Showing 13141–13152 of 15245 results
STMicroelectronics STP14NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Turn Off Delay Time |
42 ns |
| Pin Count |
3 |
| Factory Lead Time |
16 Weeks |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
320mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
SINGLE |
| Base Part Number |
STP14N |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Dual |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
3V |
| Turn On Delay Time |
10.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
320m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
816pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Rise Time |
9ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
32 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
90W |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
48A |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP150N3LLH6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STP150 |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
75 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
DeepGATE™, STripFET™ VI |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
3.3MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 4.5V |
| Rise Time |
18ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
110W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4040pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
46 ns |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
525 mJ |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
STMicroelectronics STP15N60M2-EP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Active |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ M2-EP |
| Factory Lead Time |
16 Weeks |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STP15N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
378m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
590pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
11A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP15NK50Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
62 ns |
| Packaging |
Tube |
| Series |
SuperMESH™ |
| Operating Temperature |
-50°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
HIGH VOLTAGE |
| Voltage - Rated DC |
500V |
| Current Rating |
14A |
| Base Part Number |
STP15N |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
7A |
| Threshold Voltage |
3.75V |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
340m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2260pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
106nC @ 10V |
| Rise Time |
23ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
56A |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
160W |
| Lead Free |
Lead Free |
STMicroelectronics STP165N10F4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
315W Tc |
| Pin Count |
3 |
| Factory Lead Time |
20 Weeks |
| Packaging |
Tube |
| Series |
DeepGATE™, STripFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
5.5MOhm |
| Base Part Number |
STP165 |
| Turn Off Delay Time |
154 ns |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
62ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
315W |
| Turn On Delay Time |
29.6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.5m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
106 ns |
| Continuous Drain Current (ID) |
120A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
480A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP16NF06FP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
25W Tc |
| Turn Off Delay Time |
17 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
60V |
| Current Rating |
11A |
| Base Part Number |
STP16N |
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Continuous Drain Current (ID) |
8A |
| Threshold Voltage |
4V |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
315pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Rise Time |
18ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6 ns |
| Power Dissipation |
25W |
| Operating Mode |
ENHANCEMENT MODE |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
44A |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
ISOLATED |
| Lead Free |
Lead Free |
STMicroelectronics STP16NF06L
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V 5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
20 ns |
| Pin Count |
3 |
| Factory Lead Time |
12 Weeks |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
90mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
60V |
| Current Rating |
16A |
| Base Part Number |
STP16N |
| Operating Temperature |
-55°C~175°C TJ |
| Number of Channels |
1 |
| Fall Time (Typ) |
12.5 ns |
| Continuous Drain Current (ID) |
16A |
| Power Dissipation |
45W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
90m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
345pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 5V |
| Rise Time |
37ns |
| Vgs (Max) |
±16V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
1V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
64A |
| Height |
9.15mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP16NF25
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ II |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Turn Off Delay Time |
35 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Resistance |
235MOhm |
| Terminal Finish |
Tin (Sn) |
| Base Part Number |
STP16N |
| Pin Count |
3 |
| Packaging |
Tube |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
6.5A |
| JEDEC-95 Code |
TO-220AB |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
235m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
680pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Rise Time |
17ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
17 ns |
| Power Dissipation |
90W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
52A |
| Dual Supply Voltage |
250V |
| Nominal Vgs |
3 V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP16NK60Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pin Count |
3 |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Turn Off Delay Time |
70 ns |
| Operating Temperature |
150°C TJ |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
38Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
600V |
| Current Rating |
14A |
| Base Part Number |
STP16N |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Continuous Drain Current (ID) |
14A |
| Threshold Voltage |
3.75V |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
420m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2650pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Rise Time |
25ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
56A |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
190W |
| Lead Free |
Lead Free |
STMicroelectronics STP16NK65Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
SuperMESH™ |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Turn Off Delay Time |
68 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
650V |
| Current Rating |
13A |
| Base Part Number |
STP16N |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
25ns |
| Element Configuration |
Single |
| Power Dissipation |
190W |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2750pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
89nC @ 10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
17 ns |
| JESD-30 Code |
R-PSFM-T3 |
| Continuous Drain Current (ID) |
13A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.5Ohm |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
52A |
| Avalanche Energy Rating (Eas) |
350 mJ |
| Radiation Hardening |
No |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP17N62K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Turn Off Delay Time |
91 ns |
| Base Part Number |
STP17N |
| Mount |
Through Hole |
| Series |
SuperMESH3™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
280mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE ENERGY RATED |
| Operating Temperature |
150°C TJ |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
94nC @ 10V |
| Rise Time |
26ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
190W |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 50V |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
63 ns |
| Continuous Drain Current (ID) |
15.5A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
620V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP17NF25
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Element Configuration |
Single |
| Turn Off Delay Time |
21 ns |
| Packaging |
Tube |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
165mOhm |
| Base Part Number |
STP17N |
| Pin Count |
3 |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
8.5A |
| Power Dissipation |
90W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
165m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
29.5nC @ 10V |
| Rise Time |
17.2ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8.8 ns |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Operating Mode |
ENHANCEMENT MODE |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Nominal Vgs |
3 V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
8.8 ns |
| Lead Free |
Lead Free |