Showing 13693–13704 of 15245 results
Toshiba Semiconductor and Storage TK31J60W5,S1VQ
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Operating Temperature |
150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Supplier Device Package |
TO-3P(N) |
| Current - Continuous Drain (Id) @ 25℃ |
30.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
230W Tc |
| Capacitance |
3nF |
| Turn Off Delay Time |
165 ns |
| Packaging |
Tube |
| Published |
2013 |
| Series |
DTMOSIV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Vgs (Max) |
±30V |
| Power Dissipation |
230W |
| Rds On (Max) @ Id, Vgs |
88mOhm @ 15.4A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 1.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3000pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs |
105nC @ 10V |
| Rise Time |
32ns |
| Drain to Source Voltage (Vdss) |
600V |
| Fall Time (Typ) |
8.5 ns |
| Continuous Drain Current (ID) |
30.8A |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Input Capacitance |
3nF |
| FET Feature |
Super Junction |
| Drain to Source Resistance |
73mOhm |
| Rds On Max |
88 mΩ |
| FET Type |
N-Channel |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK31N60W5,S1VF
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Part Status |
Active |
| Series |
DTMOSIV |
| Published |
2014 |
| Packaging |
Tube |
| Operating Temperature |
150°C TJ |
| Turn Off Delay Time |
165 ns |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation (Max) |
230W Tc |
| Current - Continuous Drain (Id) @ 25℃ |
30.8A Ta |
| Weight |
38.000013g |
| Number of Pins |
3 |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Number of Channels |
1 |
| Rise Time |
80ns |
| Radiation Hardening |
No |
| Drain to Source Breakdown Voltage |
600V |
| Gate to Source Voltage (Vgs) |
30V |
| Continuous Drain Current (ID) |
30.8A |
| Fall Time (Typ) |
8.5 ns |
| Vgs (Max) |
±30V |
| Gate Charge (Qg) (Max) @ Vgs |
105nC @ 10V |
| ECCN Code |
EAR99 |
| Input Capacitance (Ciss) (Max) @ Vds |
3000pF @ 300V |
| Vgs(th) (Max) @ Id |
4.5V @ 1.5mA |
| Rds On (Max) @ Id, Vgs |
99m Ω @ 15.4A, 10V |
| FET Type |
N-Channel |
| Turn On Delay Time |
120 ns |
| Element Configuration |
Single |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK31V60X,LQ
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| JESD-30 Code |
S-PSSO-N4 |
| Mounting Type |
Surface Mount |
| Package / Case |
4-VSFN Exposed Pad |
| Weight |
37.393021mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
130 ns |
| Operating Temperature |
150°C TJ |
| Power Dissipation (Max) |
240W Tc |
| Packaging |
Cut Tape (CT) |
| Published |
2014 |
| Series |
DTMOSIV-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Position |
SINGLE |
| Terminal Form |
NO LEAD |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Rise Time |
22ns |
| Drain to Source Voltage (Vdss) |
600V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
55 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
98m Ω @ 9.4A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1.5mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3000pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Number of Channels |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
30.8A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.098Ohm |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
338 mJ |
| FET Feature |
Super Junction |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK32E12N1,S1X
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
98W Tc |
| Turn Off Delay Time |
43 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
U-MOSVIII-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Power Dissipation |
98W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13.8m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 60V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Rise Time |
14ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
60A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
120V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK34A10N1,S4X
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Number of Channels |
1 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
34A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
35W Tc |
| Turn Off Delay Time |
50 ns |
| Number of Elements |
1 |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
U-MOSVIII-H |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
31 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.5m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Rise Time |
12ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
34A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain-source On Resistance-Max |
0.0095Ohm |
| Avalanche Energy Rating (Eas) |
64 mJ |
| Radiation Hardening |
No |
| Case Connection |
ISOLATED |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK35N65W,S1F
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Min Operating Temperature |
-55°C |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-247 |
| Weight |
38.000013g |
| Current - Continuous Drain (Id) @ 25℃ |
35A Ta |
| Power Dissipation (Max) |
270W Tc |
| Turn Off Delay Time |
150 ns |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
DTMOSIV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
8 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
80mOhm @ 17.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 2.1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4100pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
650V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
35A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
650V |
| Input Capacitance |
4.1nF |
| Drain to Source Resistance |
68mOhm |
| Rds On Max |
80 mΩ |
| Radiation Hardening |
No |
| Turn On Delay Time |
70 ns |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK40E10K3,S1X(S
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current - Continuous Drain (Id) @ 25℃ |
40A Ta |
| Number of Elements |
1 |
| Packaging |
Tube |
| Published |
2009 |
| Series |
U-MOSIV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
147W |
| Power Dissipation |
147W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
4000pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
84nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Continuous Drain Current (ID) |
40A |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK40P03M1(T6RDS-Q)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
DPAK |
| Current - Continuous Drain (Id) @ 25℃ |
40A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
U-MOSVI-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
33W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
10.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1150pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
17.5nC @ 10V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
1.15nF |
| Rds On Max |
10.8 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK40P03M1(T6RSS-Q)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
DP |
| Current - Continuous Drain (Id) @ 25℃ |
40A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
U-MOSVI-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
33W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
10.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1150pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
17.5nC @ 10V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
1.15nF |
| Rds On Max |
10.8 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK40P04M1(T6RSS-Q)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Operating Temperature |
150°C TJ |
| Mount |
Surface Mount, Through Hole |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
47W Tc |
| Number of Channels |
1 |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
U-MOSVI-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Form |
GULL WING |
| JESD-30 Code |
R-PSSO-G2 |
| Turn Off Delay Time |
63 ns |
| Element Configuration |
Single |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
27 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1920pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
47W |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Height |
2.3mm |
| Length |
10mm |
| Width |
6.1mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK40S10K3Z(T6L1,NQ
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Max Operating Temperature |
175°C |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
DPAK+ |
| Current - Continuous Drain (Id) @ 25℃ |
40A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
93W Tc |
| Operating Temperature |
175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
U-MOSIV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
16 Weeks |
| FET Type |
N-Channel |
| Min Operating Temperature |
-55°C |
| Rds On (Max) @ Id, Vgs |
18mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3110pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
61nC @ 10V |
| Rise Time |
22ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
3.11nF |
| Rds On Max |
18 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK46A08N1,S4X
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
46A Tc |
| Power Dissipation (Max) |
35W Tc |
| Turn Off Delay Time |
51 ns |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
U-MOSVIII-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Rise Time |
11ns |
| Vgs (Max) |
±20V |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.4m Ω @ 23A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Fall Time (Typ) |
17 ns |
| Continuous Drain Current (ID) |
46A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
80A |
| Drain to Source Breakdown Voltage |
80V |
| Radiation Hardening |
No |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
RoHS Compliant |