Showing 13237–13248 of 15245 results
STMicroelectronics STS26N3LLH6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STS26 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.7W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Turn Off Delay Time |
75 ns |
| Series |
DeepGATE™, STripFET™ VI |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
4.4mOhm |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
20 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
46 ns |
| Power Dissipation |
2.7W |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.4m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4040pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 4.5V |
| Rise Time |
18ns |
| Element Configuration |
Single |
| Pin Count |
8 |
| Continuous Drain Current (ID) |
26A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Avalanche Energy Rating (Eas) |
525 mJ |
| Nominal Vgs |
1 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
STMicroelectronics STS2DPFS20V
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Cut Tape (CT) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.7V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Tc |
| Turn Off Delay Time |
45 ns |
| Current Rating |
-2.5A |
| Mount |
Surface Mount |
| Series |
STripFET™ II |
| JESD-609 Code |
e4 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
-20V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Gate Charge (Qg) (Max) @ Vgs |
4.7nC @ 4.5V |
| Rise Time |
30ns |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id |
600mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
315pF @ 15V |
| Base Part Number |
STS2D |
| Pin Count |
8 |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
2.5A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
2A |
| Drain-source On Resistance-Max |
0.25Ohm |
| Drain to Source Breakdown Voltage |
-20V |
| Pulsed Drain Current-Max (IDM) |
10A |
| FET Feature |
Schottky Diode (Isolated) |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STS4NF100
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ II |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Turn Off Delay Time |
49 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
100V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
4A |
| Packaging |
Tape & Reel (TR) |
| Base Part Number |
STS4N |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
17 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
58 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Rise Time |
45ns |
| Pin Count |
8 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
4A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
4A |
| Drain-source On Resistance-Max |
0.07Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Height |
1.25mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STS5N15F3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Tc |
| Turn Off Delay Time |
46 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Series |
STripFET™ III |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
57MOhm |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Rise Time |
13ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
57m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Base Part Number |
STS5N |
| Pin Count |
8 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
5A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain to Source Breakdown Voltage |
150V |
| Pulsed Drain Current-Max (IDM) |
20A |
| Avalanche Energy Rating (Eas) |
300 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STS9NF30L
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Tc |
| Turn Off Delay Time |
38 ns |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ II |
| Operating Temperature |
150°C TJ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
30V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
730pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
12.5nC @ 4.5V |
| Pin Count |
8 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
20m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Current Rating |
9A |
| Rise Time |
80ns |
| Vgs (Max) |
±18V |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
9A |
| Gate to Source Voltage (Vgs) |
18V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain-source On Resistance-Max |
0.035Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
36A |
| Base Part Number |
STS9NF |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STT4P3LLH6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 |
| Current - Continuous Drain (Id) @ 25℃ |
4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1.6W Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Cut Tape (CT) |
| Series |
DeepGATE™, STripFET™ H6 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
20 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Finish |
Matte Tin (Sn) |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STT4P |
| Configuration |
Single |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
56m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
639pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
6nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
4A |
| Drain Current-Max (Abs) (ID) |
4A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STU10N60M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
85W Tc |
| Element Configuration |
Single |
| Turn Off Delay Time |
32.5 ns |
| Packaging |
Tube |
| Series |
MDmesh™ II Plus |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STU10N |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Factory Lead Time |
26 Weeks |
| Vgs (Max) |
±25V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
13.5nC @ 10V |
| Rise Time |
8ns |
| Fall Time (Typ) |
13.2 ns |
| Continuous Drain Current (ID) |
7.5A |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.6Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Height |
6.2mm |
| Length |
6.6mm |
| Width |
2.4mm |
| Radiation Hardening |
No |
| Turn On Delay Time |
8.8 ns |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STU4N62K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
29 ns |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
SuperMESH3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STU4N |
| Pin Count |
3 |
| Power Dissipation (Max) |
70W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
19 ns |
| Continuous Drain Current (ID) |
3.8A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2 Ω @ 1.9A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
550pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
| Rise Time |
9ns |
| Vgs (Max) |
±30V |
| Power Dissipation |
70W |
| Turn On Delay Time |
10 ns |
| Threshold Voltage |
3.75V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
620V |
| Height |
6.9mm |
| Length |
6.6mm |
| Width |
2.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STU5N52K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
29 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
70W Tc |
| Packaging |
Tube |
| Series |
SuperMESH3™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STU5N |
| Pin Count |
3 |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
4.4A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
545pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Rise Time |
11ns |
| Vgs (Max) |
±30V |
| Power Dissipation |
70W |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
525V |
| Height |
6.9mm |
| Length |
6.6mm |
| Width |
2.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
9 ns |
| Lead Free |
Lead Free |
STMicroelectronics STU5N62K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
SuperMESH3™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Factory Lead Time |
12 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1.6Ohm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
ULTRA LOW-ON RESISTANCE |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
STU5N |
| Packaging |
Tube |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
4.2A |
| Threshold Voltage |
3.75V |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6 Ω @ 2.1A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
680pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Rise Time |
8ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
21 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
70W |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
620V |
| Pulsed Drain Current-Max (IDM) |
16.8A |
| Avalanche Energy Rating (Eas) |
120 mJ |
| Height |
6.9mm |
| Length |
6.6mm |
| Width |
2.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STU65N3LLH5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
65A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Turn Off Delay Time |
32.4 ns |
| Reach Compliance Code |
unknown |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
STripFET™ V |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Base Part Number |
STU65N |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
50W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.3m Ω @ 32.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1290pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
8nC @ 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
11.2ns |
| Vgs (Max) |
±22V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
65A |
| Drain-source On Resistance-Max |
0.0097Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
260A |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STU6N95K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
17 Weeks |
| Packaging |
Tube |
| Series |
SuperMESH5™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Turn Off Delay Time |
33 ns |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Rise Time |
12ns |
| Configuration |
Single |
| Power Dissipation |
90W |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.25 Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
450pF @ 100V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STU6N |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
9A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain to Source Breakdown Voltage |
950V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |