Showing 13405–13416 of 15245 results
Taiwan Semiconductor Corporation TSM5NC50CF C0G
In stock
| Manufacturer |
Taiwan Semiconductor Corporation |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
40W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Elements |
1 |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Factory Lead Time |
20 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.38 Ω @ 1.7A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
586pF @ 50V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSFM-T3 |
| Vgs (Max) |
±30V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
5A |
| Pulsed Drain Current-Max (IDM) |
15A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
122.5 mJ |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM5NC50CZ C0G
In stock
| Manufacturer |
Taiwan Semiconductor Corporation |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
89W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Active |
| Factory Lead Time |
18 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.38 Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
586pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM60N380CI C0G
In stock
| Manufacturer |
Taiwan Semiconductor Corporation |
|---|---|
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
125W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1040pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
20.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM60NB150CF C0G
In stock
| Manufacturer |
Taiwan Semiconductor Corporation |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
62.5W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Active |
| Factory Lead Time |
36 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 4.3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1765pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM60NB600CF C0G
In stock
| Manufacturer |
Taiwan Semiconductor Corporation |
|---|---|
| Factory Lead Time |
36 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
41.7W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 1.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
528pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM60NB900CH C5G
In stock
| Manufacturer |
Taiwan Semiconductor Corporation |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
36 Weeks |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Power Dissipation (Max) |
36.8W Tc |
| JESD-30 Code |
R-PSIP-T3 |
| Gate Charge (Qg) (Max) @ Vgs |
9.6nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 1.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
315pF @ 100V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±30V |
| Drain Current-Max (Abs) (ID) |
4A |
| Drain-source On Resistance-Max |
0.9Ohm |
| Pulsed Drain Current-Max (IDM) |
12A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
42.3 mJ |
| RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM70N1R4CH C5G
In stock
| Manufacturer |
Taiwan Semiconductor Corporation |
|---|---|
| Part Status |
Not For New Designs |
| Supplier Device Package |
TO-251 (IPAK) |
| Current - Continuous Drain (Id) @ 25℃ |
3.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
38W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| FET Type |
N-Channel |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Rds On (Max) @ Id, Vgs |
1.4Ohm @ 1.2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
370pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
7.7nC @ 10V |
| Drain to Source Voltage (Vdss) |
700V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM70N750CH C5G
In stock
| Manufacturer |
Taiwan Semiconductor Corporation |
|---|---|
| Factory Lead Time |
36 Weeks |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-251 (IPAK) |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
62.5W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
750mOhm @ 1.8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
555pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
10.7nC @ 10V |
| Drain to Source Voltage (Vdss) |
700V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM7NC65CF C0G
In stock
| Manufacturer |
Taiwan Semiconductor Corporation |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
44.6W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Elements |
1 |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Factory Lead Time |
20 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.35 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1169pF @ 50V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSFM-T3 |
| Vgs (Max) |
±30V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
7A |
| Pulsed Drain Current-Max (IDM) |
21A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
160 mJ |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM7P06CP ROG
In stock
| Manufacturer |
Taiwan Semiconductor Corporation |
|---|---|
| Factory Lead Time |
20 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
15.6W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Digi-Reel® |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
425pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
8.2nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM80N1R2CI C0G
In stock
| Manufacturer |
Taiwan Semiconductor Corporation |
|---|---|
| Power Dissipation (Max) |
25W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Position |
SINGLE |
| Number of Terminations |
3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Elements |
1 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
5.5A Tc |
| Transistor Element Material |
SILICON |
| Surface Mount |
NO |
| Mounting Type |
Through Hole |
| Factory Lead Time |
24 Weeks |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drain to Source Voltage (Vdss) |
800V |
| Avalanche Energy Rating (Eas) |
121 mJ |
| DS Breakdown Voltage-Min |
800V |
| Pulsed Drain Current-Max (IDM) |
16.5A |
| Drain Current-Max (Abs) (ID) |
5.5A |
| JEDEC-95 Code |
TO-220AB |
| Vgs (Max) |
±30V |
| Gate Charge (Qg) (Max) @ Vgs |
19.4nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Input Capacitance (Ciss) (Max) @ Vds |
685pF @ 100V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 1.8A, 10V |
| Transistor Application |
SWITCHING |
| FET Type |
N-Channel |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM80N1R2CP ROG
In stock
| Manufacturer |
Taiwan Semiconductor Corporation |
|---|---|
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
5.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Digi-Reel® |
| Part Status |
Active |
| Factory Lead Time |
30 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 2.75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
685pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
19.4nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |