Showing 13657–13668 of 15245 results
Toshiba Semiconductor and Storage SSM3K35CTC,L3F
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-101, SOT-883 |
| Current - Continuous Drain (Id) @ 25℃ |
250mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.2V 4.5V |
| Power Dissipation (Max) |
500mW Ta |
| Turn Off Delay Time |
6.5 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
U-MOSIII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Channels |
1 |
| Power Dissipation |
500mW |
| Turn On Delay Time |
2 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.1 Ω @ 150mA, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
36pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
0.34nC @ 4.5V |
| Vgs (Max) |
±10V |
| Continuous Drain Current (ID) |
250mA |
| Gate to Source Voltage (Vgs) |
10V |
| Drain to Source Breakdown Voltage |
20V |
| Height |
400μm |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3K361R,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-3 Flat Leads |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Operating Temperature |
175°C |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
1.2W Ta |
| Published |
2016 |
| Series |
U-MOSVIII-H |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
3.2nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
100V |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
69m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
430pF @ 15V |
| Reference Standard |
AEC-Q101 |
| Reach Compliance Code |
unknown |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
3.5A |
| Drain-source On Resistance-Max |
0.069Ohm |
| Pulsed Drain Current-Max (IDM) |
14A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
9.1 mJ |
| JESD-30 Code |
R-PDSO-F3 |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3K7002BSU,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-70, SOT-323 |
| Supplier Device Package |
USM |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
150mW Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.1Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
3.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
17pF @ 25V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
200mA |
| Input Capacitance |
17pF |
| Rds On Max |
2.1 Ω |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM3K7002KFU,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-70, SOT-323 |
| Current - Continuous Drain (Id) @ 25℃ |
400mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
150mW Ta |
| Operating Temperature |
150°C |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
U-MOSVII-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
40pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
0.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM6J206FE(TE85L,F
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Number of Pins |
6 |
| Current - Continuous Drain (Id) @ 25℃ |
2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4V |
| Power Dissipation (Max) |
500mW Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Power Dissipation |
500mW |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 1A, 4V |
| Vgs(th) (Max) @ Id |
1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
335pF @ 10V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| Continuous Drain Current (ID) |
2A |
| Gate to Source Voltage (Vgs) |
8V |
| Drain Current-Max (Abs) (ID) |
2A |
| Drain to Source Breakdown Voltage |
-20V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM6J207FE,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Series |
U-MOSII |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Number of Pins |
6 |
| Current - Continuous Drain (Id) @ 25℃ |
1.4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Power Dissipation (Max) |
500mW Ta |
| Turn Off Delay Time |
14 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Factory Lead Time |
12 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Number of Channels |
1 |
| Turn On Delay Time |
15 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
251m Ω @ 650mA, 10V |
| Vgs(th) (Max) @ Id |
2.6V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
137pF @ 15V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
1.4A |
| Gate to Source Voltage (Vgs) |
20V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM6J505NU,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Power Dissipation (Max) |
1.25W Ta |
| Mounting Type |
Surface Mount |
| Package / Case |
6-WDFN Exposed Pad |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.2V 4.5V |
| Terminal Position |
DUAL |
| Number of Elements |
1 |
| Operating Temperature |
150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2014 |
| Series |
U-MOSVI |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Vgs(th) (Max) @ Id |
1V @ 1mA |
| Reach Compliance Code |
unknown |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.25W |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 4A, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
37.6nC @ 4.5V |
| Terminal Form |
NO LEAD |
| Drain to Source Voltage (Vdss) |
12V |
| Vgs (Max) |
±6V |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
6V |
| Drain to Source Breakdown Voltage |
-12V |
| Pulsed Drain Current-Max (IDM) |
30A |
| Element Configuration |
Single |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM6J51TUTE85LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
6-SMD, Flat Leads |
| Current - Continuous Drain (Id) @ 25℃ |
4A Ta |
| Power Dissipation (Max) |
500mW Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2009 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
54m Ω @ 2A, 2.5V |
| Vgs(th) (Max) @ Id |
1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1700pF @ 10V |
| Drain to Source Voltage (Vdss) |
12V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM6K202FE,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Number of Pins |
6 |
| Current - Continuous Drain (Id) @ 25℃ |
2.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4V |
| Power Dissipation (Max) |
500mW Ta |
| Turn Off Delay Time |
31 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Channels |
1 |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
85m Ω @ 1.5A, 4V |
| Vgs(th) (Max) @ Id |
1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
270pF @ 10V |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
2.3A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
30V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage SSM6K217FE,LF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Number of Pins |
6 |
| Supplier Device Package |
ES6 |
| Current - Continuous Drain (Id) @ 25℃ |
1.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 8V |
| Power Dissipation (Max) |
500mW Ta |
| Turn Off Delay Time |
8 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Series |
U-MOSVII-H |
| Factory Lead Time |
12 Weeks |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Min Operating Temperature |
-55°C |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
195mOhm @ 1A, 8V |
| Vgs(th) (Max) @ Id |
1.2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
130pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
1.1nC @ 4.2V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
1.8A |
| Gate to Source Voltage (Vgs) |
12V |
| Input Capacitance |
130pF |
| Rds On Max |
195 mΩ |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage T2N7002BK,LM
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Series |
U-MOSVII-H |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Current - Continuous Drain (Id) @ 25℃ |
400mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
320mW Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Factory Lead Time |
12 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Reach Compliance Code |
unknown |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
40pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
0.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
400mA |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TJ30S06M3L(T6L1,NQ
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
68W Tc |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Temperature |
175°C TJ |
| Published |
2009 |
| Series |
U-MOSVI |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Reference Standard |
AEC-Q101 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Drain to Source Voltage (Vdss) |
60V |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
21.8m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3950pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Rise Time |
43ns |
| Vgs (Max) |
+10V, -20V |
| Fall Time (Typ) |
118 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
10V |
| Drain-source On Resistance-Max |
0.028Ohm |
| Pulsed Drain Current-Max (IDM) |
60A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
71 mJ |
| Radiation Hardening |
No |
| Case Connection |
DRAIN |
| RoHS Status |
RoHS Compliant |