Showing 13621–13632 of 15245 results
Toshiba Semiconductor and Storage 2SK3132(Q)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3PL |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
50A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Turn Off Delay Time |
65 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
1999 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Power Dissipation |
250W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
95m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
3.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
11000pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
280nC @ 10V |
| Rise Time |
160ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
245 ns |
| Continuous Drain Current (ID) |
50A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Toshiba Semiconductor and Storage 2SK3320-BL(TE85L,F
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
52 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
5-TSSOP, SC-70-5, SOT-353 |
| Number of Pins |
5 |
| Operating Temperature |
125°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
200mW |
| Reach Compliance Code |
unknown |
| Element Configuration |
Dual |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
13pF @ 10V |
| Drain to Source Voltage (Vdss) |
10V |
| Continuous Drain Current (ID) |
14mA |
| Gate to Source Voltage (Vgs) |
-30V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
6mA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
200mV @ 100nA |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK3320-Y(TE85L,F)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
5-TSSOP, SC-70-5, SOT-353 |
| Supplier Device Package |
USV |
| Packaging |
Cut Tape (CT) |
| Published |
2014 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
200mW |
| Power - Max |
200mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
13pF @ 10V |
| Input Capacitance |
13pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
1.2mA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
200mV @ 100nA |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK3564(STA4,Q,M)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Current - Continuous Drain (Id) @ 25℃ |
3A Ta |
| Power Dissipation (Max) |
40W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2008 |
| Series |
π-MOSIV |
| Part Status |
Active |
| Contact Plating |
Copper, Silver, Tin |
| Factory Lead Time |
12 Weeks |
| Drain to Source Voltage (Vdss) |
900V |
| Vgs (Max) |
±30V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.3Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Rise Time |
20ns |
| Min Operating Temperature |
-55°C |
| Max Operating Temperature |
150°C |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
3A |
| Gate to Source Voltage (Vgs) |
30V |
| Input Capacitance |
700pF |
| Rds On Max |
4.3 Ω |
| Radiation Hardening |
No |
| Power Dissipation |
40W |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK3662(F)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220NIS |
| Current - Continuous Drain (Id) @ 25℃ |
35A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Power Dissipation (Max) |
35W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Bulk |
| Published |
2009 |
| Series |
U-MOSIII |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
12.5mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
5120pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
91nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
35A |
| Input Capacitance |
5.12nF |
| Rds On Max |
12.5 mΩ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Toshiba Semiconductor and Storage 2SK3700(F)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Power Dissipation |
150W |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
5A Ta |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Bulk |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Factory Lead Time |
16 Weeks |
| Rds On (Max) @ Id, Vgs |
2.5 Ω @ 3A, 10V |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1150pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
28nC @ 10V |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
900V |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
5A |
| Gate to Source Voltage (Vgs) |
30V |
| Height |
19mm |
| Length |
15.9mm |
| Width |
4.8mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Toshiba Semiconductor and Storage 2SK4017(Q)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Power Dissipation (Max) |
20W Tc |
| Contact Plating |
Silver, Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Power Dissipation |
20W |
| Factory Lead Time |
52 Weeks |
| Operating Temperature |
150°C TJ |
| Packaging |
Bulk |
| Published |
2009 |
| Series |
U-MOSIII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Number of Elements |
1 |
| FET Type |
N-Channel |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance (Ciss) (Max) @ Vds |
730pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4 ns |
| Continuous Drain Current (ID) |
5A |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Nominal Vgs |
2.5 V |
| Height |
5.5mm |
| Length |
6.5mm |
| Width |
2.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Toshiba Semiconductor and Storage 2SK880-BL(TE85L,F)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-70, SOT-323 |
| Weight |
28.009329mg |
| Operating Temperature |
125°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2009 |
| Pbfree Code |
yes |
| Factory Lead Time |
52 Weeks |
| Max Power Dissipation |
100mW |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
13pF @ 10V |
| Drain to Source Voltage (Vdss) |
10V |
| Continuous Drain Current (ID) |
500μA |
| Gate to Source Voltage (Vgs) |
-50V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
6mA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
1.5V @ 100nA |
| Voltage - Breakdown (V(BR)GSS) |
50V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK880GRTE85LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-70, SOT-323 |
| Number of Pins |
3 |
| Operating Temperature |
125°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2009 |
| Part Status |
Active |
| Factory Lead Time |
52 Weeks |
| Element Configuration |
Single |
| Max Power Dissipation |
100mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
13pF @ 10V |
| Continuous Drain Current (ID) |
6.5mA |
| Gate to Source Voltage (Vgs) |
-1.5V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
2.6mA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
1.5V @ 100nA |
| Voltage - Breakdown (V(BR)GSS) |
50V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |