Showing 13213–13224 of 15245 results
STMicroelectronics STP76NF75
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
66 ns |
| JESD-30 Code |
R-PSFM-T3 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Base Part Number |
STP76N |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Rise Time |
100ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
75V |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
300W |
| Lead Free |
Lead Free |
STMicroelectronics STP7NK30Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
SuperMESH™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
300V |
| Current Rating |
5A |
| Base Part Number |
STP7N |
| Pin Count |
3 |
| Packaging |
Tube |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-220AB |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Rise Time |
25ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
5A |
| Power Dissipation |
50W |
| Turn On Delay Time |
11 ns |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain-source On Resistance-Max |
0.9Ohm |
| Drain to Source Breakdown Voltage |
300V |
| Pulsed Drain Current-Max (IDM) |
20A |
| Height |
9.15mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP7NK80Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
45 ns |
| Packaging |
Tube |
| Series |
SuperMESH™ |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
800V |
| Current Rating |
5.2A |
| Base Part Number |
STP7N |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
5.2A |
| Threshold Voltage |
3.75V |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.8 Ω @ 2.6A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1138pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Rise Time |
12ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
20 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
20.8A |
| Height |
9.15mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
125W |
| Lead Free |
Lead Free |
STMicroelectronics STP7NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MDmesh™ II |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
26 ns |
| Operating Temperature |
150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
900mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Base Part Number |
STP7N |
| Pin Count |
3 |
| Element Configuration |
Single |
| Packaging |
Tube |
| Power Dissipation |
45W |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
363pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Rise Time |
10ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
5A |
| Threshold Voltage |
3V |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
20A |
| Avalanche Energy Rating (Eas) |
119 mJ |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP7NM80
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Power Dissipation |
90W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Turn Off Delay Time |
35 ns |
| Packaging |
Tube |
| Series |
MDmesh™ |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1.05Ohm |
| Base Part Number |
STP7N |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Contact Plating |
Tin |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.05 Ω @ 3.25A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
620pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Rise Time |
8ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
3.25A |
| Threshold Voltage |
4V |
| Turn On Delay Time |
20 ns |
| Case Connection |
ISOLATED |
| Drain Current-Max (Abs) (ID) |
6.5A |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
26A |
| Avalanche Energy Rating (Eas) |
240 mJ |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
STMicroelectronics STP80N20M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
61A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Turn Off Delay Time |
131 ns |
| Base Part Number |
STP80N |
| Mount |
Through Hole |
| Series |
MDmesh™ V |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
23MOhm |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
150°C TJ |
| Pin Count |
3 |
| Rise Time |
31ns |
| Vgs (Max) |
±25V |
| Current |
61A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
190W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 30.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4329pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
104nC @ 10V |
| Voltage |
200V |
| Element Configuration |
Single |
| Fall Time (Typ) |
176 ns |
| Continuous Drain Current (ID) |
61A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
200V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP80N6F6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Number of Channels |
1 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
120W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
5mOhm |
| Base Part Number |
STP80N |
| Mount |
Through Hole |
| FET Type |
N-Channel |
| Element Configuration |
Single |
| Rds On (Max) @ Id, Vgs |
5.8m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7480pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
122nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
110A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP80NF10
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
453.59237kg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Resistance |
15mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
100V |
| Current Rating |
80A |
| Base Part Number |
STP80N |
| Pin Count |
3 |
| Number of Elements |
1 |
| Power Dissipation-Max |
300W Tc |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Turn-Off Delay Time |
116 ns |
| Continuous Drain Current (ID) |
80A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5500pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
80A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
182nC @ 10V |
| Rise Time |
80ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
60 ns |
| Turn On Delay Time |
26 ns |
| Power Dissipation |
300W |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Height |
9.15mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
STMicroelectronics STP80NF55-06
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
9.071847g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Base Part Number |
STP80N |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
6.5mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
55V |
| Current Rating |
80A |
| Turn Off Delay Time |
125 ns |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
65 ns |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
27 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
189nC @ 10V |
| Rise Time |
155ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
80A |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Height |
9.15mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP8NS25
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STP8N |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
80W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Series |
MESH OVERLAY™ |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
250V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Current Rating |
8A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
18ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
80W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
450m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
770pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
51.8nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Pin Count |
3 |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
8A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
8A |
| Drain-source On Resistance-Max |
0.45Ohm |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
32A |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
STMicroelectronics STP90N6F6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Weight |
329.988449mg |
| Current - Continuous Drain (Id) @ 25℃ |
84A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Turn Off Delay Time |
73 ns |
| Operating Temperature |
175°C TJ |
| Power Dissipation (Max) |
136W Tc |
| Packaging |
Tube |
| Series |
DeepGATE™, STripFET™ VI |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Contact Plating |
Tin |
| Rise Time |
42ns |
| Drain to Source Voltage (Vdss) |
60V |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.8m Ω @ 38.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4295pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
74.9nC @ 10V |
| Number of Channels |
1 |
| Base Part Number |
STP90N |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
84A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
90A |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |