain Current (ID) |
10A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
520m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1390pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
10A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
| Rise Time |
18ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Turn-Off Delay Time |
41 ns |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-220AB |
| Turn On Delay Time |
14.5 ns |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Max Junction Temperature (Tj) |
150°C |
| Height |
20mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
STMicroelectronics STP11NM60
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
6 ns |
| Pin Count |
3 |
| Mount |
Through Hole |
| Series |
MDmesh™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
450mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
600V |
| Current Rating |
11A |
| Base Part Number |
STP11N |
| Operating Temperature |
-65°C~150°C TJ |
| Element Configuration |
Single |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
11A |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
450m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±25V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
160W |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
44A |
| Height |
6.35mm |
| Length |
31.75mm |
| Width |
12.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP11NM60A
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Base Part Number |
STP11N |
| Series |
MDmesh™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
600V |
| Peak Reflow Temperature (Cel) |
245 |
| Reach Compliance Code |
not_compliant |
| Current Rating |
11A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
49nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
110W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
450m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1211pF @ 25V |
| Rise Time |
15ns |
| Vgs (Max) |
±30V |
| Pin Count |
3 |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
11A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.45Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
44A |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |