Showing 13189–13200 of 15245 results

Discrete Semiconductors

STMicroelectronics STP40NS15

In stock

SKU: STP40NS15-11
Manufacturer

STMicroelectronics

Series

MESH OVERLAY™

Package / Case

TO-220-3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

40A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

140W Tc

Turn Off Delay Time

85 ns

Operating Temperature

175°C TJ

Base Part Number

STP40N

Packaging

Tube

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

JESD-30 Code

R-PSFM-T3

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

140W

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

52m Ω @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

Rise Time

45ns

Vgs (Max)

±20V

Pin Count

3

Fall Time (Typ)

35 ns

Continuous Drain Current (ID)

40A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.052Ohm

Drain to Source Breakdown Voltage

150V

Pulsed Drain Current-Max (IDM)

160A

Avalanche Energy Rating (Eas)

500 mJ

Qualification Status

Not Qualified

RoHS Status

ROHS3 Compliant

STMicroelectronics STP410N4F7AG

In stock

SKU: STP410N4F7AG-11
Manufacturer

STMicroelectronics

Mounting Type

Through Hole

Package / Case

TO-220-3

Current - Continuous Drain (Id) @ 25℃

180A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

365W Tc

Packaging

Tube

Series

STripFET™ F7

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STP410

FET Type

N-Channel

Drain to Source Voltage (Vdss)

40V

RoHS Status

ROHS3 Compliant

STMicroelectronics STP45NF3LL

In stock

SKU: STP45NF3LL-11
Manufacturer

STMicroelectronics

Series

STripFET™ II

Mounting Type

Through Hole

Package / Case

TO-220-3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

45A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

70W Tc

Turn Off Delay Time

20 ns

Operating Temperature

-55°C~175°C TJ

Pin Count

3

Mount

Through Hole

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

30V

Current Rating

45A

Base Part Number

STP45N

Packaging

Tube

JESD-30 Code

R-PSFM-T3

Vgs (Max)

±16V

Fall Time (Typ)

21 ns

Power Dissipation

25W

Turn On Delay Time

17 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

18m Ω @ 22.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Rise Time

100ns

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current (ID)

45A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

16V

Drain-source On Resistance-Max

0.02Ohm

Drain to Source Breakdown Voltage

30V

Pulsed Drain Current-Max (IDM)

180A

Avalanche Energy Rating (Eas)

241 mJ

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

STMicroelectronics STP46N60M6

In stock

SKU: STP46N60M6-11
Manufacturer

STMicroelectronics

Series

MDmesh™ M6

Mounting Type

Through Hole

Package / Case

TO-220-3

Current - Continuous Drain (Id) @ 25℃

36A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

250W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Factory Lead Time

16 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

80m Ω @ 18A, 10V

Vgs(th) (Max) @ Id

4.75V @ 250μA

Drain to Source Voltage (Vdss)

600V

Vgs (Max)

±25V

RoHS Status

ROHS3 Compliant

STMicroelectronics STP4NB80

In stock

SKU: STP4NB80-11
Manufacturer

STMicroelectronics

JESD-609 Code

e3

Mounting Type

Through Hole

Package / Case

TO-220-3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

100W Tc

Operating Temperature

150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

800V

Peak Reflow Temperature (Cel)

245

Reach Compliance Code

not_compliant

Current Rating

4A

Series

PowerMESH™

Base Part Number

STP4N

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Rise Time

8ns

Qualification Status

Not Qualified

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

100W

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

3.3 Ω @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

920pF @ 25V

Pin Count

3

JESD-30 Code

R-PSFM-T3

Vgs (Max)

±30V

Fall Time (Typ)

9 ns

Continuous Drain Current (ID)

4A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

30V

Drain Current-Max (Abs) (ID)

4A

Drain to Source Breakdown Voltage

800V

Avalanche Energy Rating (Eas)

230 mJ

RoHS Status

Non-RoHS Compliant

Lead Free

Contains Lead

STMicroelectronics STP4NK50Z

In stock

SKU: STP4NK50Z-11
Manufacturer

STMicroelectronics

Base Part Number

STP4N

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

45W Tc

Turn Off Delay Time

21 ns

Operating Temperature

-55°C~150°C TJ

Series

SuperMESH™

JESD-609 Code

e3

Packaging

Tube

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Resistance

2.7Ohm

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

500V

Current Rating

3A

Mounting Type

Through Hole

Mount

Through Hole

Fall Time (Typ)

11 ns

Continuous Drain Current (ID)

3A

Power Dissipation

45W

Turn On Delay Time

10 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2.7 Ω @ 1.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Rise Time

7ns

Vgs (Max)

±30V

Element Configuration

Single

Pin Count

3

Threshold Voltage

3.75V

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

30V

Drain Current-Max (Abs) (ID)

3A

Drain to Source Breakdown Voltage

500V

Dual Supply Voltage

500V

Nominal Vgs

3.75 V

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Lead Free

Lead Free

STMicroelectronics STP4NK50ZFP

In stock

SKU: STP4NK50ZFP-11
Manufacturer

STMicroelectronics

Operating Mode

ENHANCEMENT MODE

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

20W Tc

Turn Off Delay Time

21 ns

Operating Temperature

-55°C~150°C TJ

Series

SuperMESH™

JESD-609 Code

e3

Packaging

Tube

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn) – annealed

Base Part Number

STP4N

Pin Count

3

Element Configuration

Single

Mounting Type

Through Hole

Mount

Through Hole

Threshold Voltage

3.75V

JEDEC-95 Code

TO-220AB

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2.7 Ω @ 1.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Rise Time

7ns

Vgs (Max)

±30V

Fall Time (Typ)

11 ns

Continuous Drain Current (ID)

3A

Case Connection

ISOLATED

Power Dissipation

20W

Gate to Source Voltage (Vgs)

30V

Drain Current-Max (Abs) (ID)

3A

Drain to Source Breakdown Voltage

500V

Dual Supply Voltage

500V

Nominal Vgs

3.75 V

Height

16.4mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

REACH SVHC

No SVHC

Turn On Delay Time

10 ns

RoHS Status

ROHS3 Compliant

STMicroelectronics STP4NK60Z

In stock

SKU: STP4NK60Z-11
Manufacturer

STMicroelectronics

Series

SuperMESH™

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

70W Tc

Turn Off Delay Time

29 ns

Operating Temperature

150°C TJ

Element Configuration

Single

Packaging

Tube

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

2Ohm

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

600V

Current Rating

4A

Base Part Number

STP4N

Pin Count

3

Mount

Through Hole

Factory Lead Time

12 Weeks

Threshold Voltage

3.75V

Power Dissipation

70W

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2 Ω @ 2A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Rise Time

9.5ns

Vgs (Max)

±30V

Fall Time (Typ)

16.5 ns

Continuous Drain Current (ID)

4A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

30V

Operating Mode

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID)

4A

Drain to Source Breakdown Voltage

600V

Dual Supply Voltage

600V

Nominal Vgs

3.75 V

Height

9.15mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

12 ns

Lead Free

Lead Free

STMicroelectronics STP4NK60ZFP

In stock

SKU: STP4NK60ZFP-11
Manufacturer

STMicroelectronics

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

25W Tc

Turn Off Delay Time

29 ns

Operating Mode

ENHANCEMENT MODE

Operating Temperature

150°C TJ

Series

SuperMESH™

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Resistance

2Ohm

Base Part Number

STP4N

Pin Count

3

Element Configuration

Single

Contact Plating

Tin

Factory Lead Time

12 Weeks

Threshold Voltage

3.75V

Case Connection

ISOLATED

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2 Ω @ 2A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Rise Time

9.5ns

Vgs (Max)

±30V

Fall Time (Typ)

16.5 ns

Continuous Drain Current (ID)

4A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

30V

Power Dissipation

25W

Drain Current-Max (Abs) (ID)

4A

Drain to Source Breakdown Voltage

600V

Dual Supply Voltage

600V

Nominal Vgs

3.75 V

Height

9.3mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

12 ns

Lead Free

Lead Free

STMicroelectronics STP52P3LLH6

In stock

SKU: STP52P3LLH6-11
Manufacturer

STMicroelectronics

Factory Lead Time

20 Weeks

Mounting Type

Through Hole

Package / Case

TO-220-3

Current - Continuous Drain (Id) @ 25℃

52A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

70W Tc

Packaging

Tube

Series

STripFET™ H6

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STP52

FET Type

N-Channel

Drain to Source Voltage (Vdss)

30V

RoHS Status

ROHS3 Compliant

STMicroelectronics STP55NF06L

In stock

SKU: STP55NF06L-11
Manufacturer

STMicroelectronics

Number of Terminations

3

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

4.535924g

Transistor Element Material

SILICON

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Series

STripFET™ II

JESD-609 Code

e3

Part Status

Active

Power Dissipation

95W

Factory Lead Time

12 Weeks

ECCN Code

EAR99

Resistance

18mOhm

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

60V

Current Rating

55A

Base Part Number

STP55N

Pin Count

3

Number of Elements

1

Power Dissipation-Max

95W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Case Connection

DRAIN

Continuous Drain Current (ID)

55A

Threshold Voltage

1.7V

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

18m Ω @ 27.5A, 10V

Vgs(th) (Max) @ Id

1.7V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

Current - Continuous Drain (Id) @ 25°C

55A Tc

Gate Charge (Qg) (Max) @ Vgs

37nC @ 4.5V

Rise Time

100ns

Drive Voltage (Max Rds On,Min Rds On)

10V 5V

Vgs (Max)

±16V

Fall Time (Typ)

20 ns

Turn-Off Delay Time

40 ns

Turn On Delay Time

20 ns

FET Type

N-Channel

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

16V

Drain to Source Breakdown Voltage

60V

Pulsed Drain Current-Max (IDM)

220A

Nominal Vgs

1.7 V

Height

9.15mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

STMicroelectronics STP5N105K5

In stock

SKU: STP5N105K5-11
Manufacturer

STMicroelectronics

Factory Lead Time

17 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Current - Continuous Drain (Id) @ 25℃

3A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

85W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

MDmesh™ K5

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STP5N

Configuration

Single

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

3.5 Ω @ 1.5A, 10V

Vgs(th) (Max) @ Id

5V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds

210pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

12.5nC @ 10V

Drain to Source Voltage (Vdss)

1050V

Vgs (Max)

±30V

Continuous Drain Current (ID)

3A

Drain Current-Max (Abs) (ID)

3A

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free