Showing 13549–13560 of 15245 results
Texas Instruments CSD19537Q3
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Copper, Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 83W Tc |
| Turn Off Delay Time |
10 ns |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
6 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
CSD19537 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
14.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
3.6V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1680pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Rise Time |
3ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
9.7A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Avalanche Energy Rating (Eas) |
55 mJ |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| Length |
3.3mm |
| Width |
3.3mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Texas Instruments CSD19538Q2
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
6-WDFN Exposed Pad |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14.4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Power Dissipation (Max) |
2.5W Ta 20.2W Tc |
| Terminal Form |
NO LEAD |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
59m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
454pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
5.6nC @ 10V |
| Base Part Number |
CSD19538 |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
14.4A |
| Drain-source On Resistance-Max |
0.072Ohm |
| Pulsed Drain Current-Max (IDM) |
34.4A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
8 mJ |
| Length |
2mm |
| Width |
2mm |
| Thickness |
750μm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Texas Instruments CSD19538Q3A
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 23W Tc |
| Terminal Form |
FLAT |
| Factory Lead Time |
16 Weeks |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
59m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
454pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
4.3nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
CSD19538 |
| Continuous Drain Current (ID) |
15A |
| Drain Current-Max (Abs) (ID) |
4.9A |
| Drain-source On Resistance-Max |
0.072Ohm |
| Pulsed Drain Current-Max (IDM) |
37A |
| DS Breakdown Voltage-Min |
100V |
| Feedback Cap-Max (Crss) |
16.4 pF |
| Length |
3.3mm |
| Width |
3.3mm |
| Thickness |
800μm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Texas Instruments CSD22206WT
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Terminal Position |
BOTTOM |
| Package / Case |
9-UFBGA, DSBGA |
| Surface Mount |
YES |
| Number of Pins |
9 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
1.7W Ta |
| Series |
NexFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
9 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
14.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
8V |
| Base Part Number |
CSD22206 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.7m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id |
1.05V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2275pF @ 4V |
| Peak Reflow Temperature (Cel) |
260 |
| Terminal Form |
BALL |
| Vgs (Max) |
-6V |
| Drain Current-Max (Abs) (ID) |
5A |
| Pulsed Drain Current-Max (IDM) |
108A |
| DS Breakdown Voltage-Min |
8V |
| Feedback Cap-Max (Crss) |
440 pF |
| Height |
625μm |
| Length |
1.75mm |
| Width |
1.75mm |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Texas Instruments CSD23203W
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
6-UFBGA, DSBGA |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
750mW Ta |
| Terminal Form |
BALL |
| Turn Off Delay Time |
58 ns |
| Packaging |
Tape & Reel (TR) |
| Series |
NexFET™ |
| JESD-609 Code |
e1 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Position |
BOTTOM |
| Contact Plating |
Copper, Silver, Tin |
| Factory Lead Time |
6 Weeks |
| Drain to Source Voltage (Vdss) |
8V |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
14 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
19.4m Ω @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id |
1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
914pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs |
6.3nC @ 4.5V |
| Rise Time |
12ns |
| Fall Time (Typ) |
27 ns |
| Continuous Drain Current (ID) |
3A |
| Base Part Number |
CSD23203 |
| Gate to Source Voltage (Vgs) |
-6V |
| Drain Current-Max (Abs) (ID) |
3A |
| Drain-source On Resistance-Max |
0.053Ohm |
| Drain to Source Breakdown Voltage |
-8V |
| Height |
1mm |
| Length |
1.5mm |
| Width |
1.8mm |
| Thickness |
2mm |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Texas Instruments CSD23280F3
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
3-SMD, No Lead |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Base Part Number |
CSD23280 |
| Power Dissipation (Max) |
500mW Ta |
| Packaging |
Tape & Reel (TR) |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Vgs (Max) |
-6V |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
116m Ω @ 400mA, 4.5V |
| Vgs(th) (Max) @ Id |
0.95V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
234pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
1.23nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
12V |
| Continuous Drain Current (ID) |
1.8A |
| Drain-source On Resistance-Max |
0.25Ohm |
| Element Configuration |
Single |
| Pulsed Drain Current-Max (IDM) |
11.4A |
| DS Breakdown Voltage-Min |
12V |
| Feedback Cap-Max (Crss) |
11.1 pF |
| Length |
690μm |
| Width |
600μm |
| Thickness |
345μm |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
Texas Instruments CSD23280F3T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-SMD, No Lead |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
6 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
BOTTOM |
| Base Part Number |
CSD23280 |
| Power Dissipation (Max) |
500mW Ta |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
-650mV |
| Drain-source On Resistance-Max |
0.25Ohm |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
116m Ω @ 400mA, 4.5V |
| Vgs(th) (Max) @ Id |
0.95V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
234pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
1.23nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
12V |
| Vgs (Max) |
-6V |
| Continuous Drain Current (ID) |
1.8A |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Pulsed Drain Current-Max (IDM) |
11.4A |
| DS Breakdown Voltage-Min |
12V |
| Feedback Cap-Max (Crss) |
11.1 pF |
| Length |
690μm |
| Width |
600μm |
| Thickness |
345μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Texas Instruments CSD23285F5T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Package / Case |
3-SMD, No Lead |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Power Dissipation (Max) |
500mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Number of Elements |
1 |
| Packaging |
Tape & Reel (TR) |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
BOTTOM |
| Mount |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Drain to Source Voltage (Vdss) |
12V |
| Vgs (Max) |
-6V |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id |
950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
628pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
4.2nC @ 4.5V |
| Base Part Number |
CSD23285 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Continuous Drain Current (ID) |
5.4A |
| DS Breakdown Voltage-Min |
12V |
| Feedback Cap-Max (Crss) |
48 pF |
| Length |
1.49mm |
| Width |
730μm |
| Thickness |
338μm |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Texas Instruments CSD23381F4T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
6 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Terminal Position |
BOTTOM |
| Terminal Form |
NO LEAD |
| Turn Off Delay Time |
18 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
3.9ns |
| Drain to Source Voltage (Vdss) |
12V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
4.5 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
175m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
236pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
1.14nC @ 6V |
| Base Part Number |
CSD23381 |
| Number of Channels |
1 |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
2.3A |
| Threshold Voltage |
-950mV |
| Gate to Source Voltage (Vgs) |
-8V |
| Drain to Source Breakdown Voltage |
-12V |
| Height |
350μm |
| Length |
1.035mm |
| Width |
635μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Texas Instruments CSD23382F4T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
6 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
BOTTOM |
| Terminal Form |
NO LEAD |
| Turn Off Delay Time |
66 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
12V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
28 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
76m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
235pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
1.35nC @ 4.5V |
| Base Part Number |
CSD23382 |
| Number of Channels |
1 |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
41 ns |
| Continuous Drain Current (ID) |
-3.5A |
| Threshold Voltage |
-800mV |
| Gate to Source Voltage (Vgs) |
-800mV |
| Length |
1.035mm |
| Width |
635μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Texas Instruments CSD25404Q3T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Terminal Form |
NO LEAD |
| Package / Case |
8-PowerVDFN |
| Surface Mount |
YES |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
104A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
2.8W Ta 96W Tc |
| Series |
NexFET™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
SOURCE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 10A, 4.5V |
| Vgs(th) (Max) @ Id |
1.15V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2120pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
14.1nC @ 4.5V |
| Base Part Number |
CSD25404 |
| Reach Compliance Code |
not_compliant |
| Continuous Drain Current (ID) |
104A |
| Drain-source On Resistance-Max |
0.0121Ohm |
| Pulsed Drain Current-Max (IDM) |
240A |
| DS Breakdown Voltage-Min |
20V |
| Length |
3.3mm |
| Width |
3.3mm |
| Thickness |
1mm |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Contains Lead |
Texas Instruments CSD25483F4T
In stock
| Manufacturer |
Texas Instruments |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-XFDFN |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
500mW Ta |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
6 Weeks |
| Packaging |
Tape & Reel (TR) |
| Series |
FemtoFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Terminal Position |
BOTTOM |
| Terminal Form |
NO LEAD |
| Turn Off Delay Time |
17.4 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
3.7ns |
| Drain to Source Voltage (Vdss) |
20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
4.3 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
205m Ω @ 500mA, 8V |
| Vgs(th) (Max) @ Id |
1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
198pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
0.96nC @ 4.5V |
| Base Part Number |
CSD25483 |
| Number of Channels |
1 |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
1.6A |
| Threshold Voltage |
-950mV |
| Gate to Source Voltage (Vgs) |
-12V |
| DS Breakdown Voltage-Min |
20V |
| Height |
350μm |
| Length |
1.035mm |
| Width |
635μm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |