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Discrete Semiconductors
Taiwan Semiconductor Corporation TSM80N950CI C0G
In stock
Manufacturer |
Taiwan Semiconductor Corporation |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Through Hole |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Factory Lead Time |
24 Weeks |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Power Dissipation (Max) |
25W Tc |
JESD-30 Code |
R-PSFM-T3 |
Drain to Source Voltage (Vdss) |
800V |
Vgs (Max) |
±30V |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
950m Ω @ 2A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
691pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
19.6nC @ 10V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
JEDEC-95 Code |
TO-220AB |
Drain Current-Max (Abs) (ID) |
6A |
Drain-source On Resistance-Max |
0.95Ohm |
Pulsed Drain Current-Max (IDM) |
18A |
DS Breakdown Voltage-Min |
800V |
Avalanche Energy Rating (Eas) |
121 mJ |
RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM950N10CW RPG
In stock
Manufacturer |
Taiwan Semiconductor Corporation |
---|---|
Factory Lead Time |
20 Weeks |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Current - Continuous Drain (Id) @ 25℃ |
6.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
9W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Digi-Reel® |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
95m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1480pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs |
9.3nC @ 10V |
Drain to Source Voltage (Vdss) |
100V |
Vgs (Max) |
±20V |
RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor Corporation TSM9N90ECZ C0G
In stock
Manufacturer |
Taiwan Semiconductor Corporation |
---|---|
Factory Lead Time |
24 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
89W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
1.4 Ω @ 4.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2470pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
72nC @ 10V |
Drain to Source Voltage (Vdss) |
900V |
Vgs (Max) |
±30V |
RoHS Status |
ROHS3 Compliant |
Taiwan Semiconductor TQM150NB04DCR
In stock
Manufacturer |
Taiwan Semiconductor |
---|---|
Package / Case |
PDFN56U-8 |
Mounting Style |
SMD/SMT |
Brand |
Taiwan Semiconductor |
Channel Mode |
Enhancement |
Factory Pack Quantity:Factory Pack Quantity |
5000 |
Forward Transconductance - Min |
38 S |
Id - Continuous Drain Current |
39 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Part # Aliases |
TQM150NB04DCR RLG |
Pd - Power Dissipation |
48 W |
Qg - Gate Charge |
18 nC |
Qualification |
AEC-Q101 |
Rds On - Drain-Source Resistance |
15 mOhms |
Transistor Polarity |
N-Channel |
Typical Turn-Off Delay Time |
13 ns |
Typical Turn-On Delay Time |
7 ns |
Unit Weight |
0.013143 oz |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage |
4 V |
Packaging |
MouseReel |
Subcategory |
MOSFETs |
Technology |
Si |
Configuration |
Dual |
Number of Channels |
2 Channel |
Rise Time |
8 ns |
Product Type |
MOSFET |
Transistor Type |
2 N-Channel |
Product Category |
MOSFET |