Showing 13273–13284 of 15245 results

Discrete Semiconductors

STMicroelectronics STW20NM60FD

In stock

SKU: STW20NM60FD-11
Manufacturer

STMicroelectronics

Series

FDmesh™

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

20A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

214W Tc

Operating Temperature

-65°C~150°C TJ

Element Configuration

Single

Packaging

Tube

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

290mOhm

Voltage - Rated DC

600V

Current Rating

20A

Base Part Number

STW20N

Pin Count

3

Number of Channels

1

Contact Plating

Tin

Factory Lead Time

16 Weeks

Threshold Voltage

3V

Power Dissipation

214W

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

290m Ω @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Rise Time

12ns

Vgs (Max)

±30V

Fall Time (Typ)

22 ns

Continuous Drain Current (ID)

20A

JEDEC-95 Code

TO-247AC

Gate to Source Voltage (Vgs)

30V

Operating Mode

ENHANCEMENT MODE

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

80A

Avalanche Energy Rating (Eas)

700 mJ

Max Junction Temperature (Tj)

150°C

Height

24.45mm

Length

15.75mm

Width

5.15mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

25 ns

Lead Free

Lead Free

STMicroelectronics STW23NM50N

In stock

SKU: STW23NM50N-11
Manufacturer

STMicroelectronics

Configuration

SINGLE WITH BUILT-IN DIODE

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

17A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

125W Tc

Turn Off Delay Time

71 ns

Packaging

Tube

Series

MDmesh™ II

Operating Temperature

150°C TJ

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

190mOhm

Terminal Finish

Tin (Sn)

Terminal Position

SINGLE

Base Part Number

STW23N

Pin Count

3

Mount

Through Hole

Factory Lead Time

16 Weeks

Continuous Drain Current (ID)

17A

Threshold Voltage

3V

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

190m Ω @ 8.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1330pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Rise Time

19ns

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±25V

Fall Time (Typ)

29 ns

Power Dissipation

125W

Operating Mode

ENHANCEMENT MODE

Gate to Source Voltage (Vgs)

25V

Pulsed Drain Current-Max (IDM)

68A

DS Breakdown Voltage-Min

500V

Avalanche Energy Rating (Eas)

254 mJ

Height

20.15mm

Length

15.75mm

Width

5.15mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

6.6 ns

Lead Free

Lead Free

STMicroelectronics STW23NM60N

In stock

SKU: STW23NM60N-11
Manufacturer

STMicroelectronics

Operating Temperature

150°C TJ

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

19A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

150W Tc

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Packaging

Tube

Series

MDmesh™ II

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

TIN

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Turn Off Delay Time

90 ns

Base Part Number

STW23N

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Rise Time

15ns

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

150W

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

180m Ω @ 9.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 50V

Pin Count

3

Qualification Status

Not Qualified

Vgs (Max)

±25V

Fall Time (Typ)

36 ns

Continuous Drain Current (ID)

9.5A

Gate to Source Voltage (Vgs)

25V

Drain Current-Max (Abs) (ID)

19A

Drain-source On Resistance-Max

0.18Ohm

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

76A

Avalanche Energy Rating (Eas)

700 mJ

RoHS Status

ROHS3 Compliant

STMicroelectronics STW24N60DM2

In stock

SKU: STW24N60DM2-11
Manufacturer

STMicroelectronics

Power Dissipation (Max)

150W Tc

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

18A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

17 Weeks

Turn Off Delay Time

60 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

FDmesh™ II Plus

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Number of Elements

1

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Rise Time

8.7ns

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

15 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

200m Ω @ 9A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1055pF @ 100V

Base Part Number

STW24N

Number of Channels

1

Vgs (Max)

±25V

Fall Time (Typ)

15 ns

Continuous Drain Current (ID)

18A

Gate to Source Voltage (Vgs)

25V

Drain-source On Resistance-Max

0.2Ohm

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

72A

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

STMicroelectronics STW25N60M2-EP

In stock

SKU: STW25N60M2-EP-11
Manufacturer

STMicroelectronics

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Through Hole

Package / Case

TO-247-3

Current - Continuous Drain (Id) @ 25℃

18A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

150W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

MDmesh™ M2-EP

Part Status

Active

Factory Lead Time

16 Weeks

Peak Reflow Temperature (Cel)

NOT SPECIFIED

ECCN Code

EAR99

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STW25N

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

188m Ω @ 9A, 10V

Vgs(th) (Max) @ Id

4.75V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1090pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Drain to Source Voltage (Vdss)

600V

Vgs (Max)

±25V

RoHS Status

ROHS3 Compliant

STMicroelectronics STW28N60M2

In stock

SKU: STW28N60M2-11
Manufacturer

STMicroelectronics

Power Dissipation (Max)

170W Tc

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

24A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Channels

1

Number of Elements

1

Turn Off Delay Time

100 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

MDmesh™ II Plus

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Base Part Number

STW28N

Contact Plating

Tin

Factory Lead Time

16 Weeks

Vgs (Max)

±25V

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

14.5 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

150m Ω @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Rise Time

7.2ns

Fall Time (Typ)

8 ns

Continuous Drain Current (ID)

24A

Element Configuration

Single

Gate to Source Voltage (Vgs)

25V

Drain Current-Max (Abs) (ID)

22A

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

88A

Height

20.15mm

Length

15.75mm

Width

5.15mm

RoHS Status

ROHS3 Compliant

Power Dissipation

170W

Lead Free

Lead Free

STMicroelectronics STW29NK50Z

In stock

SKU: STW29NK50Z-11
Manufacturer

STMicroelectronics

Series

SuperMESH™

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

31A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

350W Tc

Turn Off Delay Time

129 ns

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

500V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Current Rating

31A

Packaging

Tube

Base Part Number

STW29N

Rise Time

41ns

Vgs (Max)

±30V

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

350W

Turn On Delay Time

44.5 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

130m Ω @ 15.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 150μA

Input Capacitance (Ciss) (Max) @ Vds

6110pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

266nC @ 10V

Pin Count

3

Qualification Status

Not Qualified

Fall Time (Typ)

33 ns

Continuous Drain Current (ID)

31A

JEDEC-95 Code

TO-247AC

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

500V

Avalanche Energy Rating (Eas)

550 mJ

Height

20.15mm

Length

15.75mm

Width

5.15mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

STMicroelectronics STW30N80K5

In stock

SKU: STW30N80K5-11
Manufacturer

STMicroelectronics

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Through Hole

Package / Case

TO-247-3

Current - Continuous Drain (Id) @ 25℃

24A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

250W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

MDmesh™ K5

Part Status

Active

Factory Lead Time

17 Weeks

Peak Reflow Temperature (Cel)

NOT SPECIFIED

ECCN Code

EAR99

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STW30N

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

180m Ω @ 12A, 10V

Vgs(th) (Max) @ Id

5V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds

1530pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Drain to Source Voltage (Vdss)

800V

Vgs (Max)

±30V

RoHS Status

ROHS3 Compliant

STMicroelectronics STW30NM60N

In stock

SKU: STW30NM60N-11
Manufacturer

STMicroelectronics

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

25A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

190W Tc

Turn Off Delay Time

125 ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Series

MDmesh™ II

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Resistance

130mOhm

Terminal Finish

TIN

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Operating Temperature

150°C TJ

Base Part Number

STW30N

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Qualification Status

Not Qualified

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

190W

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

130m Ω @ 12.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Pin Count

3

JESD-30 Code

R-PSFM-T3

Rise Time

24ns

Vgs (Max)

±30V

Fall Time (Typ)

70 ns

Continuous Drain Current (ID)

25A

JEDEC-95 Code

TO-247AC

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

600V

Avalanche Energy Rating (Eas)

900 mJ

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

STMicroelectronics STW30NM60ND

In stock

SKU: STW30NM60ND-11
Manufacturer

STMicroelectronics

Packaging

Tube

Package / Case

TO-247-3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

25A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

190W Tc

Turn Off Delay Time

110 ns

JESD-30 Code

R-PSFM-T3

Operating Temperature

150°C TJ

Series

FDmesh™ II

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

130mOhm

Base Part Number

STW30N

Pin Count

3

Mounting Type

Through Hole

Mount

Through Hole

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 50V

Voltage

600V

Current

34A

Operating Mode

ENHANCEMENT MODE

Power Dissipation

190W

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

130m Ω @ 12.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Rise Time

50ns

Qualification Status

Not Qualified

Vgs (Max)

±25V

Fall Time (Typ)

75 ns

Continuous Drain Current (ID)

25A

Gate to Source Voltage (Vgs)

25V

Drain to Source Breakdown Voltage

600V

Avalanche Energy Rating (Eas)

900 mJ

RoHS Status

ROHS3 Compliant

Element Configuration

Single

Lead Free

Lead Free

STMicroelectronics STW33N60M2

In stock

SKU: STW33N60M2-11
Manufacturer

STMicroelectronics

Base Part Number

STW33N

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Current - Continuous Drain (Id) @ 25℃

26A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Turn Off Delay Time

109 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation (Max)

190W Tc

Packaging

Tube

Series

MDmesh™ II Plus

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

16 Weeks

Drain to Source Voltage (Vdss)

600V

Vgs (Max)

±25V

Turn On Delay Time

16 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

125m Ω @ 13A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1781pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

45.5nC @ 10V

Rise Time

9.6ns

Element Configuration

Single

Number of Channels

1

Fall Time (Typ)

9 ns

Continuous Drain Current (ID)

26A

Gate to Source Voltage (Vgs)

25V

Height

20.15mm

Length

15.75mm

Width

5.15mm

RoHS Status

ROHS3 Compliant

Power Dissipation

190W

Lead Free

Lead Free

STMicroelectronics STW34NB20

In stock

SKU: STW34NB20-11
Manufacturer

STMicroelectronics

JESD-609 Code

e3

Package / Case

TO-247-3

Number of Pins

3

Weight

45.359237mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

34A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

180W Tc

Operating Temperature

150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Series

PowerMESH™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

75mOhm

Terminal Finish

Tin (Sn)

Additional Feature

AVALANCHE RATED

Voltage - Rated DC

200V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Current Rating

34A

Mounting Type

Through Hole

Mount

Through Hole

Rise Time

40ns

Pin Count

3

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

180W

Turn On Delay Time

30 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

75m Ω @ 17A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

3300pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±30V

Fall Time (Typ)

18 ns

Base Part Number

STW34N

Continuous Drain Current (ID)

34A

JEDEC-95 Code

TO-247AC

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

200V

Avalanche Energy Rating (Eas)

650 mJ

Turn On Time-Max (ton)

95ns

Height

20.15mm

Length

15.75mm

Width

5.15mm

RoHS Status

ROHS3 Compliant

Qualification Status

Not Qualified

Lead Free

Lead Free