Showing 13525–13536 of 15245 results
Texas Instruments CSD18510KTT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Series |
NexFET™ |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
274A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Ta |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
12 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
2 (1 Year) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.7m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11400pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
153nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
CSD18510 |
| Drain Current-Max (Abs) (ID) |
200A |
| Drain-source On Resistance-Max |
0.0026Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
40V |
| Feedback Cap-Max (Crss) |
551 pF |
| Height |
4.83mm |
| Length |
10.18mm |
| Width |
8.41mm |
| Thickness |
4.44mm |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD18511KCS
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Reach Compliance Code |
not_compliant |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
194A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
188W Ta |
| Packaging |
Tube |
| Series |
NexFET™ |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Factory Lead Time |
6 Weeks |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.6m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5940pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
64nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Base Part Number |
CSD18511 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain Current-Max (Abs) (ID) |
110A |
| Drain-source On Resistance-Max |
0.0042Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
156 mJ |
| Height |
4.7mm |
| Length |
10.16mm |
| Width |
8.7mm |
| Thickness |
4.58mm |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD18511KTT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Series |
NexFET™ |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
194A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
188W Ta |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
12 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
2 (1 Year) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.6m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5940pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
64nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
CSD18511 |
| Drain Current-Max (Abs) (ID) |
110A |
| Drain-source On Resistance-Max |
0.0042Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
156 mJ |
| Height |
4.83mm |
| Length |
10.18mm |
| Width |
8.41mm |
| Thickness |
4.44mm |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD18511Q5A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
159A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
104W Tc |
| Terminal Form |
NO LEAD |
| Factory Lead Time |
16 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Base Part Number |
CSD18511 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5m Ω @ 24A, 4.5V |
| Vgs(th) (Max) @ Id |
2.45V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5850pF @ 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
27A |
| Drain-source On Resistance-Max |
0.0035Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
157 mJ |
| Feedback Cap-Max (Crss) |
309 pF |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD18512Q5B
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
211A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Factory Lead Time |
6 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Power Dissipation (Max) |
139W Tc |
| Terminal Form |
NO LEAD |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7120pF @ 20V |
| Reach Compliance Code |
not_compliant |
| Base Part Number |
CSD18512 |
| Drain Current-Max (Abs) (ID) |
32A |
| Drain-source On Resistance-Max |
0.0023Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
205 mJ |
| Feedback Cap-Max (Crss) |
333 pF |
| Length |
5mm |
| Width |
6mm |
| Thickness |
950μm |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD18513Q5A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
124A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
96W Tc |
| Terminal Form |
NO LEAD |
| Factory Lead Time |
16 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Gate Charge (Qg) (Max) @ Vgs |
61nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Base Part Number |
CSD18513 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.3m Ω @ 19A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4280pF @ 20V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
22A |
| Drain-source On Resistance-Max |
0.0053Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
106 mJ |
| Feedback Cap-Max (Crss) |
231 pF |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD18514Q5AT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
89A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
74W Tc |
| Terminal Form |
NO LEAD |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2683pF @ 20V |
| Reach Compliance Code |
not_compliant |
| Base Part Number |
CSD18514 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.9m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.0079Ohm |
| Pulsed Drain Current-Max (IDM) |
237A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
55 mJ |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD18532NQ5B
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Base Part Number |
CSD18532 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.2W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
20 ns |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
260 |
| Contact Plating |
Tin |
| Factory Lead Time |
6 Weeks |
| Fall Time (Typ) |
2.7 ns |
| Continuous Drain Current (ID) |
100A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
3.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5340pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
64nC @ 10V |
| Rise Time |
8.7ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
22A |
| Drain-source On Resistance-Max |
0.0044Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Avalanche Energy Rating (Eas) |
360 mJ |
| Length |
5mm |
| Width |
6mm |
| Thickness |
950μm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
3.2W |
| Lead Free |
Contains Lead |
Texas Instruments CSD18532NQ5BT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Power Dissipation (Max) |
3.1W Ta 156W Tc |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-VSON-CLIP (5×6) |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Base Part Number |
CSD18532 |
| Factory Lead Time |
6 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Element Configuration |
Single |
| Threshold Voltage |
2.8V |
| Input Capacitance |
5.34nF |
| Vgs(th) (Max) @ Id |
3.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5340pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
64nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.4mOhm @ 25A, 10V |
| Drain to Source Resistance |
2.7mOhm |
| Rds On Max |
3.4 mΩ |
| Length |
5mm |
| Width |
6mm |
| Thickness |
950μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD18533KCS
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
72A Ta 100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
192W Tc |
| Turn Off Delay Time |
13 ns |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
CSD18533 |
| Contact Plating |
Tin |
| Factory Lead Time |
6 Weeks |
| Fall Time (Typ) |
3.2 ns |
| Power Dissipation |
160W |
| Turn On Delay Time |
5.7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.3m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3025pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Rise Time |
4.8ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
1.9V |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.009Ohm |
| DS Breakdown Voltage-Min |
60V |
| Nominal Vgs |
1.9 V |
| Height |
4.7mm |
| Length |
10.16mm |
| Width |
8.7mm |
| Thickness |
4.58mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Texas Instruments CSD18536KTTT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200A Ta 349A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Base Part Number |
CSD18536 |
| Factory Lead Time |
6 Weeks |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
2 (1 Year) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Series |
NexFET™ |
| Element Configuration |
Single |
| Drain Current-Max (Abs) (ID) |
200A |
| Drain-source On Resistance-Max |
0.0022Ohm |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11430pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
349A |
| Threshold Voltage |
1.8V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
819 mJ |
| Feedback Cap-Max (Crss) |
51 pF |
| Height |
4.83mm |
| Length |
10.18mm |
| Width |
8.41mm |
| Thickness |
4.44mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD18540Q5B
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Series |
NexFET™ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 195W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| Factory Lead Time |
6 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| HTS Code |
8541.29.00.95 |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
NO LEAD |
| Vgs(th) (Max) @ Id |
2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4230pF @ 30V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
CSD18540 |
| JESD-30 Code |
R-PDSO-N8 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.2m Ω @ 28A, 10V |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
53nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
28A |
| Drain-source On Resistance-Max |
0.0033Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
320 mJ |
| Feedback Cap-Max (Crss) |
20 pF |
| RoHS Status |
ROHS3 Compliant |