Showing 13261–13272 of 15245 results
STMicroelectronics STW16N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Turn Off Delay Time |
6 ns |
| Base Part Number |
STW16N |
| Mount |
Through Hole |
| Series |
MDmesh™ V |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
279MOhm |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Operating Temperature |
150°C TJ |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Rise Time |
7ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
90W |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
279m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1250pF @ 100V |
| JESD-30 Code |
R-PSFM-T3 |
| Element Configuration |
Single |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
48A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STW16NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
60 ns |
| Pin Count |
3 |
| Mount |
Through Hole |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3/e1 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN/TIN SILVER COPPER |
| Base Part Number |
STW16N |
| Operating Temperature |
150°C TJ |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
15ns |
| Vgs (Max) |
±25V |
| Power Dissipation |
125W |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
260m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.26Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Avalanche Energy Rating (Eas) |
470 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STW18N60DM2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
90W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ DM2 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STW18N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
295m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
3V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STW18N60M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Base Part Number |
STW18N |
| Power Dissipation (Max) |
110W Tc |
| Packaging |
Tube |
| Series |
MDmesh™ II Plus |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
21.5nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
791pF @ 100V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| JESD-30 Code |
R-PSFM-T3 |
| Continuous Drain Current (ID) |
13A |
| Drain-source On Resistance-Max |
0.28Ohm |
| Pulsed Drain Current-Max (IDM) |
52A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
135 mJ |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
STMicroelectronics STW18NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
55 ns |
| Pin Count |
3 |
| Factory Lead Time |
16 Weeks |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
285mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Position |
SINGLE |
| Base Part Number |
STW18N |
| Operating Temperature |
-55°C~150°C TJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
13A |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
285m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
80W |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
25V |
| Pulsed Drain Current-Max (IDM) |
52A |
| DS Breakdown Voltage-Min |
600V |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STW18NM60ND
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Case Connection |
DRAIN |
| Mount |
Through Hole |
| Packaging |
Tube |
| Series |
FDmesh™ II |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STW18N |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn Off Delay Time |
13 ns |
| Turn On Delay Time |
55 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
25V |
| Rds On (Max) @ Id, Vgs |
290m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1030pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Rise Time |
15.5ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain-source On Resistance-Max |
0.29Ohm |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
52A |
| Avalanche Energy Rating (Eas) |
187 mJ |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STW18NM80
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Turn Off Delay Time |
96 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
150°C TJ |
| Series |
MDmesh™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Base Part Number |
STW18N |
| Pin Count |
3 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Threshold Voltage |
4V |
| Turn On Delay Time |
18 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
295m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2070pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Rise Time |
28ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
50 ns |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.295Ohm |
| Power Dissipation |
190W |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Avalanche Energy Rating (Eas) |
600 mJ |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
STMicroelectronics STW19NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
61 ns |
| Element Configuration |
Dual |
| Operating Temperature |
150°C TJ |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
250mOhm |
| Terminal Position |
SINGLE |
| Base Part Number |
STW19N |
| Pin Count |
3 |
| Mount |
Through Hole |
| Contact Plating |
Tin |
| Continuous Drain Current (ID) |
14A |
| Power Dissipation |
110W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Rise Time |
16ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
17 ns |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
25V |
| Operating Mode |
ENHANCEMENT MODE |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
56A |
| Avalanche Energy Rating (Eas) |
208 mJ |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
12 ns |
| Lead Free |
Lead Free |
STMicroelectronics STW19NM65N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
80 ns |
| Pin Count |
3 |
| Mount |
Through Hole |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
270mOhm |
| Terminal Finish |
Tin (Sn) |
| Base Part Number |
STW19N |
| Operating Temperature |
150°C TJ |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
8ns |
| Vgs (Max) |
±25V |
| Power Dissipation |
150W |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
270m Ω @ 7.75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
55nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
26 ns |
| Continuous Drain Current (ID) |
15.5A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
62A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STW20N60M2-EP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
MDmesh™ M2-EP |
| Part Status |
Active |
| Factory Lead Time |
14 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Base Part Number |
STW20N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
278m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
787pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
21.7nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STW20N90K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
250W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ K5 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STW20N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Drain to Source Voltage (Vdss) |
900V |
| Vgs (Max) |
±30V |
| RoHS Status |
RoHS Compliant |
STMicroelectronics STW20NK50Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
9.071847g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Turn Off Delay Time |
70 ns |
| Pin Count |
3 |
| Operating Temperature |
150°C TJ |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
270mOhm |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
500V |
| Current Rating |
17A |
| Base Part Number |
STW20N |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
17A |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
28 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
270m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
119nC @ 10V |
| Rise Time |
20ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-247AC |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Avalanche Energy Rating (Eas) |
850 mJ |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
190W |
| Lead Free |
Lead Free |