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Discrete Semiconductors
STMicroelectronics STW20NM60FD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
FDmesh™ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
214W Tc |
Operating Temperature |
-65°C~150°C TJ |
Element Configuration |
Single |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
290mOhm |
Voltage - Rated DC |
600V |
Current Rating |
20A |
Base Part Number |
STW20N |
Pin Count |
3 |
Number of Channels |
1 |
Contact Plating |
Tin |
Factory Lead Time |
16 Weeks |
Threshold Voltage |
3V |
Power Dissipation |
214W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
290m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
Rise Time |
12ns |
Vgs (Max) |
±30V |
Fall Time (Typ) |
22 ns |
Continuous Drain Current (ID) |
20A |
JEDEC-95 Code |
TO-247AC |
Gate to Source Voltage (Vgs) |
30V |
Operating Mode |
ENHANCEMENT MODE |
Drain to Source Breakdown Voltage |
600V |
Pulsed Drain Current-Max (IDM) |
80A |
Avalanche Energy Rating (Eas) |
700 mJ |
Max Junction Temperature (Tj) |
150°C |
Height |
24.45mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
25 ns |
Lead Free |
Lead Free |
STMicroelectronics STW23NM50N
In stock
Manufacturer |
STMicroelectronics |
---|---|
Configuration |
SINGLE WITH BUILT-IN DIODE |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
125W Tc |
Turn Off Delay Time |
71 ns |
Packaging |
Tube |
Series |
MDmesh™ II |
Operating Temperature |
150°C TJ |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
190mOhm |
Terminal Finish |
Tin (Sn) |
Terminal Position |
SINGLE |
Base Part Number |
STW23N |
Pin Count |
3 |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Continuous Drain Current (ID) |
17A |
Threshold Voltage |
3V |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
190m Ω @ 8.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1330pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
Rise Time |
19ns |
Drain to Source Voltage (Vdss) |
500V |
Vgs (Max) |
±25V |
Fall Time (Typ) |
29 ns |
Power Dissipation |
125W |
Operating Mode |
ENHANCEMENT MODE |
Gate to Source Voltage (Vgs) |
25V |
Pulsed Drain Current-Max (IDM) |
68A |
DS Breakdown Voltage-Min |
500V |
Avalanche Energy Rating (Eas) |
254 mJ |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
6.6 ns |
Lead Free |
Lead Free |
STMicroelectronics STW23NM60N
In stock
Manufacturer |
STMicroelectronics |
---|---|
Operating Temperature |
150°C TJ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
19A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
150W Tc |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Packaging |
Tube |
Series |
MDmesh™ II |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
TIN |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Turn Off Delay Time |
90 ns |
Base Part Number |
STW23N |
Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
Rise Time |
15ns |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
150W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
180m Ω @ 9.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2050pF @ 50V |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Vgs (Max) |
±25V |
Fall Time (Typ) |
36 ns |
Continuous Drain Current (ID) |
9.5A |
Gate to Source Voltage (Vgs) |
25V |
Drain Current-Max (Abs) (ID) |
19A |
Drain-source On Resistance-Max |
0.18Ohm |
Drain to Source Breakdown Voltage |
600V |
Pulsed Drain Current-Max (IDM) |
76A |
Avalanche Energy Rating (Eas) |
700 mJ |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STW24N60DM2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Power Dissipation (Max) |
150W Tc |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
17 Weeks |
Turn Off Delay Time |
60 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
FDmesh™ II Plus |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Number of Elements |
1 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
Rise Time |
8.7ns |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
15 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
200m Ω @ 9A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1055pF @ 100V |
Base Part Number |
STW24N |
Number of Channels |
1 |
Vgs (Max) |
±25V |
Fall Time (Typ) |
15 ns |
Continuous Drain Current (ID) |
18A |
Gate to Source Voltage (Vgs) |
25V |
Drain-source On Resistance-Max |
0.2Ohm |
Drain to Source Breakdown Voltage |
600V |
Pulsed Drain Current-Max (IDM) |
72A |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STW25N60M2-EP
In stock
Manufacturer |
STMicroelectronics |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
150W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ M2-EP |
Part Status |
Active |
Factory Lead Time |
16 Weeks |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
ECCN Code |
EAR99 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STW25N |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
188m Ω @ 9A, 10V |
Vgs(th) (Max) @ Id |
4.75V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1090pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
Drain to Source Voltage (Vdss) |
600V |
Vgs (Max) |
±25V |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STW28N60M2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Power Dissipation (Max) |
170W Tc |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Channels |
1 |
Number of Elements |
1 |
Turn Off Delay Time |
100 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ II Plus |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Base Part Number |
STW28N |
Contact Plating |
Tin |
Factory Lead Time |
16 Weeks |
Vgs (Max) |
±25V |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
14.5 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
150m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1370pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
Rise Time |
7.2ns |
Fall Time (Typ) |
8 ns |
Continuous Drain Current (ID) |
24A |
Element Configuration |
Single |
Gate to Source Voltage (Vgs) |
25V |
Drain Current-Max (Abs) (ID) |
22A |
Drain to Source Breakdown Voltage |
600V |
Pulsed Drain Current-Max (IDM) |
88A |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
RoHS Status |
ROHS3 Compliant |
Power Dissipation |
170W |
Lead Free |
Lead Free |
STMicroelectronics STW29NK50Z
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
SuperMESH™ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
31A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
350W Tc |
Turn Off Delay Time |
129 ns |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
500V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Current Rating |
31A |
Packaging |
Tube |
Base Part Number |
STW29N |
Rise Time |
41ns |
Vgs (Max) |
±30V |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
350W |
Turn On Delay Time |
44.5 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
130m Ω @ 15.5A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds |
6110pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
266nC @ 10V |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Fall Time (Typ) |
33 ns |
Continuous Drain Current (ID) |
31A |
JEDEC-95 Code |
TO-247AC |
Gate to Source Voltage (Vgs) |
30V |
Drain to Source Breakdown Voltage |
500V |
Avalanche Energy Rating (Eas) |
550 mJ |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STW30N80K5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
250W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ K5 |
Part Status |
Active |
Factory Lead Time |
17 Weeks |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
ECCN Code |
EAR99 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STW30N |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
180m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id |
5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
1530pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
Drain to Source Voltage (Vdss) |
800V |
Vgs (Max) |
±30V |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STW30NM60N
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
190W Tc |
Turn Off Delay Time |
125 ns |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Series |
MDmesh™ II |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Resistance |
130mOhm |
Terminal Finish |
TIN |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Operating Temperature |
150°C TJ |
Base Part Number |
STW30N |
Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs |
91nC @ 10V |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
190W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
130m Ω @ 12.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Rise Time |
24ns |
Vgs (Max) |
±30V |
Fall Time (Typ) |
70 ns |
Continuous Drain Current (ID) |
25A |
JEDEC-95 Code |
TO-247AC |
Gate to Source Voltage (Vgs) |
30V |
Drain to Source Breakdown Voltage |
600V |
Avalanche Energy Rating (Eas) |
900 mJ |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STW30NM60ND
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
190W Tc |
Turn Off Delay Time |
110 ns |
JESD-30 Code |
R-PSFM-T3 |
Operating Temperature |
150°C TJ |
Series |
FDmesh™ II |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
130mOhm |
Base Part Number |
STW30N |
Pin Count |
3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 50V |
Voltage |
600V |
Current |
34A |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
190W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
130m Ω @ 12.5A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
Rise Time |
50ns |
Qualification Status |
Not Qualified |
Vgs (Max) |
±25V |
Fall Time (Typ) |
75 ns |
Continuous Drain Current (ID) |
25A |
Gate to Source Voltage (Vgs) |
25V |
Drain to Source Breakdown Voltage |
600V |
Avalanche Energy Rating (Eas) |
900 mJ |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
STMicroelectronics STW33N60M2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Base Part Number |
STW33N |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Turn Off Delay Time |
109 ns |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation (Max) |
190W Tc |
Packaging |
Tube |
Series |
MDmesh™ II Plus |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Drain to Source Voltage (Vdss) |
600V |
Vgs (Max) |
±25V |
Turn On Delay Time |
16 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
125m Ω @ 13A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1781pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
45.5nC @ 10V |
Rise Time |
9.6ns |
Element Configuration |
Single |
Number of Channels |
1 |
Fall Time (Typ) |
9 ns |
Continuous Drain Current (ID) |
26A |
Gate to Source Voltage (Vgs) |
25V |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
RoHS Status |
ROHS3 Compliant |
Power Dissipation |
190W |
Lead Free |
Lead Free |
STMicroelectronics STW34NB20
In stock
Manufacturer |
STMicroelectronics |
---|---|
JESD-609 Code |
e3 |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
45.359237mg |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
34A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
180W Tc |
Operating Temperature |
150°C TJ |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Series |
PowerMESH™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
75mOhm |
Terminal Finish |
Tin (Sn) |
Additional Feature |
AVALANCHE RATED |
Voltage - Rated DC |
200V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Current Rating |
34A |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Rise Time |
40ns |
Pin Count |
3 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
180W |
Turn On Delay Time |
30 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
75m Ω @ 17A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
3300pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
18 ns |
Base Part Number |
STW34N |
Continuous Drain Current (ID) |
34A |
JEDEC-95 Code |
TO-247AC |
Gate to Source Voltage (Vgs) |
30V |
Drain to Source Breakdown Voltage |
200V |
Avalanche Energy Rating (Eas) |
650 mJ |
Turn On Time-Max (ton) |
95ns |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
RoHS Status |
ROHS3 Compliant |
Qualification Status |
Not Qualified |
Lead Free |
Lead Free |