Showing 13489–13500 of 15245 results
Texas Instruments CSD16340Q3T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta |
| Turn Off Delay Time |
13.8 ns |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
6 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
CSD16340 |
| Vgs (Max) |
+10V, -8V |
| Fall Time (Typ) |
5.2 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 20A, 8V |
| Vgs(th) (Max) @ Id |
1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1350pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
9.2nC @ 4.5V |
| Rise Time |
16.1ns |
| Drain to Source Voltage (Vdss) |
25V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
60A |
| Gate to Source Voltage (Vgs) |
10V |
| Drain Current-Max (Abs) (ID) |
21A |
| Pulsed Drain Current-Max (IDM) |
115A |
| DS Breakdown Voltage-Min |
25V |
| Feedback Cap-Max (Crss) |
69 pF |
| Length |
3.3mm |
| Width |
3.3mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD16401Q5
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
38A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Packaging |
Cut Tape (CT) |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
CSD16401 |
| Pin Count |
8 |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
6 Weeks |
| Drain-source On Resistance-Max |
0.0023Ohm |
| Drain to Source Breakdown Voltage |
25V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4100pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 4.5V |
| Rise Time |
30ns |
| Vgs (Max) |
+16V, -12V |
| Fall Time (Typ) |
12.7 ns |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
1.5V |
| Gate to Source Voltage (Vgs) |
16V |
| Case Connection |
DRAIN |
| Power Dissipation |
3.1W |
| Pulsed Drain Current-Max (IDM) |
240A |
| Dual Supply Voltage |
25V |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Nominal Vgs |
1.5 V |
| Feedback Cap-Max (Crss) |
230 pF |
| Height |
1.05mm |
| Length |
5mm |
| Width |
6mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
16.6 ns |
| Lead Free |
Contains Lead |
Texas Instruments CSD16401Q5T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta |
| Terminal Form |
NO LEAD |
| Factory Lead Time |
6 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
+16V, -12V |
| Drain-source On Resistance-Max |
0.0023Ohm |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4100pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
25V |
| Base Part Number |
CSD16401 |
| Element Configuration |
Single |
| Pulsed Drain Current-Max (IDM) |
240A |
| DS Breakdown Voltage-Min |
25V |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Feedback Cap-Max (Crss) |
230 pF |
| Height |
1.05mm |
| Length |
5mm |
| Width |
6mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD16404Q5A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Pin Count |
8 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Ta 81A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta |
| Turn Off Delay Time |
8.4 ns |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
CSD16404 |
| Contact Plating |
Tin |
| Factory Lead Time |
16 Weeks |
| Continuous Drain Current (ID) |
81A |
| Threshold Voltage |
1.8V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.1m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1220pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
8.5nC @ 4.5V |
| Rise Time |
13.4ns |
| Vgs (Max) |
+16V, -12V |
| Fall Time (Typ) |
4.6 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
16V |
| Drain-source On Resistance-Max |
0.0072Ohm |
| Drain to Source Breakdown Voltage |
25V |
| Dual Supply Voltage |
25V |
| Nominal Vgs |
1.8 V |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
3W |
| Lead Free |
Contains Lead |
Texas Instruments CSD16407Q5C
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Qualification Status |
Not Qualified |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
31A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta |
| Turn Off Delay Time |
16 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
CSD16407 |
| Pin Count |
8 |
| Mount |
Surface Mount |
| Contact Plating |
Tin |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
100A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2660pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 4.5V |
| Rise Time |
18.4ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
+16V, -12V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
16V |
| Drain-source On Resistance-Max |
0.0033Ohm |
| Pulsed Drain Current-Max (IDM) |
200A |
| DS Breakdown Voltage-Min |
25V |
| Nominal Vgs |
1.6 V |
| Height |
1.05mm |
| Length |
5mm |
| Width |
6mm |
| Thickness |
1mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
3.1W |
| Lead Free |
Contains Lead |
Texas Instruments CSD16415Q5T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
+16V, -12V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.15m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4100pF @ 12.5V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Pulsed Drain Current-Max (IDM) |
200A |
| DS Breakdown Voltage-Min |
25V |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Feedback Cap-Max (Crss) |
230 pF |
| Height |
1.05mm |
| Length |
5mm |
| Width |
6mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
| Base Part Number |
CSD16415 |
| Lead Free |
Contains Lead |
Texas Instruments CSD16570Q5BT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Gold |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Weight |
24.012046mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta 195W Tc |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
6 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Turn Off Delay Time |
156 ns |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
72 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
0.59m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
14000pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs |
250nC @ 10V |
| Rise Time |
43ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
CSD16570 |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
1.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
59A |
| Drain to Source Breakdown Voltage |
25V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Length |
5mm |
| Width |
6mm |
| Thickness |
950μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD17302Q5A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Ta 87A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta |
| Turn Off Delay Time |
10.6 ns |
| Base Part Number |
CSD17302 |
| Factory Lead Time |
16 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
8 |
| Vgs (Max) |
+10V, -8V |
| Fall Time (Typ) |
3.1 ns |
| Power Dissipation |
3W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.9m Ω @ 14A, 8V |
| Vgs(th) (Max) @ Id |
1.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
950pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
7nC @ 4.5V |
| Rise Time |
8.4ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
87A |
| Threshold Voltage |
1.2V |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
30V |
| Nominal Vgs |
1.1 V |
| Feedback Cap-Max (Crss) |
45 pF |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD17308Q3T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Series |
NexFET™ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta 44A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.7W Ta 28W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
CSD17308 |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Reach Compliance Code |
not_compliant |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Threshold Voltage |
1.3V |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10.3m Ω @ 10A, 8V |
| Vgs(th) (Max) @ Id |
1.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
700pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
5.1nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
+10V, -8V |
| Continuous Drain Current (ID) |
44A |
| Drain Current-Max (Abs) (ID) |
14A |
| Drain-source On Resistance-Max |
0.0165Ohm |
| Element Configuration |
Single |
| Pulsed Drain Current-Max (IDM) |
167A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
65 mJ |
| Feedback Cap-Max (Crss) |
35 pF |
| Length |
3.3mm |
| Width |
3.3mm |
| Thickness |
1mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Contains Lead |
Texas Instruments CSD17310Q5A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta |
| Turn Off Delay Time |
15 ns |
| Pin Count |
8 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
CSD17310 |
| Contact Plating |
Tin |
| Factory Lead Time |
16 Weeks |
| Fall Time (Typ) |
5 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
6.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.1m Ω @ 20A, 8V |
| Vgs(th) (Max) @ Id |
1.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1560pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
11.6nC @ 4.5V |
| Rise Time |
11.5ns |
| Vgs (Max) |
+10V, -8V |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
1.3V |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
30V |
| Nominal Vgs |
1.3 V |
| Feedback Cap-Max (Crss) |
77 pF |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
3.1W |
| Lead Free |
Contains Lead |
Texas Instruments CSD17311Q5
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
32A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta |
| Turn Off Delay Time |
33 ns |
| Pin Count |
8 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
CSD17311 |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Vgs (Max) |
+10V, -8V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2m Ω @ 30A, 8V |
| Vgs(th) (Max) @ Id |
1.6V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4280pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 4.5V |
| Rise Time |
18ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
32A |
| Element Configuration |
Single |
| Threshold Voltage |
1.2V |
| Gate to Source Voltage (Vgs) |
10V |
| Pulsed Drain Current-Max (IDM) |
200A |
| DS Breakdown Voltage-Min |
30V |
| Height |
1.05mm |
| Length |
5mm |
| Width |
6mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Power Dissipation |
3.2W |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD17312Q5
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Pin Count |
8 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
38A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta |
| Turn Off Delay Time |
35 ns |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
CSD17312 |
| Contact Plating |
Gold |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
1.1V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5m Ω @ 35A, 8V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5240pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 4.5V |
| Rise Time |
27ns |
| Vgs (Max) |
+10V, -8V |
| Fall Time (Typ) |
23 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
10V |
| Drain-source On Resistance-Max |
0.0024Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
200A |
| Height |
1.05mm |
| Length |
5mm |
| Width |
6mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
3.2W |
| Lead Free |
Contains Lead |