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Discrete Semiconductors
STMicroelectronics STW80NF55-08
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
300W Tc |
Turn Off Delay Time |
75 ns |
Pin Count |
3 |
Mount |
Through Hole |
Series |
STripFET™ |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Base Part Number |
STW80N |
Operating Temperature |
-55°C~175°C TJ |
JESD-30 Code |
R-PSFM-T3 |
Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
Rise Time |
110ns |
Power Dissipation |
300W |
Case Connection |
DRAIN |
Turn On Delay Time |
20 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
8m Ω @ 40A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
3850pF @ 25V |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Vgs (Max) |
±20V |
Fall Time (Typ) |
35 ns |
Continuous Drain Current (ID) |
80A |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.008Ohm |
Drain to Source Breakdown Voltage |
55V |
Pulsed Drain Current-Max (IDM) |
320A |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STW88N65M5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Operating Temperature |
150°C TJ |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
84A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
450W Tc |
Number of Channels |
1 |
Factory Lead Time |
17 Weeks |
Packaging |
Tube |
Series |
MDmesh™ V |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
24mOhm |
Base Part Number |
STW88N |
Pin Count |
3 |
Turn Off Delay Time |
141 ns |
Element Configuration |
Single |
Threshold Voltage |
4V |
Gate to Source Voltage (Vgs) |
25V |
Case Connection |
DRAIN |
Turn On Delay Time |
141 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
29m Ω @ 42A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
8825pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
204nC @ 10V |
Vgs (Max) |
±25V |
Continuous Drain Current (ID) |
84A |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
450W |
Drain to Source Breakdown Voltage |
650V |
Avalanche Energy Rating (Eas) |
2000 mJ |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
4 V |
Height |
24.45mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STW8N90K5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
17 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
130W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ K5 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
STW8N |
FET Type |
N-Channel |
Vgs(th) (Max) @ Id |
5V @ 100μA |
Drain to Source Voltage (Vdss) |
900V |
Vgs (Max) |
±30V |
Drain to Source Resistance |
600mOhm |
RoHS Status |
RoHS Compliant |
STMicroelectronics STW9N150
In stock
Manufacturer |
STMicroelectronics |
---|---|
Number of Terminations |
3 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
PowerMESH™ |
JESD-609 Code |
e3 |
Part Status |
Active |
Turn On Delay Time |
41 ns |
Factory Lead Time |
12 Weeks |
ECCN Code |
EAR99 |
Resistance |
2.5Ohm |
Terminal Finish |
Tin (Sn) |
Base Part Number |
STW9N |
Pin Count |
3 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
320W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
320W |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
N-Channel |
Continuous Drain Current (ID) |
8A |
Threshold Voltage |
4V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
3255pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
8A Tc |
Gate Charge (Qg) (Max) @ Vgs |
89.3nC @ 10V |
Rise Time |
14.7ns |
Drain to Source Voltage (Vdss) |
1500V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
52 ns |
Turn-Off Delay Time |
86 ns |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
2.5 Ω @ 4A, 10V |
Gate to Source Voltage (Vgs) |
30V |
Drain Current-Max (Abs) (ID) |
8A |
Drain to Source Breakdown Voltage |
1.5kV |
Avalanche Energy Rating (Eas) |
720 mJ |
Max Junction Temperature (Tj) |
150°C |
Height |
24.45mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STWA20N95K5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Turn Off Delay Time |
70 ns |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
38.000013g |
Current - Continuous Drain (Id) @ 25℃ |
17.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
17 Weeks |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
SuperMESH5™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Power Dissipation (Max) |
250W Tc |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
Rise Time |
12ns |
Element Configuration |
Single |
Turn On Delay Time |
17 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
330m Ω @ 9A, 10V |
Vgs(th) (Max) @ Id |
5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 100V |
Base Part Number |
STWA20 |
Number of Channels |
1 |
Drain to Source Voltage (Vdss) |
950V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
20 ns |
Continuous Drain Current (ID) |
17.5A |
Gate to Source Voltage (Vgs) |
30V |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STWA40N95DK5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
17 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
38A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
450W Tc |
Operating Temperature |
-55°C~150°C |
Packaging |
Tube |
Series |
MDmesh™ DK5 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
STWA40 |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
130m Ω @ 19A, 10V |
Vgs(th) (Max) @ Id |
5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
3480pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
Drain to Source Voltage (Vdss) |
950V |
Vgs (Max) |
±30V |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STWA40N95K5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
17 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
38A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
450W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STWA40 |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
130m Ω @ 19A, 10V |
Vgs(th) (Max) @ Id |
5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
3300pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
93nC @ 10V |
Drain to Source Voltage (Vdss) |
950V |
Vgs (Max) |
±30V |
Continuous Drain Current (ID) |
38A |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STWA45N65M5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Turn Off Delay Time |
16 ns |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Element Configuration |
Single |
Power Dissipation (Max) |
210W Tc |
Operating Temperature |
150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ V |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Base Part Number |
STWA45 |
Mount |
Through Hole |
Factory Lead Time |
17 Weeks |
Vgs (Max) |
±25V |
Power Dissipation |
210W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
78m Ω @ 17.5A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
3470pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
82nC @ 10V |
Rise Time |
11ns |
Fall Time (Typ) |
9.3 ns |
Continuous Drain Current (ID) |
35A |
Operating Mode |
ENHANCEMENT MODE |
Gate to Source Voltage (Vgs) |
25V |
Drain-source On Resistance-Max |
0.078Ohm |
Drain to Source Breakdown Voltage |
650V |
Pulsed Drain Current-Max (IDM) |
140A |
Avalanche Energy Rating (Eas) |
810 mJ |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
79.5 ns |
Lead Free |
Lead Free |
STMicroelectronics STWA48N60M2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
300W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ |
Part Status |
Active |
Factory Lead Time |
16 Weeks |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
ECCN Code |
EAR99 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STWA48 |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
70m Ω @ 21A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
3060pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
Drain to Source Voltage (Vdss) |
600V |
Vgs (Max) |
±25V |
Continuous Drain Current (ID) |
42A |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STWA68N60M6
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
16 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
63A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
390W Tc |
Operating Temperature |
-55°C~150°C TJ |
Series |
MDmesh™ M6 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STWA68 |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
41m Ω @ 31.5A, 10V |
Vgs(th) (Max) @ Id |
4.75V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
4360pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
106nC @ 10V |
Drain to Source Voltage (Vdss) |
600V |
Vgs (Max) |
±25V |
RoHS Status |
RoHS Compliant |
STMicroelectronics STWA70N60DM2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
17 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
66A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
446W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ DM2 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STWA70 |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
42m Ω @ 33A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
5508pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
Drain to Source Voltage (Vdss) |
600V |
Vgs (Max) |
±25V |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STWA70N65DM6
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
16 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
68A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
450W Tc |
Operating Temperature |
-55°C~150°C TJ |
Series |
MDmesh™ DM6 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
40m Ω @ 34A, 10V |
Vgs(th) (Max) @ Id |
4.75V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
4900pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
125nC @ 10V |
Drain to Source Voltage (Vdss) |
650V |
Vgs (Max) |
±25V |
RoHS Status |
ROHS3 Compliant |