Showing 13705–13716 of 15245 results
Toshiba Semiconductor and Storage TK4A60DA(STA4,Q,M)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
3.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2010 |
| Series |
π-MOSVII |
| Part Status |
Active |
| Factory Lead Time |
12 Weeks |
| FET Type |
N-Channel |
| Max Power Dissipation |
35W |
| Rds On (Max) @ Id, Vgs |
2.2 Ω @ 1.8A, 10V |
| Vgs(th) (Max) @ Id |
4.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
490pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Rise Time |
18ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
3.5A |
| Gate to Source Voltage (Vgs) |
30V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK4P55D(T6RSS-Q)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Max Operating Temperature |
150°C |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
80W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
π-MOSVII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
12 Weeks |
| FET Type |
N-Channel |
| Min Operating Temperature |
-55°C |
| Rds On (Max) @ Id, Vgs |
1.88Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id |
4.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
490pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Rise Time |
18ns |
| Drain to Source Voltage (Vdss) |
550V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
4A |
| Gate to Source Voltage (Vgs) |
30V |
| Input Capacitance |
490pF |
| Rds On Max |
1.88 Ω |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK4P55DA(T6RSS-Q)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Max Operating Temperature |
150°C |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D-Pak |
| Current - Continuous Drain (Id) @ 25℃ |
3.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
80W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
π-MOSVII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
12 Weeks |
| FET Type |
N-Channel |
| Min Operating Temperature |
-55°C |
| Rds On (Max) @ Id, Vgs |
2.45Ohm @ 1.8A, 10V |
| Vgs(th) (Max) @ Id |
4.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
9nC @ 10V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
550V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
3.5A |
| Gate to Source Voltage (Vgs) |
30V |
| Input Capacitance |
380pF |
| Rds On Max |
2.45 Ω |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK50P03M1(T6RSS-Q)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Max Operating Temperature |
150°C |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
DP |
| Current - Continuous Drain (Id) @ 25℃ |
50A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
47W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
U-MOSVI-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
16 Weeks |
| FET Type |
N-Channel |
| Min Operating Temperature |
-55°C |
| Rds On (Max) @ Id, Vgs |
7.5mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1700pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
25.3nC @ 10V |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
50A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
1.7nF |
| Rds On Max |
7.5 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK58A06N1,S4X
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Power Dissipation (Max) |
35W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
58A Tc |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
12 Weeks |
| Turn Off Delay Time |
56 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
U-MOSVIII-H |
| Part Status |
Active |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| ECCN Code |
EAR99 |
| Gate Charge (Qg) (Max) @ Vgs |
46nC @ 10V |
| Rise Time |
11ns |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
33 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.4m Ω @ 29A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3400pF @ 30V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
17 ns |
| Continuous Drain Current (ID) |
58A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK5Q60W,S1VQ
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-251-3 Stub Leads, IPak |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
5.4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
60W Tc |
| Turn Off Delay Time |
50 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
DTMOSIV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
900mOhm |
| Element Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 2.7A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 270μA |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs |
10.5nC @ 10V |
| Rise Time |
18ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
5.4A |
| Gate to Source Voltage (Vgs) |
30V |
| FET Feature |
Super Junction |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK60S06K3L(T6L1,NQ
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Operating Temperature |
175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
88W Tc |
| Reference Standard |
AEC-Q101 |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
U-MOSIV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
13 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
24ns |
| Drain to Source Voltage (Vdss) |
60V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
60A |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
120A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
89 mJ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK6P65W,RQ
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Series |
DTMOSIV |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
5.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
60W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2015 |
| Factory Lead Time |
16 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.05 Ω @ 2.9A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 180μA |
| Input Capacitance (Ciss) (Max) @ Vds |
390pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
5.8A |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK6R7P06PL,RQ
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Series |
U-MOSIX-H |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
46A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
66W Tc |
| Operating Temperature |
175°C |
| Packaging |
Tape & Reel (TR) |
| Published |
2017 |
| Factory Lead Time |
16 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.7m Ω @ 23A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 300μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1990pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK7A55D(STA4,Q,M)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220SIS |
| Current - Continuous Drain (Id) @ 25℃ |
7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
35W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
1998 |
| Series |
π-MOSVII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.25Ohm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
4.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
550V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
7A |
| Gate to Source Voltage (Vgs) |
30V |
| Input Capacitance |
700pF |
| Rds On Max |
1.25 Ω |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK7P60W,RVQ
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
60W Tc |
| Turn Off Delay Time |
55 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Series |
DTMOSIV |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Power Dissipation |
60W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 350μA |
| Input Capacitance (Ciss) (Max) @ Vds |
490pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Rise Time |
18ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
7A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| FET Feature |
Super Junction |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TK8A10K3,S5Q
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Series |
U-MOSIV |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Supplier Device Package |
TO-220SIS |
| Current - Continuous Drain (Id) @ 25℃ |
8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
18W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2010 |
| Factory Lead Time |
52 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
120mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
530pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
12.9nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
8A |
| Input Capacitance |
530pF |
| Rds On Max |
120 mΩ |
| RoHS Status |
RoHS Compliant |