Showing 13153–13164 of 15245 results
STMicroelectronics STP17NK40ZFP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
35W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Turn Off Delay Time |
55 ns |
| Packaging |
Tube |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STP17N |
| Pin Count |
3 |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
15A |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
23ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
13 ns |
| Threshold Voltage |
3.75V |
| Gate to Source Voltage (Vgs) |
30V |
| Power Dissipation |
35W |
| Drain-source On Resistance-Max |
0.25Ohm |
| Drain to Source Breakdown Voltage |
400V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Avalanche Energy Rating (Eas) |
450 mJ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Turn On Delay Time |
25 ns |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP180N10F3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
99.9 ns |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Base Part Number |
STP180 |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
STripFET™ III |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
5.1MOhm |
| Terminal Position |
SINGLE |
| Power Dissipation (Max) |
315W Tc |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
114.6nC @ 10V |
| Rise Time |
97.1ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
315W |
| Turn On Delay Time |
25.6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.1m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6665pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6.9 ns |
| Continuous Drain Current (ID) |
120A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
480A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP180N4F6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
20 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
190W Tc |
| Packaging |
Tube |
| Series |
STripFET™ F6 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STP180 |
| FET Type |
N-Channel |
| Drain to Source Voltage (Vdss) |
40V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP180NS04ZC
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
330W Tc |
| Pin Count |
3 |
| Mount |
Through Hole |
| Series |
SAFeFET™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Base Part Number |
STP180 |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
250ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
300W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.2m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4560pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
115 ns |
| Continuous Drain Current (ID) |
120A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0042Ohm |
| Drain to Source Breakdown Voltage |
33V |
| Pulsed Drain Current-Max (IDM) |
480A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP18N60DM2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220 |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
90W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ DM2 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Base Part Number |
STP18N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
295mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
3V |
| Input Capacitance |
800pF |
| Drain to Source Resistance |
260mOhm |
| Rds On Max |
295 mΩ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP18N65M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Power Dissipation (Max) |
110W Tc |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Series |
MDmesh™ M2 |
| Packaging |
Tube |
| Operating Temperature |
150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
46 ns |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Number of Pins |
3 |
| Package / Case |
TO-220-3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Base Part Number |
STP18N |
| Drain to Source Voltage (Vdss) |
650V |
| Width |
4.6mm |
| Length |
10.4mm |
| Height |
15.75mm |
| Gate to Source Voltage (Vgs) |
25V |
| Continuous Drain Current (ID) |
12A |
| Vgs (Max) |
±25V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
770pF @ 100V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Rds On (Max) @ Id, Vgs |
330m Ω @ 6A, 10V |
| FET Type |
N-Channel |
| Turn On Delay Time |
11 ns |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP20N60M2-EP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
110W Tc |
| Series |
MDmesh™ M2-EP |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STP20N |
| FET Type |
N-Channel |
| Drain to Source Voltage (Vdss) |
600V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP20NM50FD
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
FDmesh™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
192W Tc |
| Operating Temperature |
-65°C~150°C TJ |
| Base Part Number |
STP20N |
| Factory Lead Time |
16 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
250mOhm |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
500V |
| Current Rating |
20A |
| Packaging |
Tube |
| Pin Count |
3 |
| Rise Time |
20ns |
| Vgs (Max) |
±30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
192W |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1380pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
53nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
20A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP20NM60FP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
42 ns |
| Operating Temperature |
150°C TJ |
| Series |
MDmesh™ |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
290mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Voltage - Rated DC |
650V |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
20A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STP20N |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Continuous Drain Current (ID) |
20A |
| Threshold Voltage |
4V |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
290m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
54nC @ 10V |
| Rise Time |
20ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
11 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
650 mJ |
| Height |
9.3mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
45W |
| Lead Free |
Lead Free |
STMicroelectronics STP20NM65N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pin Count |
3 |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
75 ns |
| Packaging |
Tube |
| Series |
MDmesh™ II |
| Operating Temperature |
150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
270mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Base Part Number |
STP20N |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
15A |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
270m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1280pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Rise Time |
10ns |
| Vgs (Max) |
±25V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
160W |
| Lead Free |
Lead Free |
STMicroelectronics STP21NM60ND
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
70 ns |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Series |
FDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
220mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Base Part Number |
STP21N |
| Pin Count |
3 |
| Operating Temperature |
150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
17A |
| Threshold Voltage |
4V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
220m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Rise Time |
16ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
48 ns |
| Power Dissipation |
140W |
| Turn On Delay Time |
18 ns |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP22NS25Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MESH OVERLAY™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
135W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
22A |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
150mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
250V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
151nC @ 10V |
| Rise Time |
30ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
135W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 25V |
| Base Part Number |
STP22N |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
78 ns |
| Continuous Drain Current (ID) |
22A |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
88A |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |