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Discrete Semiconductors
STMicroelectronics STW57N65M5-4
In stock
Manufacturer |
STMicroelectronics |
---|---|
Element Configuration |
Single |
Mounting Type |
Through Hole |
Package / Case |
TO-247-4 |
Number of Pins |
4 |
Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Turn Off Delay Time |
14 ns |
Operating Temperature |
150°C TJ |
Power Dissipation (Max) |
250W Tc |
Packaging |
Tube |
Series |
MDmesh™ V |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Base Part Number |
STW57N |
Mount |
Through Hole |
Factory Lead Time |
26 Weeks |
Continuous Drain Current (ID) |
42A |
Gate to Source Voltage (Vgs) |
25V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
4200pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
98nC @ 10V |
Rise Time |
9ns |
Vgs (Max) |
±25V |
Fall Time (Typ) |
8 ns |
FET Type |
N-Channel |
Turn On Delay Time |
79 ns |
Drain to Source Breakdown Voltage |
650V |
Height |
21.1mm |
Length |
15.9mm |
Width |
5.1mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Rds On (Max) @ Id, Vgs |
63m Ω @ 21A, 10V |
Lead Free |
Lead Free |
STMicroelectronics STW60NM50N
In stock
Manufacturer |
STMicroelectronics |
---|---|
Operating Temperature |
150°C TJ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
68A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
446W Tc |
Base Part Number |
STW60N |
Mount |
Through Hole |
Packaging |
Tube |
Series |
MDmesh™ II |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Turn Off Delay Time |
40 ns |
JESD-30 Code |
R-PSFM-T3 |
Rise Time |
36ns |
Vgs (Max) |
±25V |
Power Dissipation |
446W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
43m Ω @ 34A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
5790pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
178nC @ 10V |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Fall Time (Typ) |
27.5 ns |
Continuous Drain Current (ID) |
68A |
Gate to Source Voltage (Vgs) |
25V |
Drain-source On Resistance-Max |
0.043Ohm |
Drain to Source Breakdown Voltage |
500V |
Pulsed Drain Current-Max (IDM) |
272A |
Avalanche Energy Rating (Eas) |
551 mJ |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STW62N65M5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Turn Off Delay Time |
8 ns |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
46A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Operating Mode |
ENHANCEMENT MODE |
Factory Lead Time |
17 Weeks |
Operating Temperature |
150°C TJ |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Base Part Number |
STW62N |
Element Configuration |
Single |
Power Dissipation (Max) |
330W Tc |
Power Dissipation |
330W |
Fall Time (Typ) |
14 ns |
Continuous Drain Current (ID) |
46A |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
49m Ω @ 23A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
6420pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
142nC @ 10V |
Rise Time |
11ns |
Drain to Source Voltage (Vdss) |
650V |
Vgs (Max) |
±25V |
Turn On Delay Time |
101 ns |
FET Type |
N-Channel |
Gate to Source Voltage (Vgs) |
25V |
Drain-source On Resistance-Max |
0.049Ohm |
Drain to Source Breakdown Voltage |
710V |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STW63N65DM2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
17 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
65A |
Series |
FDmesh™ II Plus |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STW63N |
FET Type |
N-Channel |
Gate Charge (Qg) (Max) @ Vgs |
145nC @ 10V |
Drain to Source Voltage (Vdss) |
650V |
RoHS Status |
RoHS Compliant |
STMicroelectronics STW65N023M9-4
In stock
Manufacturer |
STMicroelectronics |
---|---|
Package / Case |
TO-247-4 |
Mounting Style |
Through Hole |
Channel Mode |
Enhancement |
Id - Continuous Drain Current |
95 A |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
463 W |
Qg - Gate Charge |
230 nC |
Rds On - Drain-Source Resistance |
23 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
650 V |
Vgs - Gate-Source Voltage |
– 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage |
4.2 V |
Technology |
Si |
Number of Channels |
1 Channel |
STMicroelectronics STW65N80K5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
17 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
46A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
446W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ K5 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STW65N |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
80m Ω @ 23A, 10V |
Vgs(th) (Max) @ Id |
5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
3230pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
92nC @ 10V |
Drain to Source Voltage (Vdss) |
800V |
Vgs (Max) |
±30V |
Continuous Drain Current (ID) |
46A |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STW68N60M6
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
16 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Packaging |
Tube |
Series |
MDmesh™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STW68N |
Drain to Source Resistance |
35mOhm |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STW6N90K5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
17 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
110W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ K5 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
STW6N |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
1.1 Ω @ 3A, 10V |
Vgs(th) (Max) @ Id |
5V @ 100μA |
Drain to Source Voltage (Vdss) |
900V |
Vgs (Max) |
±30V |
RoHS Status |
RoHS Compliant |
STMicroelectronics STW70N60M2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Element Configuration |
Single |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
68A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
450W Tc |
Turn Off Delay Time |
155 ns |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ II Plus |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Base Part Number |
STW70N |
Number of Channels |
1 |
Contact Plating |
Tin |
Factory Lead Time |
16 Weeks |
Fall Time (Typ) |
9 ns |
Continuous Drain Current (ID) |
68A |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
40m Ω @ 34A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
5200pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
118nC @ 10V |
Rise Time |
17ns |
Drain to Source Voltage (Vdss) |
600V |
Vgs (Max) |
±25V |
Power Dissipation |
450W |
Operating Mode |
ENHANCEMENT MODE |
Threshold Voltage |
3V |
Gate to Source Voltage (Vgs) |
25V |
Drain-source On Resistance-Max |
0.04Ohm |
Pulsed Drain Current-Max (IDM) |
272A |
DS Breakdown Voltage-Min |
600V |
Avalanche Energy Rating (Eas) |
9000 mJ |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
32 ns |
Lead Free |
Lead Free |
STMicroelectronics STW74NF30
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
12 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
60A |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STW74N |
FET Type |
N-Channel |
Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
Drain to Source Voltage (Vdss) |
300V |
RoHS Status |
RoHS Compliant |
STMicroelectronics STW75NF20
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
190W Tc |
Turn Off Delay Time |
75 ns |
Element Configuration |
Single |
Factory Lead Time |
12 Weeks |
Series |
STripFET™ |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
34MOhm |
Terminal Finish |
Matte Tin (Sn) |
Base Part Number |
STW75N |
Pin Count |
3 |
Operating Temperature |
-50°C~150°C TJ |
Operating Mode |
ENHANCEMENT MODE |
Threshold Voltage |
3V |
JEDEC-95 Code |
TO-247AB |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
34m Ω @ 37A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
3260pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
84nC @ 10V |
Rise Time |
33ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
29 ns |
Continuous Drain Current (ID) |
37A |
Power Dissipation |
190W |
Turn On Delay Time |
53 ns |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
75A |
Drain to Source Breakdown Voltage |
200V |
Avalanche Energy Rating (Eas) |
205 mJ |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STW80NE06-10
In stock
Manufacturer |
STMicroelectronics |
---|---|
JESD-609 Code |
e0 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
250W Tc |
Operating Temperature |
175°C TJ |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
Voltage - Rated DC |
60V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Current Rating |
80A |
Series |
STripFET™ |
Base Part Number |
STW80N |
Gate Charge (Qg) (Max) @ Vgs |
189nC @ 10V |
Rise Time |
150ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
250W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
10m Ω @ 40A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
7600pF @ 25V |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Vgs (Max) |
±20V |
Fall Time (Typ) |
75 ns |
Continuous Drain Current (ID) |
80A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.01Ohm |
Drain to Source Breakdown Voltage |
60V |
Pulsed Drain Current-Max (IDM) |
320A |
Avalanche Energy Rating (Eas) |
350 mJ |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Contains Lead |