Showing 13177–13188 of 15245 results
STMicroelectronics STP30NM30N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
65 ns |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
90mOhm |
| Terminal Finish |
Tin (Sn) |
| Base Part Number |
STP30N |
| Pin Count |
3 |
| Operating Temperature |
-65°C~150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
30A |
| Threshold Voltage |
3V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
90m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Rise Time |
25ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Power Dissipation |
160W |
| Turn On Delay Time |
25 ns |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
300V |
| Avalanche Energy Rating (Eas) |
900 mJ |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP30NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MDmesh™ II |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
27A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Turn Off Delay Time |
115 ns |
| Operating Temperature |
150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
115mOhm |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Packaging |
Tube |
| Base Part Number |
STP30N |
| Input Capacitance (Ciss) (Max) @ Vds |
2740pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
94nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
190W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
115m Ω @ 13.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
20ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
27A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
900 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP30NM60ND
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-30 Code |
R-PSFM-T3 |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
110 ns |
| Series |
FDmesh™ II |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STP30N |
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
50ns |
| Vgs (Max) |
±25V |
| Power Dissipation |
190W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 12.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Element Configuration |
Single |
| Qualification Status |
Not Qualified |
| Fall Time (Typ) |
75 ns |
| Continuous Drain Current (ID) |
25A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.385Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Avalanche Energy Rating (Eas) |
900 mJ |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP33N60DM6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
190W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
MDmesh™ M6 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
128m Ω @ 12.5A, 10V |
| Vgs(th) (Max) @ Id |
4.75V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP33N60M6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Active |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
190W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
MDmesh™ M6 |
| Factory Lead Time |
16 Weeks |
| Base Part Number |
STP33N |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
125m Ω @ 12.5A, 10V |
| Vgs(th) (Max) @ Id |
4.75V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1515pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
33.4nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP34N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
59 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
28A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Base Part Number |
STP34N |
| Power Dissipation (Max) |
190W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
110mOhm |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Vgs (Max) |
±25V |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
59 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
110m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
62.5nC @ 10V |
| Continuous Drain Current (ID) |
28A |
| JEDEC-95 Code |
TO-220AB |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
190W |
| Lead Free |
Lead Free |
STMicroelectronics STP360N4F6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
1.8mOhm |
| Base Part Number |
STP360 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Power Dissipation |
300W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.8m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
17930pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
340nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP36N55M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
56 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
33A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
17 Weeks |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STP36N |
| Power Dissipation (Max) |
190W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
33A |
| JEDEC-95 Code |
TO-220AB |
| Turn On Delay Time |
56 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
80m Ω @ 16.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2670pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
62nC @ 10V |
| Vgs (Max) |
±25V |
| Power Dissipation |
190W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.08Ohm |
| Drain to Source Breakdown Voltage |
550V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP3N150
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn On Delay Time |
24 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
PowerMESH™ |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Resistance |
9Ohm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Base Part Number |
STP3N |
| Pin Count |
3 |
| Number of Elements |
1 |
| Power Dissipation-Max |
140W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
140W |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
2.5A |
| Threshold Voltage |
4V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
939pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
2.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
29.3nC @ 10V |
| Rise Time |
47ns |
| Drain to Source Voltage (Vdss) |
1500V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
61 ns |
| Turn-Off Delay Time |
45 ns |
| Transistor Application |
SWITCHING |
| FET Type |
N-Channel |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
1.5kV |
| Avalanche Energy Rating (Eas) |
450 mJ |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
9 Ω @ 1.3A, 10V |
| Lead Free |
Lead Free |
STMicroelectronics STP3NK50Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
2.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Rail/Tube |
| Series |
SuperMESH™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Base Part Number |
STP3N |
| Power Dissipation |
45W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.3 Ω @ 1.15A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
280pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
2.3A |
| Gate to Source Voltage (Vgs) |
30V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP40NF10
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
54 ns |
| Pin Count |
3 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
33mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
100V |
| Current Rating |
50A |
| Base Part Number |
STP40N |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
50A |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2180pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
62nC @ 10V |
| Rise Time |
63ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
28 ns |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
40A |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
200A |
| Height |
9.15mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
150W |
| Lead Free |
Lead Free |
STMicroelectronics STP40NF12
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Base Part Number |
STP40N |
| Contact Plating |
Tin |
| Packaging |
Tube |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
120V |
| Current Rating |
40A |
| Turn Off Delay Time |
84 ns |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Rise Time |
63ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Turn On Delay Time |
28 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
32m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1880pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
40A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.032Ohm |
| Drain to Source Breakdown Voltage |
120V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |