Showing 13225–13236 of 15245 results
STMicroelectronics STP95N04
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Pin Count |
3 |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
40V |
| Current Rating |
80A |
| Base Part Number |
STP95 |
| Packaging |
Tube |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
50ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
110W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
54nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
80A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0065Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP9NK60Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
43 ns |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
600V |
| Current Rating |
7A |
| Base Part Number |
STP9N |
| Pin Count |
3 |
| Operating Temperature |
-55°C~150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-220AB |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
950m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1110pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
53nC @ 10V |
| Rise Time |
17ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
3.5A |
| Power Dissipation |
125W |
| Turn On Delay Time |
19 ns |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
7A |
| Drain-source On Resistance-Max |
0.95Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
28A |
| Height |
9.15mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP9NK70Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
115W Tc |
| Turn Off Delay Time |
45 ns |
| Pin Count |
3 |
| Mount |
Through Hole |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
700V |
| Current Rating |
7.5A |
| Base Part Number |
STP9N |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
4A |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1370pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
| Rise Time |
17ns |
| Vgs (Max) |
±30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
115W |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
700V |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STP9NM40N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STP9N |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
5.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
60W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ II |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Turn On Delay Time |
7 ns |
| Element Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
790m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
365pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Rise Time |
4.4ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
8.8 ns |
| Continuous Drain Current (ID) |
5.6A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
400V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STP9NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MDmesh™ II |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
52.5 ns |
| Operating Temperature |
150°C TJ |
| Power Dissipation |
70W |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Base Part Number |
STP9N |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Packaging |
Tube |
| Turn On Delay Time |
28 ns |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Rds On (Max) @ Id, Vgs |
745m Ω @ 3.25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
452pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
17.4nC @ 10V |
| Rise Time |
23ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
26.7 ns |
| Continuous Drain Current (ID) |
6.5A |
| Threshold Voltage |
3V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain-source On Resistance-Max |
0.745Ohm |
| Pulsed Drain Current-Max (IDM) |
26A |
| DS Breakdown Voltage-Min |
600V |
| Height |
15.75mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STQ1NC45R-AP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
500mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Tc |
| Operating Temperature |
-65°C~150°C TJ |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Box (TB) |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Vgs(th) (Max) @ Id |
3.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 25V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5 Ω @ 500mA, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
7nC @ 10V |
| Drain to Source Voltage (Vdss) |
450V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
500mA |
| Drain Current-Max (Abs) (ID) |
0.5A |
| Pulsed Drain Current-Max (IDM) |
2A |
| DS Breakdown Voltage-Min |
450V |
| Avalanche Energy Rating (Eas) |
25 mJ |
| Base Part Number |
STQ1 |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STQ2LN60K3-AP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STQ2 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
600mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
2.5W Tc |
| Turn Off Delay Time |
23.5 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Cut Tape (CT) |
| Series |
SuperMESH3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Factory Lead Time |
9 Weeks |
| Turn On Delay Time |
10 ns |
| Power Dissipation |
2.5W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.5 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
235pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Rise Time |
8.5ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
600mA |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STQ2NK60ZR-AP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
SuperMESH™ |
| Mounting Type |
Through Hole |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
400mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tape & Box (TB) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
170pF @ 25V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8 Ω @ 700mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Base Part Number |
STQ2 |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
400mA |
| Drain Current-Max (Abs) (ID) |
0.4A |
| Drain-source On Resistance-Max |
8Ohm |
| Pulsed Drain Current-Max (IDM) |
1.6A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
90 mJ |
| JESD-30 Code |
O-PBCY-T3 |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STS10P4LLF6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Power Dissipation (Max) |
2.7W Ta |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Series |
STripFET™ F6 |
| Packaging |
Cut Tape (CT) |
| Operating Temperature |
150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
170 ns |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Current - Continuous Drain (Id) @ 25℃ |
10A Ta |
| Number of Pins |
8 |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Factory Lead Time |
20 Weeks |
| Base Part Number |
STS10 |
| Drain to Source Voltage (Vdss) |
40V |
| Width |
4mm |
| Length |
5mm |
| Height |
1.5mm |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
10A |
| Vgs (Max) |
±20V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
3525pF @ 25V |
| Vgs(th) (Max) @ Id |
1V @ 250μA (Min) |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 3A, 10V |
| FET Type |
P-Channel |
| Turn On Delay Time |
49.4 ns |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STS12N3LLH5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Cut Tape (CT) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.7W Tc |
| Turn Off Delay Time |
32.4 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Series |
STripFET™ V |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
STS12 |
| Gate Charge (Qg) (Max) @ Vgs |
8nC @ 4.5V |
| Rise Time |
11.2ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.7W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.5m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1290pF @ 25V |
| Pin Count |
8 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
+22V, -20V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
22V |
| Drain-source On Resistance-Max |
0.0097Ohm |
| DS Breakdown Voltage-Min |
30V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STS19N3LLH6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.7W Ta |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Series |
DeepGATE™, STripFET™ VI |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
37 ns |
| Base Part Number |
STS19 |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
30V |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
9.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.6m Ω @ 9.5A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1690pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 15V |
| Pin Count |
8 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
19A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0075Ohm |
| Pulsed Drain Current-Max (IDM) |
76A |
| DS Breakdown Voltage-Min |
30V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STS1NK60Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
250mA Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Tc |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
8 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
SuperMESH™ |
| JESD-609 Code |
e4 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
13 ns |
| Current Rating |
250mA |
| Input Capacitance (Ciss) (Max) @ Vds |
94pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
6.9nC @ 10V |
| Pin Count |
8 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Turn On Delay Time |
5.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15 Ω @ 400mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STS1 |
| Rise Time |
5ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
28 ns |
| Continuous Drain Current (ID) |
250mA |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
0.25A |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
1A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |