Showing 13501–13512 of 15245 results
Texas Instruments CSD17313Q2
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Number of Terminations |
6 |
| Mounting Type |
Surface Mount |
| Package / Case |
6-WDFN Exposed Pad |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Turn On Delay Time |
2.8 ns |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
CSD17313 |
| Pin Count |
8 |
| Number of Elements |
1 |
| Power Dissipation-Max |
2.3W Ta |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.3W |
| Case Connection |
DRAIN |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Threshold Voltage |
1.3V |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
1.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
340pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
5A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
2.7nC @ 4.5V |
| Rise Time |
3.9ns |
| Drive Voltage (Max Rds On,Min Rds On) |
3V 8V |
| Vgs (Max) |
+10V, -8V |
| Fall Time (Typ) |
1.3 ns |
| Turn-Off Delay Time |
4.2 ns |
| Continuous Drain Current (ID) |
5A |
| Gate to Source Voltage (Vgs) |
10V |
| Drain Current-Max (Abs) (ID) |
5A |
| FET Type |
N-Channel |
| Drain-source On Resistance-Max |
0.042Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
20A |
| Height |
800μm |
| Length |
2mm |
| Width |
2mm |
| Thickness |
750μm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
30m Ω @ 4A, 8V |
| Lead Free |
Lead Free |
Texas Instruments CSD17313Q2T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
6-WDFN Exposed Pad |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 8V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.4W Ta 17W Tc |
| Element Configuration |
Single |
| Factory Lead Time |
6 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Base Part Number |
CSD17313 |
| Operating Temperature |
-55°C~150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain-source On Resistance-Max |
0.042Ohm |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
30m Ω @ 4A, 8V |
| Vgs(th) (Max) @ Id |
1.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
340pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
2.7nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
+10V, -8V |
| Continuous Drain Current (ID) |
5A |
| Threshold Voltage |
1.3V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Pulsed Drain Current-Max (IDM) |
57A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
18 mJ |
| Feedback Cap-Max (Crss) |
17 pF |
| Length |
2mm |
| Width |
2mm |
| Thickness |
750μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Texas Instruments CSD17318Q2T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
6-WDFN Exposed Pad |
| Surface Mount |
YES |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 8V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
16W Tc |
| Series |
NexFET™ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±10V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15.1m Ω @ 8A, 8V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
879pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
6nC @ 4.5V |
| Base Part Number |
CSD17318 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain Current-Max (Abs) (ID) |
10A |
| Drain-source On Resistance-Max |
0.03Ohm |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
7.7 mJ |
| Feedback Cap-Max (Crss) |
51 pF |
| Length |
2mm |
| Width |
2mm |
| Thickness |
750μm |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD17382F4
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Terminal Form |
NO LEAD |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 8V |
| Number of Elements |
1 |
| Turn Off Delay Time |
279 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
500mW Ta |
| Packaging |
Tape & Reel (TR) |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
347pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
2.7nC @ 4.5V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500mW |
| Case Connection |
DRAIN |
| Turn On Delay Time |
59 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
64m Ω @ 500mA, 8V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Number of Channels |
1 |
| Base Part Number |
CSD17382 |
| Drain to Source Voltage (Vdss) |
30V |
| Continuous Drain Current (ID) |
2.3A |
| Gate to Source Voltage (Vgs) |
10V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
350μm |
| Length |
1.035mm |
| Width |
635μm |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Texas Instruments CSD17483F4
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
10.6 ns |
| Series |
NexFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Rise Time |
1.3ns |
| Fall Time (Typ) |
3.4 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
3.3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 500mA, 8V |
| Vgs(th) (Max) @ Id |
1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
190pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
1.3nC @ 4.5V |
| Number of Channels |
1 |
| Base Part Number |
CSD17483 |
| Continuous Drain Current (ID) |
1.5A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain-source On Resistance-Max |
0.55Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
5A |
| Height |
350μm |
| Length |
1.035mm |
| Width |
635μm |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Texas Instruments CSD17483F4T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Turn Off Delay Time |
10.6 ns |
| Base Part Number |
CSD17483 |
| Rise Time |
1.3ns |
| Fall Time (Typ) |
3.4 ns |
| Power Dissipation |
500mW |
| Case Connection |
DRAIN |
| Turn On Delay Time |
3.3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 500mA, 8V |
| Vgs(th) (Max) @ Id |
1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
190pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
1.3nC @ 4.5V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
1.5A |
| Threshold Voltage |
850mV |
| Gate to Source Voltage (Vgs) |
12V |
| Drain-source On Resistance-Max |
0.55Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Height |
350μm |
| Length |
1.035mm |
| Width |
635μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Texas Instruments CSD17551Q5A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
48A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta |
| Base Part Number |
CSD17551 |
| Factory Lead Time |
12 Weeks |
| Packaging |
Cut Tape (CT) |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Turn Off Delay Time |
11.9 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.3 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9.1 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.8m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1272pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
7.2nC @ 4.5V |
| Rise Time |
15.5ns |
| Drain to Source Voltage (Vdss) |
30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3W |
| Continuous Drain Current (ID) |
48A |
| Threshold Voltage |
1.7V |
| Gate to Source Voltage (Vgs) |
20V |
| DS Breakdown Voltage-Min |
30V |
| Feedback Cap-Max (Crss) |
24 pF |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD17552Q3A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Base Part Number |
CSD17552 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta 60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.6W Ta |
| Turn Off Delay Time |
11 ns |
| Packaging |
Cut Tape (CT) |
| Series |
NexFET™ |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Contact Plating |
Tin |
| Factory Lead Time |
6 Weeks |
| Fall Time (Typ) |
3.4 ns |
| Continuous Drain Current (ID) |
60A |
| Power Dissipation |
2.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2050pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 4.5V |
| Rise Time |
7.4ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Pin Count |
8 |
| Threshold Voltage |
1.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Avalanche Energy Rating (Eas) |
45 mJ |
| Feedback Cap-Max (Crss) |
36 pF |
| Height |
900μm |
| Length |
3.3mm |
| Width |
3.3mm |
| Thickness |
800μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Texas Instruments CSD17555Q5A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Cut Tape (CT) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3W Ta |
| Turn Off Delay Time |
20 ns |
| Base Part Number |
CSD17555 |
| Contact Plating |
Tin |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.3 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.7m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4650pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
28nC @ 4.5V |
| Rise Time |
18ns |
| Drain to Source Voltage (Vdss) |
30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3W |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
24A |
| Drain-source On Resistance-Max |
0.0034Ohm |
| DS Breakdown Voltage-Min |
30V |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD17559Q5
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Series |
NexFET™ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta 96W Tc |
| Turn Off Delay Time |
32 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
CSD17559 |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Continuous Drain Current (ID) |
100A |
| Power Dissipation |
3.2W |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.15m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
1.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9200pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
51nC @ 4.5V |
| Rise Time |
41ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
14 ns |
| Threshold Voltage |
1.4V |
| Gate to Source Voltage (Vgs) |
20V |
| Operating Mode |
ENHANCEMENT MODE |
| Drain Current-Max (Abs) (ID) |
40A |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Height |
1.05mm |
| Length |
5mm |
| Width |
6mm |
| Thickness |
1mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Contains Lead |
Texas Instruments CSD17570Q5B
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Gold |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta |
| Turn Off Delay Time |
144 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
8 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
44 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
0.69m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13600pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
121nC @ 4.5V |
| Rise Time |
36ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
CSD17570 |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
53A |
| Drain-source On Resistance-Max |
0.00092Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
360A |
| Avalanche Energy Rating (Eas) |
450 mJ |
| Length |
5mm |
| Width |
6mm |
| Thickness |
950μm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD17570Q5BT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Gold |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta |
| Turn Off Delay Time |
144 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
6 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
0.69m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13600pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
121nC @ 4.5V |
| Rise Time |
36ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
CSD17570 |
| Fall Time (Typ) |
44 ns |
| Continuous Drain Current (ID) |
53A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.00092Ohm |
| Pulsed Drain Current-Max (IDM) |
360A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
450 mJ |
| Length |
5mm |
| Width |
6mm |
| Thickness |
950μm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |