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Series
Discrete Semiconductors
Taiwan Semiconductor TSM160N10CZ
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In stock
SKU:
TSM160N10CZ-11
Manufacturer |
Taiwan Semiconductor |
---|---|
Package / Case |
TO-220-3 |
Mounting Style |
Through Hole |
Brand |
Taiwan Semiconductor |
Channel Mode |
Enhancement |
Factory Pack Quantity:Factory Pack Quantity |
1000 |
Id - Continuous Drain Current |
160 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
300 W |
Qg - Gate Charge |
154 nC |
Rds On - Drain-Source Resistance |
4.5 mOhms |
Transistor Polarity |
N-Channel |
Typical Turn-Off Delay Time |
85 ns |
Typical Turn-On Delay Time |
25 ns |
Unit Weight |
0.068784 oz |
Vds - Drain-Source Breakdown Voltage |
100 V |
Vgs th - Gate-Source Threshold Voltage |
2 V |
Packaging |
Tube |
Subcategory |
MOSFETs |
Technology |
Si |
Configuration |
Single |
Number of Channels |
1 Channel |
Rise Time |
40 ns |
Product Type |
MOSFET |
Transistor Type |
1 N-Channel |
Product Category |
MOSFET |