Showing 13645–13656 of 15245 results
Toshiba Semiconductor and Storage SSM3J112TU,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Package / Case |
3-SMD, Flat Lead |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
800mW Ta |
| Operating Temperature |
150°C |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Factory Lead Time |
12 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-F3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
390m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
86pF @ 15V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
1.1A |
| Drain-source On Resistance-Max |
0.79Ohm |
| DS Breakdown Voltage-Min |
30V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3J328R,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Power Dissipation (Max) |
1W Ta |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-3 Flat Leads |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4.5V |
| Terminal Position |
DUAL |
| Factory Lead Time |
16 Weeks |
| Turn Off Delay Time |
107 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Digi-Reel® |
| Published |
2009 |
| Series |
U-MOSVI |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Gate Charge (Qg) (Max) @ Vgs |
12.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Power Dissipation |
2W |
| Turn On Delay Time |
32 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
29.8m Ω @ 3A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
840pF @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±8V |
| Continuous Drain Current (ID) |
6A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain-source On Resistance-Max |
0.0298Ohm |
| Drain to Source Breakdown Voltage |
-20V |
| Pulsed Drain Current-Max (IDM) |
24A |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3J332R,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Turn Off Delay Time |
75 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-3 Flat Leads |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 10V |
| Number of Elements |
1 |
| Reach Compliance Code |
unknown |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
U-MOSVI |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
DUAL |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Power Dissipation (Max) |
1W Ta |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
8.2nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1W |
| Turn On Delay Time |
15 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
42m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
1.2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
560pF @ 15V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
-6A |
| Threshold Voltage |
-500mV |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain-source On Resistance-Max |
0.042Ohm |
| Drain to Source Breakdown Voltage |
-22V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
880μm |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3J358R,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Published |
2017 |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-3 Flat Leads |
| Supplier Device Package |
SOT-23F |
| Current - Continuous Drain (Id) @ 25℃ |
6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 8V |
| Power Dissipation (Max) |
1W Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Factory Lead Time |
12 Weeks |
| Part Status |
Active |
| Series |
U-MOSVII |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
22.1mOhm @ 6A, 8V |
| Vgs(th) (Max) @ Id |
1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1331pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
38.5nC @ 8V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±10V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3J35CTC,L3F
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-1123 |
| Current - Continuous Drain (Id) @ 25℃ |
250mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.2V 4.5V |
| Power Dissipation (Max) |
500mW Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
U-MOSVII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Reach Compliance Code |
unknown |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 150mA, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
42pF @ 10V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±10V |
| Continuous Drain Current (ID) |
250mA |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3K15AMFV,L3F
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-723 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4V |
| Power Dissipation (Max) |
150mW Ta |
| Operating Temperature |
150°C TJ |
| Number of Elements |
1 |
| Packaging |
Cut Tape (CT) |
| Published |
2014 |
| Series |
U-MOSIII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
1.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13.5pF @ 3V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-F3 |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.6 Ω @ 10mA, 4V |
| Terminal Form |
FLAT |
| Terminal Position |
DUAL |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100mA |
| Drain Current-Max (Abs) (ID) |
0.1A |
| Drain-source On Resistance-Max |
6Ohm |
| DS Breakdown Voltage-Min |
30V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3K15CT(TPL3)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-101, SOT-883 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
100mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4V |
| Power Dissipation (Max) |
100mW Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Series |
π-MOSVI |
| Part Status |
Not For New Designs |
| Mount |
Surface Mount |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Power Dissipation |
100mW |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4 Ω @ 10mA, 4V |
| Vgs(th) (Max) @ Id |
1.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7.8pF @ 3V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.1A |
| Drain to Source Breakdown Voltage |
30V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3K17SU,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-70, SOT-323 |
| Current - Continuous Drain (Id) @ 25℃ |
100mA Ta |
| Power Dissipation (Max) |
150mW Ta |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Mount |
Surface Mount |
| FET Type |
N-Channel |
| Power Dissipation |
150mW |
| Rds On (Max) @ Id, Vgs |
20 Ω @ 10mA, 4V |
| Vgs(th) (Max) @ Id |
1.5V @ 1μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 3V |
| Continuous Drain Current (ID) |
100mA |
| Gate to Source Voltage (Vgs) |
7V |
| Drain to Source Breakdown Voltage |
50V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3K310T(TE85L,F)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V 4V |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
36 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2014 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Reach Compliance Code |
unknown |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 4A, 4V |
| Input Capacitance (Ciss) (Max) @ Vds |
1120pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
14.8nC @ 4V |
| Vgs (Max) |
±10V |
| Continuous Drain Current (ID) |
5A |
| Gate to Source Voltage (Vgs) |
1V |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain to Source Breakdown Voltage |
20V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3K318R,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-3 Flat Leads |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1W Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
U-MOSIV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
107m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
2.8V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
235pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
7nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
2.5A |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3K339R,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Series |
U-MOSVII-H |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-3 Flat Leads |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 8V |
| Power Dissipation (Max) |
1W Ta |
| Turn Off Delay Time |
8 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Factory Lead Time |
12 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Reach Compliance Code |
unknown |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
185m Ω @ 1A, 8V |
| Vgs(th) (Max) @ Id |
1.2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
130pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
1.1nC @ 4.2V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
2A |
| Gate to Source Voltage (Vgs) |
12V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3K35AMFV,L3F
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Published |
2017 |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-723 |
| Supplier Device Package |
VESM |
| Current - Continuous Drain (Id) @ 25℃ |
250mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.2V 4.5V |
| Power Dissipation (Max) |
500mW Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Factory Lead Time |
12 Weeks |
| Part Status |
Active |
| Series |
U-MOSIII |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.1Ohm @ 150mA, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
36pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
0.34nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±10V |
| RoHS Status |
RoHS Compliant |