Showing 13561–13572 of 15245 results
Filter by price
Filter by manufacturer
Series
Discrete Semiconductors
Texas Instruments CSD25485F5T
In stock
Manufacturer |
Texas Instruments |
---|---|
Power Dissipation (Max) |
1.4W Ta |
Mounting Type |
Surface Mount |
Package / Case |
3-SMD, No Lead |
Surface Mount |
YES |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
5.3A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 8V |
Terminal Position |
BOTTOM |
Factory Lead Time |
6 Weeks |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
FemtoFET™ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Number of Elements |
1 |
Peak Reflow Temperature (Cel) |
260 |
Gate Charge (Qg) (Max) @ Vgs |
3.5nC @ 4.5V |
Drain to Source Voltage (Vdss) |
20V |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
35m Ω @ 900mA, 8V |
Vgs(th) (Max) @ Id |
1.3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
533pF @ 10V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
CSD25485 |
Vgs (Max) |
-12V |
Drain-source On Resistance-Max |
0.07Ohm |
DS Breakdown Voltage-Min |
20V |
Length |
1.49mm |
Width |
730μm |
Thickness |
338μm |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Texas Instruments CSD25501F3T
In stock
Manufacturer |
Texas Instruments |
---|---|
Power Dissipation (Max) |
500mW Ta |
Mounting Type |
Surface Mount |
Package / Case |
3-XFLGA |
Surface Mount |
YES |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
3.6A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
Terminal Position |
BOTTOM |
Factory Lead Time |
20 Weeks |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
FemtoFET™ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Number of Elements |
1 |
Terminal Form |
NO LEAD |
Input Capacitance (Ciss) (Max) @ Vds |
385pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
1.33nC @ 4.5V |
Base Part Number |
CSD25501 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
76m Ω @ 400mA, 4.5V |
Vgs(th) (Max) @ Id |
1.05V @ 250μA |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
-20V |
Drain-source On Resistance-Max |
0.125Ohm |
DS Breakdown Voltage-Min |
20V |
Length |
690μm |
Width |
600μm |
Thickness |
200μm |
RoHS Status |
ROHS3 Compliant |
Texas Instruments JFE150DBVR
In stock
Manufacturer |
Texas Instruments |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
SC-74A, SOT-753 |
Base Product Number |
JFE150 |
Mfr |
Texas Instruments |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Drain (Idss) @ Vds (Vgs=0) |
24 mA @ 10 V |
Voltage - Cutoff (VGS off) @ Id |
1.5 V @ 100 nA |
Voltage - Breakdown (V(BR)GSS) |
40 V |
Current Drain (Id) - Max |
50 mA |
Texas Instruments JFE150DBVT
In stock
Manufacturer |
Texas Instruments |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
SC-74A, SOT-753 |
Mounting Style |
SMD/SMT |
Base Product Number |
JFE150 |
Gate-Source Cutoff Voltage |
– 1.2 V |
Id - Continuous Drain Current |
50 mA |
Maximum Operating Temperature |
+ 125 C |
Mfr |
Texas Instruments |
Minimum Operating Temperature |
– 40 C |
Package |
Bulk |
Product Status |
Active |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Technology |
Si |
Configuration |
Single |
Drain to Source Voltage (Vdss) |
40 V |
Current - Drain (Idss) @ Vds (Vgs=0) |
24 mA @ 10 V |
Voltage - Cutoff (VGS off) @ Id |
1.5 V @ 100 nA |
Voltage - Breakdown (V(BR)GSS) |
40 V |
Current Drain (Id) - Max |
50 mA |
Texas Instruments JFE150DCKR
In stock
Manufacturer |
Texas Instruments |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package |
SC-70-5 |
Mounting Style |
SMD/SMT |
Brand |
Texas Instruments |
Maximum Operating Temperature |
+ 125 C |
Mfr |
Texas Instruments |
Minimum Operating Temperature |
– 40 C |
Package |
Digi-Reel? |
Product Status |
Active |
Transistor Polarity |
N-Channel |
Operating Temperature |
-40°C ~ 125°C (TA) |
Packaging |
Cut Tape |
Subcategory |
Transistors |
Technology |
Si |
Configuration |
Single |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
24pF @ 5V |
Drain to Source Voltage (Vdss) |
40 V |
Product Type |
JFETs |
Current - Drain (Idss) @ Vds (Vgs=0) |
24 mA @ 10 V |
Voltage - Breakdown (V(BR)GSS) |
40 V |
Current Drain (Id) - Max |
50 mA |
Product Category |
JFET |
Texas Instruments JFE150DCKT
In stock
Manufacturer |
Texas Instruments |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package |
SC-70-5 |
Mounting Style |
SMD/SMT |
Brand |
Texas Instruments |
Maximum Operating Temperature |
+ 125 C |
Mfr |
Texas Instruments |
Minimum Operating Temperature |
– 40 C |
Package |
Digi-Reel? |
Product Status |
Active |
Transistor Polarity |
N-Channel |
Operating Temperature |
-40°C ~ 125°C (TJ) |
Packaging |
Cut Tape |
Subcategory |
Transistors |
Technology |
Si |
Configuration |
Single |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
24pF @ 5V |
Drain to Source Voltage (Vdss) |
40 V |
Product Type |
JFETs |
Current - Drain (Idss) @ Vds (Vgs=0) |
24 mA @ 10 V |
Voltage - Breakdown (V(BR)GSS) |
40 V |
Current Drain (Id) - Max |
50 mA |
Product Category |
JFET |
Texas Instruments JFE2140DR
In stock
Manufacturer |
Texas Instruments |
---|---|
Transistor Polarity |
N-Channel |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SOIC |
Mounting Style |
SMD/SMT |
Brand |
Texas Instruments |
Maximum Operating Temperature |
+ 125 C |
Mfr |
Texas Instruments |
Minimum Operating Temperature |
– 40 C |
Package |
Digi-Reel? |
Product Status |
Active |
Mounting Type |
Surface Mount |
Packaging |
Reel |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Subcategory |
Transistors |
Technology |
Si |
Configuration |
Dual |
FET Type |
2 N-Channel (Dual) |
Input Capacitance (Ciss) (Max) @ Vds |
13pF @ 5V |
Drain to Source Voltage (Vdss) |
40 V |
Product Type |
JFETs |
Voltage - Breakdown (V(BR)GSS) |
40 V |
Current Drain (Id) - Max |
50 mA |
Product Category |
JFET |
Texas Instruments TPS1100DR
In stock
Manufacturer |
Texas Instruments |
---|---|
Operating Temperature |
-40°C~150°C TJ |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
1.6A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.7V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
791mW Ta |
Base Part Number |
TPS1100 |
Turn Off Delay Time |
13 ns |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e4 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Contact Plating |
Gold |
Factory Lead Time |
6 Weeks |
Fall Time (Typ) |
10 ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Power Dissipation |
791mW |
Turn On Delay Time |
4.5 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
180m Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id |
1.5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
5.45nC @ 10V |
Rise Time |
10ns |
Vgs (Max) |
+2V, -15V |
Continuous Drain Current (ID) |
1.6A |
JEDEC-95 Code |
MS-012AA |
Pin Count |
8 |
Gate to Source Voltage (Vgs) |
2V |
Drain-source On Resistance-Max |
0.4Ohm |
Drain to Source Breakdown Voltage |
15V |
Height |
1.75mm |
Length |
4.9mm |
Width |
3.91mm |
Thickness |
1.58mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Operating Mode |
ENHANCEMENT MODE |
Lead Free |
Lead Free |
Texas Instruments TPS1100PWR
In stock
Manufacturer |
Texas Instruments |
---|---|
Current Rating |
-1.27mA |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-TSSOP (0.173, 4.40mm Width) |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
1.27A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.7V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
504mW Ta |
Operating Temperature |
-40°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Turn Off Delay Time |
13 ns |
JESD-609 Code |
e4 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
-15V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Contact Plating |
Gold |
Factory Lead Time |
16 Weeks |
Vgs (Max) |
+2V, -15V |
Fall Time (Typ) |
10 ns |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
504mW |
Turn On Delay Time |
4.5 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
180m Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id |
1.5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
5.45nC @ 10V |
Rise Time |
10ns |
Drain to Source Voltage (Vdss) |
15V |
Pin Count |
8 |
Base Part Number |
TPS1100 |
Continuous Drain Current (ID) |
1.27A |
Gate to Source Voltage (Vgs) |
2V |
Drain-source On Resistance-Max |
0.4Ohm |
Drain to Source Breakdown Voltage |
-15V |
Height |
1.2mm |
Length |
3mm |
Width |
4.4mm |
Thickness |
1mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Lead Free |
Lead Free |
Texas Instruments TPS1101D
In stock
Manufacturer |
Texas Instruments |
---|---|
JESD-609 Code |
e4 |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
2.3A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.7V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
791mW Ta |
Turn Off Delay Time |
19 ns |
Operating Temperature |
-40°C~150°C TJ |
Pin Count |
8 |
Packaging |
Tube |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
-15V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
-2.3A |
Base Part Number |
TPS1101 |
Mount |
Surface Mount |
Factory Lead Time |
6 Weeks |
Vgs (Max) |
+2V, -15V |
Element Configuration |
Single |
Power Dissipation |
791mW |
Output Current |
2.3A |
Case Connection |
ISOLATED |
Turn On Delay Time |
6.5 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
90m Ω @ 2.5A, 10V |
Vgs(th) (Max) @ Id |
1.5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs |
11.25nC @ 10V |
Rise Time |
5.5ns |
Fall Time (Typ) |
5.5 ns |
Continuous Drain Current (ID) |
-2.3A |
Output Voltage |
-15V |
Gate to Source Voltage (Vgs) |
2V |
Drain to Source Breakdown Voltage |
15V |
Nominal Vgs |
-1.25 V |
Height |
1.75mm |
Length |
4.9mm |
Width |
3.91mm |
Thickness |
1.58mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Operating Mode |
ENHANCEMENT MODE |
Lead Free |
Lead Free |
Texas Instruments UC2610N
In stock
Manufacturer |
Texas Instruments |
---|---|
Pbfree Code |
yes |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
8-DIP (0.300, 7.62mm) |
Number of Pins |
8 |
Weight |
528.605208mg |
Diode Element Material |
SILICON |
Operating Temperature |
-25°C~125°C TA |
Packaging |
Tube |
Pin Count |
8 |
Factory Lead Time |
6 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Capacitance |
70pF |
Voltage - Rated DC |
50V |
Current Rating |
1A |
Base Part Number |
UC2610 |
JESD-609 Code |
e4 |
Number of Elements |
2 |
Peak Reverse Current |
10μA |
Max Repetitive Reverse Voltage (Vrrm) |
50V |
Diode Type |
Single Phase |
Current - Reverse Leakage @ Vr |
100μA @ 40V |
Output Current |
1A |
Voltage - Forward (Vf) (Max) @ If |
1.3V @ 1A |
Forward Current |
1A |
Forward Voltage |
1.3V |
Number of Phases |
1 |
Reverse Recovery Time |
15 ns |
Power Dissipation-Max |
1W |
Element Configuration |
Dual |
JEDEC-95 Code |
MS-001BA |
Reverse Test Voltage |
40V |
Height |
5.08mm |
Length |
9.81mm |
Width |
6.35mm |
Thickness |
3.9mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Torex Semiconductor Ltd XP152A12C0MR-G
In stock
Manufacturer |
Torex Semiconductor Ltd |
---|---|
Part Status |
Active |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Current - Continuous Drain (Id) @ 25℃ |
700mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
Power Dissipation (Max) |
500mW Ta |
Operating Temperature |
150°C TA |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Factory Lead Time |
10 Weeks |
Configuration |
Single |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Operating Mode |
ENHANCEMENT MODE |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
300m Ω @ 400mA, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
180pF @ 10V |
Drain to Source Voltage (Vdss) |
20V |
Vgs (Max) |
±12V |
Continuous Drain Current (ID) |
700mA |
Drain Current-Max (Abs) (ID) |
0.7A |
RoHS Status |
ROHS3 Compliant |