Showing 13333–13344 of 15245 results
STMicroelectronics STWA75N60M6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current - Continuous Drain (Id) @ 25℃ |
72A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
446W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
MDmesh™ M6 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STWA75 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
36m Ω @ 36A, 10V |
| Vgs(th) (Max) @ Id |
4.75V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4850pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
106nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| RoHS Status |
RoHS Compliant |
STMicroelectronics STY130NF20D
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
130A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
450W Tc |
| Base Part Number |
STY130 |
| Mount |
Through Hole |
| Packaging |
Tube |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
12MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Turn Off Delay Time |
283 ns |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
338nC @ 10V |
| Rise Time |
218ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
450W |
| Turn On Delay Time |
232 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 65A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11100pF @ 25V |
| JESD-30 Code |
R-PSIP-T3 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
250 ns |
| Continuous Drain Current (ID) |
130A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
520A |
| Avalanche Energy Rating (Eas) |
800 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STY30NK90Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
TO-247-3 |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
450W Tc |
| Turn Off Delay Time |
250 ns |
| Operating Temperature |
-65°C~150°C TJ |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
900V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Current Rating |
26A |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
490nC @ 10V |
| Rise Time |
59ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
450W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
260m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
12000pF @ 25V |
| Pin Count |
3 |
| Base Part Number |
STY30N |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
72 ns |
| Continuous Drain Current (ID) |
26A |
| Threshold Voltage |
3.75V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.26Ohm |
| Drain to Source Breakdown Voltage |
900V |
| Avalanche Energy Rating (Eas) |
500 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSIP-T3 |
| Lead Free |
Lead Free |
STMicroelectronics STY60NK30Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Package / Case |
TO-247-3 |
| Number of Pins |
247 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
450W Tc |
| Turn Off Delay Time |
150 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
300V |
| Current Rating |
60A |
| Base Part Number |
STY60N |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Threshold Voltage |
3.75V |
| Gate to Source Voltage (Vgs) |
30V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
220nC @ 10V |
| Rise Time |
90ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
60A |
| Power Dissipation |
450W |
| Operating Mode |
ENHANCEMENT MODE |
| Drain-source On Resistance-Max |
0.045Ohm |
| Drain to Source Breakdown Voltage |
300V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Height |
20.3mm |
| Length |
15.9mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
50 ns |
| Lead Free |
Lead Free |
STMicroelectronics STY80NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
74A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
447W Tc |
| Turn Off Delay Time |
440 ns |
| Pin Count |
3 |
| Mount |
Through Hole |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
35MOhm |
| Terminal Finish |
MATTE TIN |
| Peak Reflow Temperature (Cel) |
225 |
| Base Part Number |
STY80N |
| Operating Temperature |
150°C TJ |
| Element Configuration |
Single |
| Fall Time (Typ) |
200 ns |
| Continuous Drain Current (ID) |
37A |
| Turn On Delay Time |
50 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35m Ω @ 37A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10100pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
360nC @ 10V |
| Rise Time |
65ns |
| Vgs (Max) |
±25V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
447W |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
25V |
| Drain Current-Max (Abs) (ID) |
74A |
| Drain to Source Breakdown Voltage |
600V |
| Height |
20.3mm |
| Length |
15.9mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Susumu 2N4222
In stock
| Manufacturer |
Susumu |
|---|---|
| Surface Mount |
NO |
| Number of Terminals |
4 |
| Transistor Element Material |
SILICON |
| Package Shape |
ROUND |
| HTS Code |
8541.21.00.95 |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Reach Compliance Code |
unknown |
| JESD-30 Code |
O-MBCY-W4 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
SINGLE |
| Operating Mode |
DEPLETION MODE |
| Transistor Application |
AMPLIFIER |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-72 |
| FET Technology |
JUNCTION |
| Power Dissipation-Max (Abs) |
0.3 W |
| Feedback Cap-Max (Crss) |
2 pF |
| Highest Frequency Band |
VERY HIGH FREQUENCY BAND |