Showing 13477–13488 of 15245 results
Texas Instruments CSD13202Q2
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
6-VDFN Exposed Pad |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.7W Ta |
| Turn Off Delay Time |
11 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
NexFET™ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Contact Plating |
Tin |
| Factory Lead Time |
8 Weeks |
| Rise Time |
28ns |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.7W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.3m Ω @ 5A, 4.5V |
| Vgs(th) (Max) @ Id |
1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
997pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
6.6nC @ 4.5V |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
13.6 ns |
| Base Part Number |
CSD13302 |
| Continuous Drain Current (ID) |
22A |
| Threshold Voltage |
800mV |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
12V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| Length |
2mm |
| Width |
2mm |
| Thickness |
750μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Texas Instruments CSD13302W
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Terminal Form |
BALL |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
4-UFBGA, DSBGA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.8W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
17 ns |
| Series |
NexFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Terminal Position |
BOTTOM |
| Contact Plating |
Copper, Silver, Tin |
| Factory Lead Time |
6 Weeks |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
1.6A |
| Turn On Delay Time |
6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
17.1m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id |
1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
862pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
7.8nC @ 4.5V |
| Rise Time |
7ns |
| Drain to Source Voltage (Vdss) |
12V |
| Vgs (Max) |
±10V |
| Element Configuration |
Single |
| Base Part Number |
CSD13302 |
| Gate to Source Voltage (Vgs) |
10V |
| Drain-source On Resistance-Max |
0.0285Ohm |
| Pulsed Drain Current-Max (IDM) |
29A |
| DS Breakdown Voltage-Min |
12V |
| Feedback Cap-Max (Crss) |
196 pF |
| Height |
625μm |
| Length |
0m |
| Width |
0m |
| Thickness |
650μm |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Texas Instruments CSD13306WT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Base Part Number |
CSD13306 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
6-UFBGA, DSBGA |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.9W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
20 ns |
| Series |
NexFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Terminal Position |
BOTTOM |
| Terminal Form |
BALL |
| Contact Plating |
Copper, Silver, Tin |
| Factory Lead Time |
6 Weeks |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
8 ns |
| Power Dissipation |
1.9W |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10.2m Ω @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id |
1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1370pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
11.2nC @ 4.5V |
| Rise Time |
11ns |
| Drain to Source Voltage (Vdss) |
12V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
3.5A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
10V |
| Max Junction Temperature (Tj) |
150°C |
| Feedback Cap-Max (Crss) |
294 pF |
| Height |
1mm |
| Length |
1.5mm |
| Width |
1.8mm |
| Thickness |
2mm |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Texas Instruments CSD13381F4
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
2.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Peak Reflow Temperature (Cel) |
260 |
| Turn Off Delay Time |
11 ns |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| Terminal Form |
NO LEAD |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
1.4nC @ 4.5V |
| Base Part Number |
CSD13381 |
| Operating Mode |
0.85 |
| Power Dissipation |
500mW |
| Turn On Delay Time |
3.7 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 6V |
| Rise Time |
1.5ns |
| Fall Time (Typ) |
3.8 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Continuous Drain Current (ID) |
2.1A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
12V |
| Pulsed Drain Current-Max (IDM) |
7A |
| Length |
1.035mm |
| Width |
635μm |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Texas Instruments CSD13383F4T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Base Part Number |
CSD13383 |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.9A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
96 ns |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
BOTTOM |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
315 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
39 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
44m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
291pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
2.6nC @ 4.5V |
| Rise Time |
123ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
2.9A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
10V |
| Drain-source On Resistance-Max |
0.065Ohm |
| Drain to Source Breakdown Voltage |
12V |
| Length |
1.035mm |
| Width |
635μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Texas Instruments CSD15380F3T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Base Part Number |
CSD15380 |
| Mounting Type |
Surface Mount |
| Package / Case |
3-SMD, No Lead |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
500mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 8V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
500mW Ta |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Threshold Voltage |
1.1V |
| Drain Current-Max (Abs) (ID) |
0.5A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1190m Ω @ 100mA, 8V |
| Vgs(th) (Max) @ Id |
1.35V @ 2.5μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10.5pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
0.281nC @ 10V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
10V |
| Continuous Drain Current (ID) |
500mA |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Drain-source On Resistance-Max |
4Ohm |
| DS Breakdown Voltage-Min |
20V |
| Feedback Cap-Max (Crss) |
0.17 pF |
| Length |
690μm |
| Width |
600μm |
| Thickness |
345μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Texas Instruments CSD16322Q5
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Ta 97A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta |
| Turn Off Delay Time |
12.3 ns |
| Pin Count |
8 |
| Factory Lead Time |
6 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
CSD16322 |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
97A |
| Threshold Voltage |
1.1V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
6.1 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 20A, 8V |
| Vgs(th) (Max) @ Id |
1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1365pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
9.7nC @ 4.5V |
| Rise Time |
10.7ns |
| Vgs (Max) |
+10V, -8V |
| Fall Time (Typ) |
3.7 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.1W |
| Gate to Source Voltage (Vgs) |
10V |
| Drain-source On Resistance-Max |
0.007Ohm |
| Dual Supply Voltage |
25V |
| Nominal Vgs |
1.1 V |
| Feedback Cap-Max (Crss) |
70 pF |
| Height |
1.05mm |
| Length |
5mm |
| Width |
6mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD16323Q3
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Series |
NexFET™ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Ta 60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta |
| Turn Off Delay Time |
13 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
CSD16323 |
| Pin Count |
8 |
| Contact Plating |
Tin |
| Factory Lead Time |
6 Weeks |
| Threshold Voltage |
1.1V |
| Power Dissipation |
3W |
| Turn On Delay Time |
5.3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 24A, 8V |
| Vgs(th) (Max) @ Id |
1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
8.4nC @ 4.5V |
| Rise Time |
15ns |
| Vgs (Max) |
+10V, -8V |
| Fall Time (Typ) |
6.3 ns |
| Continuous Drain Current (ID) |
60A |
| Gate to Source Voltage (Vgs) |
10V |
| Drain-source On Resistance-Max |
0.0065Ohm |
| Operating Mode |
ENHANCEMENT MODE |
| Drain to Source Breakdown Voltage |
25V |
| Dual Supply Voltage |
25V |
| Nominal Vgs |
1.1 V |
| Feedback Cap-Max (Crss) |
65 pF |
| Height |
1.1mm |
| Length |
3.3mm |
| Width |
3.3mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Contains Lead |
Texas Instruments CSD16323Q3C
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Series |
NexFET™ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Ta 60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta |
| Turn Off Delay Time |
13 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
8 |
| Contact Plating |
Tin |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
CSD16323 |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
S-PDSO-N5 |
| Vgs (Max) |
+10V, -8V |
| Fall Time (Typ) |
6.3 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5.3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 24A, 8V |
| Vgs(th) (Max) @ Id |
1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
8.4nC @ 4.5V |
| Rise Time |
15ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
21A |
| Gate to Source Voltage (Vgs) |
10V |
| Drain Current-Max (Abs) (ID) |
60A |
| Drain-source On Resistance-Max |
0.0072Ohm |
| Drain to Source Breakdown Voltage |
25V |
| Pulsed Drain Current-Max (IDM) |
112A |
| Avalanche Energy Rating (Eas) |
125 mJ |
| Length |
3.3mm |
| Width |
3.3mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD16325Q5
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
33A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta |
| Turn Off Delay Time |
32 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Element Configuration |
Single |
| Series |
NexFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
CSD16325 |
| Pin Count |
8 |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Threshold Voltage |
1.1V |
| Power Dissipation |
3.1W |
| Turn On Delay Time |
10.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2m Ω @ 30A, 8V |
| Vgs(th) (Max) @ Id |
1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4000pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 4.5V |
| Rise Time |
16ns |
| Vgs (Max) |
+10V, -8V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
10V |
| Drain Current-Max (Abs) (ID) |
33A |
| Operating Mode |
ENHANCEMENT MODE |
| Drain-source On Resistance-Max |
0.0027Ohm |
| Dual Supply Voltage |
25V |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Nominal Vgs |
1.1 V |
| Height |
1.05mm |
| Length |
5mm |
| Width |
6mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Contains Lead |
Texas Instruments CSD16325Q5C
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Series |
NexFET™ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
33A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta |
| Turn Off Delay Time |
32 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
3.1W |
| Contact Plating |
Tin |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
CSD16325 |
| Pin Count |
8 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Packaging |
Tape & Reel (TR) |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
10V |
| Drain Current-Max (Abs) (ID) |
33A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2m Ω @ 30A, 8V |
| Vgs(th) (Max) @ Id |
1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4000pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 4.5V |
| Rise Time |
16ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
+10V, -8V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
1.1V |
| Turn On Delay Time |
10.5 ns |
| FET Type |
N-Channel |
| Drain-source On Resistance-Max |
0.0029Ohm |
| Pulsed Drain Current-Max (IDM) |
200A |
| DS Breakdown Voltage-Min |
25V |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Nominal Vgs |
1.1 V |
| Height |
1.05mm |
| Length |
5mm |
| Width |
6mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD16327Q3T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
74W Tc |
| Terminal Form |
NO LEAD |
| Factory Lead Time |
6 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
+10V, -8V |
| Drain Current-Max (Abs) (ID) |
22A |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 24A, 8V |
| Vgs(th) (Max) @ Id |
1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
8.4nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
25V |
| Base Part Number |
CSD16327 |
| Element Configuration |
Single |
| Drain-source On Resistance-Max |
0.0065Ohm |
| Pulsed Drain Current-Max (IDM) |
240A |
| DS Breakdown Voltage-Min |
25V |
| Avalanche Energy Rating (Eas) |
125 mJ |
| Feedback Cap-Max (Crss) |
65 pF |
| Length |
3.3mm |
| Width |
3.3mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |