Showing 13129–13140 of 15245 results
STMicroelectronics STP11NM80
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MDmesh™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
46 ns |
| Operating Temperature |
-65°C~150°C TJ |
| Pin Count |
3 |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
400mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Voltage - Rated DC |
800V |
| Current Rating |
11A |
| Base Part Number |
STP11N |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Continuous Drain Current (ID) |
11A |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
400m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1630pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
43.6nC @ 10V |
| Rise Time |
17ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
44A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Height |
9.15mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
150W |
| Lead Free |
Lead Free |
STMicroelectronics STP120NF04
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ II |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
80 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
40V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Current Rating |
120A |
| Packaging |
Tube |
| Base Part Number |
STP120 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
50 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Rise Time |
220ns |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Continuous Drain Current (ID) |
50A |
| Threshold Voltage |
4.5V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.005Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
480A |
| Nominal Vgs |
4.5 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP12N120K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Power Dissipation (Max) |
250W Tc |
| Series |
MDmesh™ K5 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Base Part Number |
STP12 |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
44.2nC @ 10V |
| Drain to Source Voltage (Vdss) |
1200V |
| Power Dissipation |
250W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
690m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1370pF @ 100V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSFM-T3 |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
12A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.69Ohm |
| Pulsed Drain Current-Max (IDM) |
48A |
| Radiation Hardening |
No |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP12PF06
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
60W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
200mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
-60V |
| Current Rating |
-12A |
| Base Part Number |
STP12 |
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
850pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Rise Time |
40ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
3.4V |
| Power Dissipation |
60W |
| Operating Mode |
ENHANCEMENT MODE |
| Drain to Source Breakdown Voltage |
-60V |
| Pulsed Drain Current-Max (IDM) |
48A |
| Dual Supply Voltage |
60V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Nominal Vgs |
3.4 V |
| Height |
9.15mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
20 ns |
| Lead Free |
Lead Free |
STMicroelectronics STP130N10F3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Turn Off Delay Time |
52 ns |
| Base Part Number |
STP130 |
| Mount |
Through Hole |
| Series |
STripFET™ III |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
9.6MOhm |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
38ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
250W |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.6m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3305pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
57nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
7.2 ns |
| Continuous Drain Current (ID) |
120A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
450A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP13NK60ZFP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
35W Tc |
| Turn Off Delay Time |
61 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
12 Weeks |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Base Part Number |
STP13N |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
35W |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-220AB |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
550m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2030pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
92nC @ 10V |
| Rise Time |
14ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
4.5A |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
22 ns |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.55Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
52A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP140N4F6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
40 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
168W Tc |
| Series |
STripFET™ F6 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Base Part Number |
STP140 |
| FET Type |
N-Channel |
| Drain to Source Voltage (Vdss) |
40V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP14NF10
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ II |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
60W Tc |
| Turn Off Delay Time |
32 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
130mOhm |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
100V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Current Rating |
15A |
| Packaging |
Tube |
| Base Part Number |
STP14N |
| Rise Time |
25ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
60W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
460pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
15A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Avalanche Energy Rating (Eas) |
70 mJ |
| Height |
9.15mm |
| Length |
10.4mm |
| Width |
4.6mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP14NF12
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
60W Tc |
| Turn Off Delay Time |
32 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Base Part Number |
STP14N |
| Pin Count |
3 |
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Continuous Drain Current (ID) |
7A |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
460pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Rise Time |
25ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| Power Dissipation |
60W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
120V |
| Pulsed Drain Current-Max (IDM) |
56A |
| Avalanche Energy Rating (Eas) |
60 mJ |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Turn On Delay Time |
16 ns |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP14NK50Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
SuperMESH™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
54 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
340mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
500V |
| Current Rating |
14A |
| Base Part Number |
STP14N |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
6A |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
92nC @ 10V |
| Rise Time |
16ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
12 ns |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Element Configuration |
Single |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
48A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Nominal Vgs |
3.75 V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
150W |
| Lead Free |
Lead Free |
STMicroelectronics STP14NK50ZFP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
35W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
54 ns |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
AVALANCHE RATED |
| Base Part Number |
STP14N |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
6A |
| Threshold Voltage |
3.75V |
| Turn On Delay Time |
24 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
92nC @ 10V |
| Rise Time |
16ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
12 ns |
| Power Dissipation |
35W |
| Operating Mode |
ENHANCEMENT MODE |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
48A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Height |
9.3mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Case Connection |
ISOLATED |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP14NK60ZFP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Turn Off Delay Time |
62 ns |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
AVALANCHE RATED |
| Base Part Number |
STP14N |
| Pin Count |
3 |
| Operating Temperature |
-55°C~150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
6A |
| Threshold Voltage |
3.75V |
| Turn On Delay Time |
26 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2220pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Rise Time |
18ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
13 ns |
| Power Dissipation |
40W |
| Case Connection |
ISOLATED |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.5Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
54A |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |