Showing 13513–13524 of 15245 results
Texas Instruments CSD17571Q2
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
6-WDFN Exposed Pad |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta |
| Turn Off Delay Time |
8 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
NexFET™ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Contact Plating |
Tin |
| Factory Lead Time |
6 Weeks |
| Rise Time |
19ns |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5.3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
29m Ω @ 5A, 4.5V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
468pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
3.1nC @ 4.5V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
26 ns |
| Base Part Number |
CSD17571 |
| Continuous Drain Current (ID) |
22A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.029Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
39A |
| Avalanche Energy Rating (Eas) |
7.2 mJ |
| Length |
2mm |
| Width |
2mm |
| Thickness |
750μm |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Texas Instruments CSD17578Q5A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Series |
NexFET™ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 42W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
16 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
25A |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.9m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1510pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
22.3nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
CSD17578 |
| Drain Current-Max (Abs) (ID) |
16A |
| Drain-source On Resistance-Max |
0.0093Ohm |
| Pulsed Drain Current-Max (IDM) |
132A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
23 mJ |
| Feedback Cap-Max (Crss) |
75 pF |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD17579Q3AT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta 29W Tc |
| Turn Off Delay Time |
11 ns |
| Base Part Number |
CSD17579 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Contact Plating |
Tin |
| Factory Lead Time |
6 Weeks |
| Fall Time (Typ) |
1 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10.2m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
1.9V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
998pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
20A |
| Gate to Source Voltage (Vgs) |
20V |
| Element Configuration |
Single |
| Drain Current-Max (Abs) (ID) |
11A |
| Drain-source On Resistance-Max |
0.0142Ohm |
| Pulsed Drain Current-Max (IDM) |
106A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
14 mJ |
| Feedback Cap-Max (Crss) |
49 pF |
| Length |
3.3mm |
| Width |
3.3mm |
| Thickness |
800μm |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Texas Instruments CSD17579Q5A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 36W Tc |
| Turn Off Delay Time |
13 ns |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Contact Plating |
Tin |
| Factory Lead Time |
6 Weeks |
| Fall Time (Typ) |
1 ns |
| Continuous Drain Current (ID) |
25A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.7m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1030pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
15.1nC @ 10V |
| Rise Time |
7ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Base Part Number |
CSD17579 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
14A |
| Drain-source On Resistance-Max |
0.0133Ohm |
| Pulsed Drain Current-Max (IDM) |
105A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
14.5 mJ |
| Feedback Cap-Max (Crss) |
52 pF |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Contains Lead |
Texas Instruments CSD17579Q5AT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 36W Tc |
| Turn Off Delay Time |
13 ns |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Contact Plating |
Copper, Tin |
| Factory Lead Time |
8 Weeks |
| Fall Time (Typ) |
1 ns |
| Continuous Drain Current (ID) |
25A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.7m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1030pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
15.1nC @ 10V |
| Rise Time |
7ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Base Part Number |
CSD17579 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
14A |
| Drain-source On Resistance-Max |
0.0133Ohm |
| Pulsed Drain Current-Max (IDM) |
105A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
14.5 mJ |
| Feedback Cap-Max (Crss) |
52 pF |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Contains Lead |
Texas Instruments CSD17581Q3A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 63W Tc |
| Terminal Position |
DUAL |
| Factory Lead Time |
6 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
FLAT |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
21A |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.8m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
1.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3640pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
54nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Base Part Number |
CSD17581 |
| Element Configuration |
Single |
| Drain-source On Resistance-Max |
0.0047Ohm |
| Pulsed Drain Current-Max (IDM) |
154A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
76 mJ |
| Feedback Cap-Max (Crss) |
195 pF |
| Length |
3.3mm |
| Width |
3.3mm |
| Thickness |
800μm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Texas Instruments CSD17581Q5A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Ta 123A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 83W Tc |
| Terminal Form |
NO LEAD |
| Factory Lead Time |
6 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~155°C TJ |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
123A |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
1.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3640pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
54nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Base Part Number |
CSD17581 |
| Element Configuration |
Single |
| Drain Current-Max (Abs) (ID) |
24A |
| Drain-source On Resistance-Max |
0.0042Ohm |
| Pulsed Drain Current-Max (IDM) |
256A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
76 mJ |
| Feedback Cap-Max (Crss) |
195 pF |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD17585F5
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Number of Terminations |
3 |
| Package / Case |
3-SMD, No Lead |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.9A Ta |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
5.1nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
27m Ω @ 900mA, 10V |
| Vgs(th) (Max) @ Id |
1.7V @ 250μA |
| Terminal Position |
BOTTOM |
| ECCN Code |
EAR99 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
20V |
| Feedback Cap-Max (Crss) |
7.4 pF |
| Length |
1.49mm |
| Width |
730μm |
| Thickness |
338μm |
| Base Part Number |
CSD17585 |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD17585F5T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Number of Terminations |
3 |
| Package / Case |
3-SMD, No Lead |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.9A Ta |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
5.1nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
27m Ω @ 900mA, 10V |
| Vgs(th) (Max) @ Id |
1.7V @ 250μA |
| Terminal Position |
BOTTOM |
| ECCN Code |
EAR99 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
20V |
| Feedback Cap-Max (Crss) |
7.4 pF |
| Length |
1.49mm |
| Width |
730μm |
| Thickness |
338μm |
| Base Part Number |
CSD17585 |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD18502Q5BT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta 156W Tc |
| Terminal Form |
NO LEAD |
| Factory Lead Time |
8 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Gate Charge (Qg) (Max) @ Vgs |
33nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
40V |
| Base Part Number |
CSD18502 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.3m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5070pF @ 20V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
26A |
| Drain-source On Resistance-Max |
0.0033Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
40V |
| Feedback Cap-Max (Crss) |
27 pF |
| Length |
5mm |
| Width |
6mm |
| Thickness |
950μm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD18503Q5AT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Copper, Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 120W Tc |
| Turn Off Delay Time |
15 ns |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
12 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
2.6 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.3m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2640pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 4.5V |
| Rise Time |
8.8ns |
| Drain to Source Voltage (Vdss) |
40V |
| Base Part Number |
CSD18503 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
19A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0062Ohm |
| Pulsed Drain Current-Max (IDM) |
321A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
157 mJ |
| Feedback Cap-Max (Crss) |
16 pF |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD18504KCS
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
53A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
115W Tc |
| Turn Off Delay Time |
11.2 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Base Part Number |
CSD18504 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
6 Weeks |
| Continuous Drain Current (ID) |
85A |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
5.2ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.2 ns |
| Threshold Voltage |
1.9V |
| Gate to Source Voltage (Vgs) |
20V |
| Power Dissipation |
93W |
| Drain to Source Breakdown Voltage |
40V |
| Avalanche Energy Rating (Eas) |
88 mJ |
| Height |
4.7mm |
| Length |
10.16mm |
| Width |
8.7mm |
| Thickness |
4.58mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
4.4 ns |
| Lead Free |
Lead Free |