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Series
Discrete Semiconductors
STMicroelectronics STP40NS15
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
MESH OVERLAY™ |
Package / Case |
TO-220-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
140W Tc |
Turn Off Delay Time |
85 ns |
Operating Temperature |
175°C TJ |
Base Part Number |
STP40N |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
JESD-30 Code |
R-PSFM-T3 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
140W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
52m Ω @ 40A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 25V |
Rise Time |
45ns |
Vgs (Max) |
±20V |
Pin Count |
3 |
Fall Time (Typ) |
35 ns |
Continuous Drain Current (ID) |
40A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.052Ohm |
Drain to Source Breakdown Voltage |
150V |
Pulsed Drain Current-Max (IDM) |
160A |
Avalanche Energy Rating (Eas) |
500 mJ |
Qualification Status |
Not Qualified |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP410N4F7AG
In stock
Manufacturer |
STMicroelectronics |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
365W Tc |
Packaging |
Tube |
Series |
STripFET™ F7 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STP410 |
FET Type |
N-Channel |
Drain to Source Voltage (Vdss) |
40V |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP45NF3LL
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
STripFET™ II |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
45A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
70W Tc |
Turn Off Delay Time |
20 ns |
Operating Temperature |
-55°C~175°C TJ |
Pin Count |
3 |
Mount |
Through Hole |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
30V |
Current Rating |
45A |
Base Part Number |
STP45N |
Packaging |
Tube |
JESD-30 Code |
R-PSFM-T3 |
Vgs (Max) |
±16V |
Fall Time (Typ) |
21 ns |
Power Dissipation |
25W |
Turn On Delay Time |
17 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
18m Ω @ 22.5A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
17nC @ 5V |
Rise Time |
100ns |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Continuous Drain Current (ID) |
45A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
16V |
Drain-source On Resistance-Max |
0.02Ohm |
Drain to Source Breakdown Voltage |
30V |
Pulsed Drain Current-Max (IDM) |
180A |
Avalanche Energy Rating (Eas) |
241 mJ |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STP46N60M6
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
MDmesh™ M6 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
250W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Factory Lead Time |
16 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
80m Ω @ 18A, 10V |
Vgs(th) (Max) @ Id |
4.75V @ 250μA |
Drain to Source Voltage (Vdss) |
600V |
Vgs (Max) |
±25V |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP4NB80
In stock
Manufacturer |
STMicroelectronics |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
100W Tc |
Operating Temperature |
150°C TJ |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
800V |
Peak Reflow Temperature (Cel) |
245 |
Reach Compliance Code |
not_compliant |
Current Rating |
4A |
Series |
PowerMESH™ |
Base Part Number |
STP4N |
Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
Rise Time |
8ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
100W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
3.3 Ω @ 2A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
920pF @ 25V |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Vgs (Max) |
±30V |
Fall Time (Typ) |
9 ns |
Continuous Drain Current (ID) |
4A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
30V |
Drain Current-Max (Abs) (ID) |
4A |
Drain to Source Breakdown Voltage |
800V |
Avalanche Energy Rating (Eas) |
230 mJ |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Contains Lead |
STMicroelectronics STP4NK50Z
In stock
Manufacturer |
STMicroelectronics |
---|---|
Base Part Number |
STP4N |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
3A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
45W Tc |
Turn Off Delay Time |
21 ns |
Operating Temperature |
-55°C~150°C TJ |
Series |
SuperMESH™ |
JESD-609 Code |
e3 |
Packaging |
Tube |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Resistance |
2.7Ohm |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
500V |
Current Rating |
3A |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Fall Time (Typ) |
11 ns |
Continuous Drain Current (ID) |
3A |
Power Dissipation |
45W |
Turn On Delay Time |
10 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
2.7 Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds |
310pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
Rise Time |
7ns |
Vgs (Max) |
±30V |
Element Configuration |
Single |
Pin Count |
3 |
Threshold Voltage |
3.75V |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
30V |
Drain Current-Max (Abs) (ID) |
3A |
Drain to Source Breakdown Voltage |
500V |
Dual Supply Voltage |
500V |
Nominal Vgs |
3.75 V |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Operating Mode |
ENHANCEMENT MODE |
Lead Free |
Lead Free |
STMicroelectronics STP4NK50ZFP
In stock
Manufacturer |
STMicroelectronics |
---|---|
Operating Mode |
ENHANCEMENT MODE |
Package / Case |
TO-220-3 Full Pack |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
3A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
20W Tc |
Turn Off Delay Time |
21 ns |
Operating Temperature |
-55°C~150°C TJ |
Series |
SuperMESH™ |
JESD-609 Code |
e3 |
Packaging |
Tube |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) – annealed |
Base Part Number |
STP4N |
Pin Count |
3 |
Element Configuration |
Single |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Threshold Voltage |
3.75V |
JEDEC-95 Code |
TO-220AB |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
2.7 Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds |
310pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
Rise Time |
7ns |
Vgs (Max) |
±30V |
Fall Time (Typ) |
11 ns |
Continuous Drain Current (ID) |
3A |
Case Connection |
ISOLATED |
Power Dissipation |
20W |
Gate to Source Voltage (Vgs) |
30V |
Drain Current-Max (Abs) (ID) |
3A |
Drain to Source Breakdown Voltage |
500V |
Dual Supply Voltage |
500V |
Nominal Vgs |
3.75 V |
Height |
16.4mm |
Length |
10.4mm |
Width |
4.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
Turn On Delay Time |
10 ns |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP4NK60Z
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
SuperMESH™ |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
70W Tc |
Turn Off Delay Time |
29 ns |
Operating Temperature |
150°C TJ |
Element Configuration |
Single |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
2Ohm |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
600V |
Current Rating |
4A |
Base Part Number |
STP4N |
Pin Count |
3 |
Mount |
Through Hole |
Factory Lead Time |
12 Weeks |
Threshold Voltage |
3.75V |
Power Dissipation |
70W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
2 Ω @ 2A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds |
510pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
Rise Time |
9.5ns |
Vgs (Max) |
±30V |
Fall Time (Typ) |
16.5 ns |
Continuous Drain Current (ID) |
4A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
30V |
Operating Mode |
ENHANCEMENT MODE |
Drain Current-Max (Abs) (ID) |
4A |
Drain to Source Breakdown Voltage |
600V |
Dual Supply Voltage |
600V |
Nominal Vgs |
3.75 V |
Height |
9.15mm |
Length |
10.4mm |
Width |
4.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
12 ns |
Lead Free |
Lead Free |
STMicroelectronics STP4NK60ZFP
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
25W Tc |
Turn Off Delay Time |
29 ns |
Operating Mode |
ENHANCEMENT MODE |
Operating Temperature |
150°C TJ |
Series |
SuperMESH™ |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Resistance |
2Ohm |
Base Part Number |
STP4N |
Pin Count |
3 |
Element Configuration |
Single |
Contact Plating |
Tin |
Factory Lead Time |
12 Weeks |
Threshold Voltage |
3.75V |
Case Connection |
ISOLATED |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
2 Ω @ 2A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds |
510pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
Rise Time |
9.5ns |
Vgs (Max) |
±30V |
Fall Time (Typ) |
16.5 ns |
Continuous Drain Current (ID) |
4A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
30V |
Power Dissipation |
25W |
Drain Current-Max (Abs) (ID) |
4A |
Drain to Source Breakdown Voltage |
600V |
Dual Supply Voltage |
600V |
Nominal Vgs |
3.75 V |
Height |
9.3mm |
Length |
10.4mm |
Width |
4.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
12 ns |
Lead Free |
Lead Free |
STMicroelectronics STP52P3LLH6
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
20 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Current - Continuous Drain (Id) @ 25℃ |
52A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
70W Tc |
Packaging |
Tube |
Series |
STripFET™ H6 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STP52 |
FET Type |
N-Channel |
Drain to Source Voltage (Vdss) |
30V |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP55NF06L
In stock
Manufacturer |
STMicroelectronics |
---|---|
Number of Terminations |
3 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
4.535924g |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Series |
STripFET™ II |
JESD-609 Code |
e3 |
Part Status |
Active |
Power Dissipation |
95W |
Factory Lead Time |
12 Weeks |
ECCN Code |
EAR99 |
Resistance |
18mOhm |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
60V |
Current Rating |
55A |
Base Part Number |
STP55N |
Pin Count |
3 |
Number of Elements |
1 |
Power Dissipation-Max |
95W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Case Connection |
DRAIN |
Continuous Drain Current (ID) |
55A |
Threshold Voltage |
1.7V |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
18m Ω @ 27.5A, 10V |
Vgs(th) (Max) @ Id |
1.7V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1700pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
55A Tc |
Gate Charge (Qg) (Max) @ Vgs |
37nC @ 4.5V |
Rise Time |
100ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V 5V |
Vgs (Max) |
±16V |
Fall Time (Typ) |
20 ns |
Turn-Off Delay Time |
40 ns |
Turn On Delay Time |
20 ns |
FET Type |
N-Channel |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
16V |
Drain to Source Breakdown Voltage |
60V |
Pulsed Drain Current-Max (IDM) |
220A |
Nominal Vgs |
1.7 V |
Height |
9.15mm |
Length |
10.4mm |
Width |
4.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STP5N105K5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
17 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Current - Continuous Drain (Id) @ 25℃ |
3A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
85W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ K5 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STP5N |
Configuration |
Single |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3.5 Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id |
5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
210pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
12.5nC @ 10V |
Drain to Source Voltage (Vdss) |
1050V |
Vgs (Max) |
±30V |
Continuous Drain Current (ID) |
3A |
Drain Current-Max (Abs) (ID) |
3A |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |