Manufacturer	STMicroelectronics
Turn Off Delay Time	79.5 ns
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	35A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Resistance	78MOhm
Factory Lead Time	17 Weeks
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Power Dissipation (Max)	210W Tc
Terminal Finish	Matte Tin (Sn)
Gate Charge (Qg) (Max) @ Vgs	91nC @ 10V
Vgs (Max)	±20V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	208W
Turn On Delay Time	79.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	78m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3375pF @ 100V
Base Part Number	STW45N
Element Configuration	Single
Continuous Drain Current (ID)	35A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	650V
Height	20.15mm
Length	15.75mm
Width	5.15mm

Manufacturer	STMicroelectronics
Terminal Finish	Tin (Sn)
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Current - Continuous Drain (Id) @ 25℃	42A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Turn Off Delay Time	80 ns
Operating Temperature	175°C TJ
Power Dissipation (Max)	300W Tc
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Mount	Through Hole
Factory Lead Time	12 Weeks
Rise Time	38ns
Vgs (Max)	±20V
Turn On Delay Time	25 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	75m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Element Configuration	Single
Base Part Number	STW46N
Fall Time (Typ)	46 ns
Continuous Drain Current (ID)	42A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	300V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Power Dissipation	300W
Lead Free	Lead Free

Manufacturer	STMicroelectronics
Operating Temperature	150°C TJ
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	35A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	255W Tc
Base Part Number	STW47N
Mount	Through Hole
Packaging	Tube
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	88MOhm
Terminal Finish	Tin (Sn)
Turn Off Delay Time	120 ns
Pin Count	3
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	255W
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	88m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
JESD-30 Code	R-PSFM-T3
Element Configuration	Single
Rise Time	40ns
Vgs (Max)	±25V
Fall Time (Typ)	50 ns
Continuous Drain Current (ID)	35A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	600V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

Manufacturer	STMicroelectronics
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-4
Current - Continuous Drain (Id) @ 25℃	42A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	300W Tc
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ M2
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STW48N
Configuration	Single
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	70m Ω @ 21A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3060pF @ 100V
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Drain to Source Voltage (Vdss)	600V
Vgs (Max)	±25V
Continuous Drain Current (ID)	42A
RoHS Status	ROHS3 Compliant

Discrete Semiconductors