Showing 13669–13680 of 15245 results
Toshiba Semiconductor and Storage TK100E08N1,S1X
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Series |
U-MOSVIII-H |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
100A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
255W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Factory Lead Time |
12 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Capacitance |
9nF |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.2m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
9000pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Drain to Source Voltage (Vdss) |
80V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK10A60W5,S5VX
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Series |
DTMOSIV |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Supplier Device Package |
TO-220SIS |
| Current - Continuous Drain (Id) @ 25℃ |
9.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
30W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Factory Lead Time |
16 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
450mOhm @ 4.9A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
720pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
9.7A |
| Input Capacitance |
720pF |
| Rds On Max |
450 mΩ |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK10E60W,S1VX
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
9.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
100W Tc |
| Turn Off Delay Time |
75 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Series |
DTMOSIV |
| Part Status |
Active |
| Factory Lead Time |
16 Weeks |
| Power Dissipation |
100W |
| Element Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 4.9A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
700pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
22ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
5.5 ns |
| Continuous Drain Current (ID) |
9.7A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| FET Feature |
Super Junction |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK10P60W,RVQ
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Turn Off Delay Time |
75 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
DPAK |
| Current - Continuous Drain (Id) @ 25℃ |
9.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Min Operating Temperature |
-55°C |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
DTMOSIV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Power Dissipation (Max) |
80W Tc |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
5.5 ns |
| Rds On (Max) @ Id, Vgs |
430mOhm @ 4.9A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
700pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
22ns |
| Drain to Source Voltage (Vdss) |
600V |
| Power Dissipation |
80W |
| FET Type |
N-Channel |
| Continuous Drain Current (ID) |
9.7A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Input Capacitance |
700pF |
| FET Feature |
Super Junction |
| Drain to Source Resistance |
380mOhm |
| Rds On Max |
430 mΩ |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK10S04K3L(T6L1,NQ
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Max Operating Temperature |
175°C |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
DPAK+ |
| Current - Continuous Drain (Id) @ 25℃ |
10A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
25W Tc |
| Operating Temperature |
175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
U-MOSIV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
12 Weeks |
| FET Type |
N-Channel |
| Min Operating Temperature |
-55°C |
| Rds On (Max) @ Id, Vgs |
28mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
410pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 10V |
| Rise Time |
7ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4 ns |
| Continuous Drain Current (ID) |
10A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
410pF |
| Rds On Max |
28 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK11A55D(STA4,Q,M)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220SIS |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
45W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2009 |
| Series |
π-MOSVII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
630mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
22ns |
| Drain to Source Voltage (Vdss) |
550V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
11A |
| Gate to Source Voltage (Vgs) |
30V |
| Input Capacitance |
1.35nF |
| Rds On Max |
630 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK11A65W,S5X
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Min Operating Temperature |
-55°C |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220SIS |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
11.1A Ta |
| Power Dissipation (Max) |
35W Tc |
| Turn Off Delay Time |
85 ns |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
DTMOSIV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
5.5 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
390mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 450μA |
| Input Capacitance (Ciss) (Max) @ Vds |
890pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
23ns |
| Drain to Source Voltage (Vdss) |
650V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
11.1A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
650V |
| Input Capacitance |
890pF |
| Drain to Source Resistance |
330mOhm |
| Rds On Max |
390 mΩ |
| Radiation Hardening |
No |
| Turn On Delay Time |
45 ns |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK12A60D(STA4,Q,M)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220SIS |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
45W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2009 |
| Series |
π-MOSVII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
550mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Rise Time |
40ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
30V |
| Input Capacitance |
1.8nF |
| Rds On Max |
550 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK12A60U(Q,M)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Power Dissipation (Max) |
35W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220SIS |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta |
| Min Operating Temperature |
-55°C |
| Factory Lead Time |
12 Weeks |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2009 |
| Series |
DTMOSII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
8 ns |
| Rds On (Max) @ Id, Vgs |
400mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
720pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
600V |
| Power Dissipation |
35W |
| FET Type |
N-Channel |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Input Capacitance |
720pF |
| Drain to Source Resistance |
400mOhm |
| Rds On Max |
400 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK12E60W,S1VX
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
11.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
85 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
DTMOSIV |
| Part Status |
Active |
| Factory Lead Time |
16 Weeks |
| Power Dissipation |
110W |
| Element Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
300m Ω @ 5.8A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 600μA |
| Input Capacitance (Ciss) (Max) @ Vds |
890pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
23ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
5.5 ns |
| Continuous Drain Current (ID) |
11.5A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| FET Feature |
Super Junction |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK13A65U(STA4,Q,M)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Number of Elements |
1 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220SIS |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
12 Weeks |
| Power Dissipation (Max) |
40W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2009 |
| Series |
DTMOSII |
| Part Status |
Active |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Max Operating Temperature |
150°C |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
380mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
950pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Rise Time |
30ns |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
40W |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
30V |
| Input Capacitance |
950pF |
| Rds On Max |
380 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK13E25D,S1X(S
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
102W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2009 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
40ns |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
20V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |