Showing 1357–1368 of 15245 results
Fairchild PN4118
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
350 mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
80 µA @ 10 V |
| Voltage - Cutoff (VGS off) @ Id |
1 V @ 1 nA |
| Voltage - Breakdown (V(BR)GSS) |
40 V |
Fairchild PN5432
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
350 mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 10V (VGS) |
| Current - Drain (Idss) @ Vds (Vgs=0) |
150 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
4 V @ 3 nA |
| Voltage - Breakdown (V(BR)GSS) |
25 V |
| Resistance - RDS(On) |
5 Ohms |
Fairchild RFP45N06
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Fairchild Semiconductor |
| Package |
Tube |
| Power Dissipation (Max) |
131W (Tc) |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
28mOhm @ 45A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
2050 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
45A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
150 nC @ 20 V |
| Drain to Source Voltage (Vdss) |
60 V |
| Vgs (Max) |
±20V |
Fairchild Semiconductor 2N5457_D26Z
In stock
| Manufacturer |
Fairchild Semiconductor |
|---|---|
| Mount |
Through Hole |
| Number of Pins |
3 |
| Voltage Rating (DC) |
25 V |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Max Power Dissipation |
625 mW |
| Current Rating |
10 mA |
| Element Configuration |
Single |
| Power Dissipation |
625 mW |
| Drain to Source Voltage (Vdss) |
25 V |
| Continuous Drain Current (ID) |
3 mA |
| Gate to Source Voltage (Vgs) |
-25 V |
| Input Capacitance |
7 pF |
| Lead Free |
Lead Free |
Fairchild Semiconductor 2N5459_D75Z
In stock
| Manufacturer |
Fairchild Semiconductor |
|---|---|
| Mount |
Through Hole |
| Number of Pins |
3 |
| Voltage Rating (DC) |
25 V |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Max Power Dissipation |
625 mW |
| Current Rating |
10 mA |
| Element Configuration |
Single |
| Power Dissipation |
625 mW |
| Drain to Source Voltage (Vdss) |
25 V |
| Continuous Drain Current (ID) |
10 mA |
| Gate to Source Voltage (Vgs) |
-25 V |
| Input Capacitance |
7 pF |
| Lead Free |
Lead Free |
Fairchild Semiconductor FDD5N50TM_WS
In stock
| Manufacturer |
Fairchild Semiconductor |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Surface Mount |
YES |
| Number of Terminals |
2 |
| Transistor Element Material |
SILICON |
| Package Shape |
RECTANGULAR |
| JESD-609 Code |
e3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Factory Lead Time |
4 Weeks |
| Number of Elements |
1 |
| Brand Name |
ON Semiconductor |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Transistor Application |
SWITCHING |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
4 A |
| Drain-source On Resistance-Max |
1.4 Ω |
| Pulsed Drain Current-Max (IDM) |
16 A |
| DS Breakdown Voltage-Min |
500 V |
| Avalanche Energy Rating (Eas) |
256 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
40 W |
Fairchild Semiconductor FGH30T65UPDT_F155
In stock
| Manufacturer |
Fairchild Semiconductor |
|---|---|
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Supplier Device Package |
TO-247-3 |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Package Shape |
RECTANGULAR |
| Brand Name |
ON Semiconductor |
| Product Status |
Active |
| JESD-609 Code |
e3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN |
| HTS Code |
8541.29.00.95 |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
compliant |
| JESD-30 Code |
R-PSFM-T3 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
1 Week |
| Test Condition |
400V, 30A, 8Ohm, 15V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Input Type |
Standard |
| Power - Max |
250 W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-247AB |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Current - Collector (Ic) (Max) |
60 A |
| Power Dissipation-Max (Abs) |
250 W |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 30A |
| Collector Current-Max (IC) |
60 A |
| Number of Elements |
1 |
| IGBT Type |
Trench Field Stop |
| Collector-Emitter Voltage-Max |
650 V |
| Gate Charge |
155 nC |
| Current - Collector Pulsed (Icm) |
90 A |
| Td (on/off) @ 25°C |
22ns/139ns |
| Switching Energy |
760µJ (on), 400µJ (off) |
| Gate-Emitter Voltage-Max |
20 V |
| Gate-Emitter Thr Voltage-Max |
7.5 V |
| Case Connection |
COLLECTOR |
| Reverse Recovery Time (trr) |
33 ns |
Fairchild Semiconductor FJX597JBTF
In stock
| Manufacturer |
Fairchild Semiconductor |
|---|---|
| Mount |
Surface Mount |
| Number of Pins |
3 |
| Voltage Rating (DC) |
20 V |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Max Power Dissipation |
100 mW |
| Current Rating |
1 mA |
| Element Configuration |
Single |
| Power Dissipation |
100 mW |
| Drain to Source Voltage (Vdss) |
20 V |
| Continuous Drain Current (ID) |
1 mA |
| Gate to Source Voltage (Vgs) |
-20 V |
| Input Capacitance |
3.5 pF |
| Lead Free |
Lead Free |