Showing 13201–13212 of 15245 results
STMicroelectronics STP5N120
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
42 ns |
| Packaging |
Tube |
| Series |
SuperMESH™ |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
3.5Ohm |
| Base Part Number |
STP5N |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5 Ω @ 2.3A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
120pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
55nC @ 10V |
| Rise Time |
9ns |
| Drain to Source Voltage (Vdss) |
1200V |
| Power Dissipation |
160W |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
4.7A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
4.4A |
| Drain to Source Breakdown Voltage |
1.2kV |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
18 ns |
| Lead Free |
Lead Free |
STMicroelectronics STP5N52K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
29 ns |
| Pin Count |
3 |
| Mount |
Through Hole |
| Series |
SuperMESH3™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1.5Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Base Part Number |
STP5N |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
4.4A |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
450pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Rise Time |
11ns |
| Vgs (Max) |
±30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
70W |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
525V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP5N62K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
40 ns |
| Series |
SuperMESH3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1.6Ohm |
| Additional Feature |
ULTRA LOW-ON RESISTANCE |
| Base Part Number |
STP5N |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
4.2A |
| Threshold Voltage |
3.75V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6 Ω @ 2.1A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
680pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Rise Time |
8ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
21 ns |
| Power Dissipation |
70W |
| Operating Mode |
ENHANCEMENT MODE |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
620V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
12 ns |
| Lead Free |
Lead Free |
STMicroelectronics STP5NK40Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
SuperMESH™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
22.5 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
400V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Current Rating |
3A |
| Packaging |
Tube |
| Base Part Number |
STP5N |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Rise Time |
6ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
45W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.8 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
305pF @ 25V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
3A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
3A |
| Drain to Source Breakdown Voltage |
400V |
| Pulsed Drain Current-Max (IDM) |
12A |
| Avalanche Energy Rating (Eas) |
130 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP5NK60ZFP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
25W Tc |
| Turn Off Delay Time |
36 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
12 Weeks |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Base Part Number |
STP5N |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
25W |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-220AB |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6 Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
690pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Rise Time |
25ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
5A |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
16 ns |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
20A |
| Avalanche Energy Rating (Eas) |
220 mJ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP5NK80Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STP5N |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
9.071847g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
45 ns |
| Series |
PowerMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
2.4Ohm |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
800V |
| Current Rating |
4.3A |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
4.3A |
| Power Dissipation |
110W |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4 Ω @ 2.15A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
910pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
45.5nC @ 10V |
| Rise Time |
25ns |
| Vgs (Max) |
±30V |
| Element Configuration |
Single |
| Pin Count |
3 |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
800V |
| Height |
9.15mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
STMicroelectronics STP60NF06L
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
9.071847g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V 5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
55 ns |
| Base Part Number |
STP60N |
| Factory Lead Time |
12 Weeks |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
14mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD, AVALANCHE RATED |
| Voltage - Rated DC |
60V |
| Current Rating |
60A |
| Operating Temperature |
-65°C~175°C TJ |
| Pin Count |
3 |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
60A |
| Power Dissipation |
110W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 4.5V |
| Rise Time |
220ns |
| Vgs (Max) |
±15V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
1V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
15V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Height |
9.15mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP6N120K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
SuperMESH3™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
58 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
150W |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1.95Ohm |
| Base Part Number |
STP6N |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Contact Plating |
Tin |
| JEDEC-95 Code |
TO-220AB |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.4 Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1050pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Rise Time |
12ns |
| Drain to Source Voltage (Vdss) |
1200V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
32 ns |
| Continuous Drain Current (ID) |
6A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
6A |
| Turn On Delay Time |
30 ns |
| Drain to Source Breakdown Voltage |
1.2kV |
| Pulsed Drain Current-Max (IDM) |
20A |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
4 V |
| Height |
19.68mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
STMicroelectronics STP6N80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Base Part Number |
STP6N |
| Power Dissipation (Max) |
85W Tc |
| Packaging |
Tube |
| Series |
SuperMESH5™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
7.5nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
255pF @ 100V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
30V |
| JESD-30 Code |
R-PSFM-T3 |
| Continuous Drain Current (ID) |
4.5A |
| JEDEC-95 Code |
TO-220AB |
| Pulsed Drain Current-Max (IDM) |
18A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
85 mJ |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
STMicroelectronics STP6NK90ZFP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Pin Count |
3 |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
AVALANCHE RATED, HIGH VOLTAGE |
| Base Part Number |
STP6N |
| Turn Off Delay Time |
20 ns |
| Element Configuration |
Single |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
5.8A |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2 Ω @ 2.9A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60.5nC @ 10V |
| Rise Time |
45ns |
| Vgs (Max) |
±30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
30W |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
2Ohm |
| Drain to Source Breakdown Voltage |
900V |
| Height |
9.3mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP70N10F4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STP70N |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
65A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
65 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
150W Tc |
| Packaging |
Tube |
| Series |
DeepGATE™, STripFET™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
19.5mOhm |
| Mount |
Through Hole |
| Contact Plating |
Tin |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
150W |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
19.5m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
85nC @ 10V |
| Element Configuration |
Single |
| Pin Count |
3 |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
65A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
260A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
STMicroelectronics STP75NF68
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
190W Tc |
| Turn Off Delay Time |
90 ns |
| Base Part Number |
STP75N |
| Mount |
Through Hole |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~175°C TJ |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Rise Time |
60ns |
| Power Dissipation |
190W |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
14m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2550pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
75 ns |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
68V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |