Showing 13165–13176 of 15245 results
STMicroelectronics STP23N80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
190W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ K5 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STP23N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
33nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
16A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP23NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
71 ns |
| Packaging |
Tube |
| Series |
MDmesh™ II |
| Operating Temperature |
150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
190mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Base Part Number |
STP23N |
| Pin Count |
3 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1330pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Rise Time |
19ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
29 ns |
| Continuous Drain Current (ID) |
17A |
| Threshold Voltage |
3V |
| Turn On Delay Time |
6.6 ns |
| Power Dissipation |
125W |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Avalanche Energy Rating (Eas) |
254 mJ |
| Nominal Vgs |
3 V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
STMicroelectronics STP23NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
90 ns |
| Packaging |
Tube |
| Series |
MDmesh™ II |
| Operating Temperature |
150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
15ns |
| Vgs (Max) |
±25V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
35W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 9.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2050pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Pin Count |
3 |
| Base Part Number |
STP23N |
| Fall Time (Typ) |
36 ns |
| Continuous Drain Current (ID) |
9.5A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain Current-Max (Abs) (ID) |
19A |
| Drain-source On Resistance-Max |
0.18Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
76A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP24N60DM2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
60 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
329.988449mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Base Part Number |
STP24N |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
FDmesh™ II Plus |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Element Configuration |
Single |
| Power Dissipation |
150W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1055pF @ 100V |
| Rise Time |
8.7ns |
| Vgs (Max) |
±25V |
| Number of Channels |
1 |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
18A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.2Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
72A |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
STMicroelectronics STP25N80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Base Part Number |
STP25N |
| Turn Off Delay Time |
60 ns |
| Packaging |
Tube |
| Series |
SuperMESH5™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
190mOhm |
| Terminal Finish |
Tin (Sn) |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Continuous Drain Current (ID) |
19.5A |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
260m Ω @ 19.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Vgs (Max) |
±30V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Element Configuration |
Single |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
78A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
STMicroelectronics STP25NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MDmesh™ |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
75 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
22A |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
140mOhm |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
550V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
84nC @ 10V |
| Base Part Number |
STP25N |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
160W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
140m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2565pF @ 25V |
| Rise Time |
23ns |
| Vgs (Max) |
±25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
22A |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
88A |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
STMicroelectronics STP265N6F6AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
38 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Base Part Number |
STP265 |
| Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.85m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
183nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
180A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP26N60DM6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
130W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
MDmesh™ DM6 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STP26N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
195m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
4.75V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
940pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| RoHS Status |
RoHS Compliant |
STMicroelectronics STP28N65M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
170W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
59 ns |
| Series |
MDmesh™ M2 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STP28N |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| Turn On Delay Time |
13.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1440pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
20A |
| Power Dissipation |
170W |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
760 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Height |
19.68mm |
| Length |
10.4mm |
| Width |
4.6mm |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
STMicroelectronics STP28NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
62 ns |
| Element Configuration |
Single |
| Operating Temperature |
150°C TJ |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
158mOhm |
| Terminal Finish |
Tin (Sn) |
| Base Part Number |
STP28N |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Continuous Drain Current (ID) |
21A |
| Power Dissipation |
90W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
158m Ω @ 10.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1735pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
| Rise Time |
19ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
52 ns |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
84A |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
13.6 ns |
| Lead Free |
Lead Free |
STMicroelectronics STP2N80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Number of Channels |
1 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
329.988449mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
19 ns |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
SuperMESH5™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STP2N |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
2A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
95pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
3nC @ 10V |
| Continuous Drain Current (ID) |
2A |
| JEDEC-95 Code |
TO-220AB |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
8A |
| Avalanche Energy Rating (Eas) |
60.5 mJ |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
8 ns |
| Lead Free |
Lead Free |
STMicroelectronics STP2NK100Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
41.5 ns |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.85A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
SuperMESH™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
8.5Ohm |
| Base Part Number |
STP2N |
| Pin Count |
3 |
| Power Dissipation (Max) |
70W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-220AB |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.5 Ω @ 900mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
499pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
1.85A |
| Power Dissipation |
70W |
| Turn On Delay Time |
7.2 ns |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
2A |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
7.4A |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |