Showing 13249–13260 of 15245 results
STMicroelectronics STU75N3LLH6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
DeepGATE™, STripFET™ VI |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
60W Tc |
| Turn Off Delay Time |
37 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Pin Count |
3 |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
STU75N |
| Packaging |
Tube |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Turn On Delay Time |
9.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.9m Ω @ 37.5A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2030pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
23.8nC @ 4.5V |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
30V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
75A |
| Threshold Voltage |
1.7V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0084Ohm |
| Height |
6.9mm |
| Length |
6.6mm |
| Width |
2.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STU7N65M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
30 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Resistance |
980mOhm |
| Factory Lead Time |
26 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
60W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rise Time |
20ns |
| Vgs (Max) |
±25V |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.15 Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
270pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
9nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STU7N |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
5A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STU7NF25
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STU7N |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
72W Tc |
| Turn Off Delay Time |
26 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
STripFET™ II |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Factory Lead Time |
12 Weeks |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
420m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
8A |
| Gate to Source Voltage (Vgs) |
20V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STU85N3LH5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ V |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
23.6 ns |
| Operating Temperature |
175°C TJ |
| Element Configuration |
Single |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Base Part Number |
STU85 |
| Pin Count |
3 |
| Packaging |
Tube |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
10.8 ns |
| Continuous Drain Current (ID) |
40A |
| Turn On Delay Time |
6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.4m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1850pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 5V |
| Rise Time |
14ns |
| Vgs (Max) |
±22V |
| Power Dissipation |
70W |
| Case Connection |
DRAIN |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
22V |
| Drain Current-Max (Abs) (ID) |
80A |
| Drain to Source Breakdown Voltage |
30V |
| Height |
6.9mm |
| Length |
6.6mm |
| Width |
2.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STV300NH02L
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
PowerSO-10 Exposed Bottom Pad |
| Number of Pins |
10 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V 5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
138 ns |
| Base Part Number |
STV300 |
| Factory Lead Time |
12 Weeks |
| Series |
STripFET™ III |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
10 |
| ECCN Code |
EAR99 |
| Resistance |
1MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
250 |
| Operating Temperature |
-55°C~175°C TJ |
| Pin Count |
10 |
| Fall Time (Typ) |
94.4 ns |
| Continuous Drain Current (ID) |
200A |
| Power Dissipation |
300W |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7055pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
109nC @ 10V |
| Rise Time |
275ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
1.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
280A |
| Drain to Source Breakdown Voltage |
24V |
| Avalanche Energy Rating (Eas) |
2296 mJ |
| Height |
3.75mm |
| Length |
9.6mm |
| Width |
9.5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STW11NB80
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
800V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Current Rating |
11A |
| Series |
PowerMESH™ |
| Base Part Number |
STW11N |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Rise Time |
13ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
190W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 25V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
23 ns |
| Continuous Drain Current (ID) |
11A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.8Ohm |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
44A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
STMicroelectronics STW120NF10
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ II |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
312W Tc |
| Turn Off Delay Time |
132 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Pin Count |
3 |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
10.5mOhm |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
100V |
| Current Rating |
120A |
| Base Part Number |
STW120 |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
68 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10.5m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
233nC @ 10V |
| Rise Time |
90ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
110A |
| Threshold Voltage |
4V |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
440A |
| Avalanche Energy Rating (Eas) |
550 mJ |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
312W |
| Lead Free |
Lead Free |
STMicroelectronics STW12N150K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
250W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ K5 |
| Part Status |
Active |
| Factory Lead Time |
17 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STW12N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.9 Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1360pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
| Drain to Source Voltage (Vdss) |
1500V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
7A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STW12NK80Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Turn Off Delay Time |
70 ns |
| Pin Count |
3 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
750mOhm |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
800V |
| Current Rating |
10.5A |
| Base Part Number |
STW12N |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
10.5A |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 5.25A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2620pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
87nC @ 10V |
| Rise Time |
18ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
20 ns |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-247AC |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
42A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
190W |
| Lead Free |
Lead Free |
STMicroelectronics STW13NB60
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Current Rating |
13A |
| Mount |
Through Hole |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Series |
PowerMESH™ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
82nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
190W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
540m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Base Part Number |
STW13N |
| Pin Count |
3 |
| Rise Time |
13ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.54Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
52A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
STMicroelectronics STW14NM65N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
55 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
380mOhm |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Operating Temperature |
150°C TJ |
| Base Part Number |
STW14N |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
125W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
13ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
48A |
| Avalanche Energy Rating (Eas) |
300 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STW15NK90Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Number of Terminations |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Operating Mode |
ENHANCEMENT MODE |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
400mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
AVALANCHE RATED, HIGH VOLTAGE |
| Voltage - Rated DC |
1kV |
| Current Rating |
13A |
| Base Part Number |
STW15N |
| Pin Count |
3 |
| Number of Elements |
1 |
| Power Dissipation-Max |
350W Tc |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Turn-Off Delay Time |
135 ns |
| Turn On Delay Time |
42 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
550m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6100pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
15A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
256nC @ 10V |
| Rise Time |
27ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
7.5A |
| Threshold Voltage |
3.75V |
| Power Dissipation |
350W |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
900V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |