Manufacturer	Toshiba Semiconductor and Storage
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	TO-220SM
Collector-Emitter Breakdown Voltage	600V
Current-Collector (Ic) (Max)	10A
Test Conditions	300V, 10A, 100Ohm, 15V
Operating Temperature	150°C TJ
Packaging	Tube
Published	2007
Part Status	Obsolete
Mount	Surface Mount
Base Part Number	GT10
Max Power Dissipation	60W
Input Type	Standard
Power - Max	60W
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	10A
Reverse Recovery Time	200 ns
Voltage - Collector Emitter Breakdown (Max)	600V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Current - Collector Pulsed (Icm)	20A
Td (on/off) @ 25°C	400ns/400ns
RoHS Status	RoHS Compliant
Lead Free	Lead Free

Manufacturer	Toshiba
Pin Count	3 +Tab
Surface Mount	NO
Supplier Device Package	TO-220SIS
Mounting Style	Through Hole
Brand	Toshiba
Collector Current (DC)	20(A)
Gate to Emitter Voltage (Max)	±25(V)
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	– 55 C
Operating Temperature Classification	Military
Package	Tube
Mounting	Through Hole
Package Type	TO-220SIS
Product Status	Active
Rad Hardened	No
Operating Temperature	150°C (TJ)
Packaging	Magazine
ECCN Code	EAR99
Subcategory	IGBTs
Technology	Si
Reach Compliance Code	unknown
Package / Case	TO-220-3 Full Pack
Mounting Type	Through Hole
Power Dissipation-Max (Abs)	45 W
Test Condition	300V, 20A, 33Ohm, 15V
Power Dissipation	45
Input Type	Standard
Power - Max	45 W
Polarity/Channel Type	N-CHANNEL
Product Type	IGBT Transistors
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	20 A
Collector Emitter Saturation Voltage	1.5
Channel Type	N
Operating Temperature (Min)	-55C
Operating Temperature (Max)	150C
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 20A
Collector Current-Max (IC)	20 A
Continuous Collector Current	20

Manufacturer	Toshiba
Subcategory	IGBTs
Package / Case	TO-247-3
Supplier Device Package	TO-247
Mounting Style	Through Hole
Brand	Toshiba
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	– 55 C
Package	Tube
Product Status	Active
Operating Temperature	175°C (TJ)
Packaging	Tube
Mounting Type	Through Hole
Configuration	Single
Technology	Si
Input Type	Standard
Power - Max	312 W
Product Type	IGBT Transistors
Voltage - Collector Emitter Breakdown (Max)	1350 V
Current - Collector (Ic) (Max)	40 A
Test Condition	300V, 40A, 39Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Gate Charge	185 nC
Current - Collector Pulsed (Icm)	80 A
Switching Energy	-, 700μJ (off)
Product Category	IGBT Transistors

Manufacturer	Toshiba Semiconductor and Storage
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Collector-Emitter Breakdown Voltage	600V
Test Conditions	300V, 30A, 24 Ω, 15V
Packaging	Tube
Published	2006
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	170W
Element Configuration	Single
Input Type	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	30A
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 30A
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	90ns/300ns
Switching Energy	1mJ (on), 800μJ (off)
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

Discrete Semiconductors