Manufacturer	Toshiba Semiconductor and Storage
Power Dissipation (Max)	20W Tc
Termination	SMD/SMT
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Part Status	Active
Series	U-MOSIII
Published	2010
Packaging	Tape & Reel (TR)
Power Dissipation	20W
Operating Temperature	150°C
Number of Elements	1
Drive Voltage (Max Rds On, Min Rds On)	4V 10V
Current - Continuous Drain (Id) @ 25℃	5A Ta
Number of Pins	3
Mounting Type	Surface Mount
Mount	Surface Mount
Factory Lead Time	24 Weeks
Rds On (Max) @ Id, Vgs	170m Ω @ 2.5A, 10V
Threshold Voltage	2V
RoHS Status	RoHS Compliant
REACH SVHC	Unknown
Radiation Hardening	No
Nominal Vgs	2 V
Dual Supply Voltage	60V
Gate to Source Voltage (Vgs)	20V
Continuous Drain Current (ID)	5A
FET Type	P-Channel
Fall Time (Typ)	14 ns
Vgs (Max)	±20V
Rise Time	14ns
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Lead Free	Lead Free

Manufacturer	Toshiba Semiconductor and Storage
Operating Temperature	150°C TJ
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Current - Continuous Drain (Id) @ 25℃	4A Ta
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation	100W
Mount	Through Hole
Packaging	Tube
Published	1998
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Lead Pitch	2.54mm
Power Dissipation (Max)	100W Tc
FET Type	N-Channel
Gate to Source Voltage (Vgs)	20V
Dual Supply Voltage	1kV
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Drain to Source Voltage (Vdss)	1000V
Vgs (Max)	±20V
Continuous Drain Current (ID)	4A
Threshold Voltage	3.5V
Rds On (Max) @ Id, Vgs	3.8 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Nominal Vgs	3.5 V
Height	9mm
Length	10.3mm
Width	4.7mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

Manufacturer	Toshiba Semiconductor and Storage
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Number of Pins	3
Supplier Device Package	SSM
Current - Continuous Drain (Id) @ 25℃	100mA Ta
Drive Voltage (Max Rds On, Min Rds On)	2.5V
Number of Elements	1
Power Dissipation (Max)	100mW Ta
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Power Dissipation	100mW
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12Ohm @ 10mA, 2.5V
Input Capacitance (Ciss) (Max) @ Vds	8.5pF @ 3V
Drain to Source Voltage (Vdss)	20V
Vgs (Max)	10V
Continuous Drain Current (ID)	100mA
Gate to Source Voltage (Vgs)	10V
Input Capacitance	8.5pF
Rds On Max	12 Ω
Radiation Hardening	No
RoHS Status	RoHS Compliant

Manufacturer	Toshiba Semiconductor and Storage
Factory Lead Time	52 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Supplier Device Package	SC-59
Operating Temperature	125°C TJ
Packaging	Cut Tape (CT)
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	125°C
Min Operating Temperature	-55°C
Max Power Dissipation	100mW
Element Configuration	Single
Power - Max	100mW
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8.2pF @ 10V
Continuous Drain Current (ID)	6.5mA
Input Capacitance	8.2pF
Current - Drain (Idss) @ Vds (Vgs=0)	2.6mA @ 10V
Voltage - Cutoff (VGS off) @ Id	400mV @ 100nA
Voltage - Breakdown (V(BR)GSS)	50V
Current Drain (Id) - Max	6.5mA
Radiation Hardening	No
RoHS Status	RoHS Compliant

Discrete Semiconductors