Showing 13285–13296 of 15245 results
STMicroelectronics STW35N60M2-EP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Operating Temperature |
150°C TJ |
| Series |
MDmesh™ M2-EP |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STW35N |
| FET Type |
N-Channel |
| Drain to Source Voltage (Vdss) |
600V |
| RoHS Status |
RoHS Compliant |
STMicroelectronics STW35N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
27A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
60 ns |
| Pin Count |
3 |
| Mount |
Through Hole |
| Series |
MDmesh™ V |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
98MOhm |
| Terminal Finish |
Tin (Sn) |
| Base Part Number |
STW35N |
| Operating Temperature |
150°C TJ |
| Element Configuration |
Single |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
16 ns |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
60 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
98m Ω @ 13.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3750pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
83nC @ 10V |
| Rise Time |
12ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
160W |
| Continuous Drain Current (ID) |
27A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Avalanche Energy Rating (Eas) |
800 mJ |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STW36N55M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Power Dissipation (Max) |
190W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
33A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Base Part Number |
STW36N |
| Factory Lead Time |
17 Weeks |
| Turn Off Delay Time |
56 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
33A |
| Turn On Delay Time |
56 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
80m Ω @ 16.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2950pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
62nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
190W |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.08Ohm |
| Drain to Source Breakdown Voltage |
550V |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STW37N60DM2AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
28A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
210W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STW37N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
110m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
54nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
28A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STW38N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Base Part Number |
STW38N |
| Factory Lead Time |
17 Weeks |
| Packaging |
Tube |
| Series |
MDmesh™ V |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
95mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Turn Off Delay Time |
66 ns |
| Element Configuration |
Single |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
9 ns |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
66 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
95m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3000pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
71nC @ 10V |
| Rise Time |
9ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
190W |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Avalanche Energy Rating (Eas) |
660 mJ |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STW3N170
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Current - Continuous Drain (Id) @ 25℃ |
2.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
160mW |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
PowerMESH™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
12 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Base Part Number |
STW3N |
| Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13 Ω @ 1.3A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Drain to Source Voltage (Vdss) |
1700V |
| Vgs (Max) |
±30V |
| Drain Current-Max (Abs) (ID) |
2.3A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STW40N20
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
74 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
200V |
| Current Rating |
40A |
| Base Part Number |
STW40N |
| Packaging |
Tube |
| JESD-30 Code |
R-PSFM-T3 |
| Rise Time |
44ns |
| Vgs (Max) |
±20V |
| Power Dissipation |
160W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
40A |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.045Ohm |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
230 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STW40N90K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
446W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ K5 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STW40N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
99m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3260pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
89nC @ 10V |
| Drain to Source Voltage (Vdss) |
900V |
| Vgs (Max) |
±30V |
| RoHS Status |
RoHS Compliant |
STMicroelectronics STW40N95DK5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
38A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
450W Tc |
| Operating Temperature |
-55°C~150°C |
| Packaging |
Tube |
| Series |
MDmesh™ DK5 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STW40N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 19A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3480pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Drain to Source Voltage (Vdss) |
950V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STW42N60M2-EP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
34A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
250W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ M2-EP |
| Part Status |
Active |
| Factory Lead Time |
16 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STW42N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
87m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
4.75V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2370pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
55nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
34A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STW43NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
140 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
37A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Base Part Number |
STW43N |
| Mount |
Through Hole |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ II |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
85mOhm |
| Power Dissipation (Max) |
255W Tc |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 10V |
| Rise Time |
20ns |
| Power Dissipation |
255W |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
85m Ω @ 18.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4200pF @ 50V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
42 ns |
| Continuous Drain Current (ID) |
18.5A |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
500V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STW45N60DM6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
210W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
MDmesh™ DM6 |
| Part Status |
Active |
| Factory Lead Time |
16 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Base Part Number |
STW45N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
99m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4.75V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1920pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| RoHS Status |
RoHS Compliant |