Showing 13537–13548 of 15245 results
Texas Instruments CSD18541F5
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Terminal Position |
BOTTOM |
| Mounting Type |
Surface Mount |
| Package / Case |
3-SMD, No Lead |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
500mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Elements |
1 |
| Packaging |
Tape & Reel (TR) |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
2.2A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
777pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Element Configuration |
Single |
| Base Part Number |
CSD18541 |
| Drain-source On Resistance-Max |
0.075Ohm |
| DS Breakdown Voltage-Min |
60V |
| Feedback Cap-Max (Crss) |
10.5 pF |
| Length |
1.49mm |
| Width |
730μm |
| Thickness |
338μm |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Texas Instruments CSD18541F5T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Power Dissipation (Max) |
500mW Ta |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-SMD, No Lead |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Base Part Number |
CSD18541 |
| Factory Lead Time |
6 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
BOTTOM |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
2.2A |
| Threshold Voltage |
1.75V |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
777pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Drain-source On Resistance-Max |
0.075Ohm |
| DS Breakdown Voltage-Min |
60V |
| Feedback Cap-Max (Crss) |
10.5 pF |
| Length |
1.49mm |
| Width |
730μm |
| Thickness |
338μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Texas Instruments CSD18542KCS
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tray |
| Contact Plating |
Copper, Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
200A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
200W Tc |
| Turn Off Delay Time |
18 ns |
| Element Configuration |
Single |
| Factory Lead Time |
6 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Reach Compliance Code |
not_compliant |
| Base Part Number |
CSD18542 |
| Operating Temperature |
-55°C~175°C TJ |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
170A |
| Rds On (Max) @ Id, Vgs |
44m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5070pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
57nC @ 10V |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
200A |
| Turn On Delay Time |
6 ns |
| FET Type |
N-Channel |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
281 mJ |
| Feedback Cap-Max (Crss) |
14 pF |
| Height |
4.7mm |
| Length |
10.16mm |
| Width |
8.7mm |
| Thickness |
4.58mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD18543Q3AT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta 60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
66W Tc |
| Terminal Form |
FLAT |
| Factory Lead Time |
6 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
8 ns |
| Base Part Number |
CSD18543 |
| Gate Charge (Qg) (Max) @ Vgs |
14.5nC @ 10V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
15.6m Ω @ 12A, 4.5V |
| Vgs(th) (Max) @ Id |
2.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1150pF @ 30V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Avalanche Energy Rating (Eas) |
55 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Feedback Cap-Max (Crss) |
6.2 pF |
| Height |
900μm |
| Length |
3.3mm |
| Width |
3.3mm |
| Thickness |
800μm |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD18563Q5A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Number of Terminations |
5 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Power Dissipation |
3.2W |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
CSD18563 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
3.2W Ta 116W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Contact Plating |
Tin |
| Factory Lead Time |
8 Weeks |
| Continuous Drain Current (ID) |
15A |
| Turn On Delay Time |
3.2 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.8m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C |
100A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
6.3ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
1.7 ns |
| Turn-Off Delay Time |
11.4 ns |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Case Connection |
DRAIN |
| Drain Current-Max (Abs) (ID) |
93A |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
96A |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
2 V |
| Height |
1.1mm |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Contains Lead |
Texas Instruments CSD19505KCS
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
150A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Turn Off Delay Time |
62 ns |
| Base Part Number |
CSD19505 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
31 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.8m Ω @ 100A, 6V |
| Vgs(th) (Max) @ Id |
3.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7820pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
76nC @ 10V |
| Rise Time |
16ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
150A |
| Threshold Voltage |
2.6V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
80V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Height |
4.7mm |
| Length |
10.16mm |
| Width |
8.7mm |
| Thickness |
4.58mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Texas Instruments CSD19531KCS
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Base Part Number |
CSD19531 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
214W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
16 ns |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Contact Plating |
Tin |
| Factory Lead Time |
6 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.1 ns |
| Power Dissipation |
179W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.7m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
3.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3870pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Rise Time |
7.2ns |
| Drain to Source Voltage (Vdss) |
100V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
105A |
| Threshold Voltage |
2.7V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0088Ohm |
| Pulsed Drain Current-Max (IDM) |
285A |
| Height |
4.7mm |
| Length |
10.16mm |
| Width |
8.7mm |
| Thickness |
4.58mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Texas Instruments CSD19531Q5AT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.3W Ta 125W Tc |
| Turn Off Delay Time |
18.4 ns |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
8 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.2 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.4m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
3.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3870pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Rise Time |
5.8ns |
| Base Part Number |
CSD19531 |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
100A |
| Threshold Voltage |
2.7V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
337A |
| Height |
1.1mm |
| Length |
4.9mm |
| Width |
6mm |
| Thickness |
1mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD19532Q5BT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Series |
NexFET™ |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.1W Ta 195W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Drain to Source Voltage (Vdss) |
100V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.9m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
3.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4810pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
62nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| Reach Compliance Code |
not_compliant |
| Drain Current-Max (Abs) (ID) |
17A |
| Drain-source On Resistance-Max |
0.0057Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
274 mJ |
| Length |
5mm |
| Width |
6mm |
| Thickness |
950μm |
| RoHS Status |
ROHS3 Compliant |
| Base Part Number |
CSD19532 |
| Lead Free |
Contains Lead |
Texas Instruments CSD19533KCS
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
188W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Turn Off Delay Time |
12 ns |
| Packaging |
Tube |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Contact Plating |
Tin |
| Factory Lead Time |
6 Weeks |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10.5m Ω @ 55A, 10V |
| Vgs(th) (Max) @ Id |
3.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2670pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
5ns |
| Fall Time (Typ) |
2 ns |
| Continuous Drain Current (ID) |
100A |
| Base Part Number |
CSD19533 |
| Threshold Voltage |
2.8V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
207A |
| Height |
4.7mm |
| Length |
10.16mm |
| Width |
8.7mm |
| Thickness |
4.58mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Texas Instruments CSD19535KTTT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
21 ns |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
2 (1 Year) |
| Number of Terminations |
2 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Reach Compliance Code |
not_compliant |
| Base Part Number |
CSD19535 |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
15 ns |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7930pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
98nC @ 10V |
| Rise Time |
18ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
200A |
| Gate to Source Voltage (Vgs) |
20V |
| Operating Mode |
ENHANCEMENT MODE |
| Drain-source On Resistance-Max |
0.0041Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
451 mJ |
| Height |
4.83mm |
| Length |
10.18mm |
| Width |
8.41mm |
| Thickness |
4.44mm |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
9 ns |
| Lead Free |
Contains Lead |
Texas Instruments CSD19536KTTT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Turn Off Delay Time |
32 ns |
| Base Part Number |
CSD19536 |
| Factory Lead Time |
6 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
2 (1 Year) |
| Number of Terminations |
2 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
200A |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
3.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
12000pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
153nC @ 10V |
| Rise Time |
8ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0028Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
806 mJ |
| Feedback Cap-Max (Crss) |
61 pF |
| Height |
4.83mm |
| Length |
10.18mm |
| Width |
8.41mm |
| Thickness |
4.44mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |