Manufacturer	Toshiba Semiconductor and Storage
Min Operating Temperature	-55°C
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	DPAK
Current - Continuous Drain (Id) @ 25℃	8A Ta
Drive Voltage (Max Rds On, Min Rds On)	10V
Turn Off Delay Time	70 ns
Operating Temperature	150°C TJ
Power Dissipation (Max)	80W Tc
Packaging	Tape & Reel (TR)
Published	2014
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Mount	Surface Mount
Factory Lead Time	16 Weeks
Fall Time (Typ)	5.5 ns
Continuous Drain Current (ID)	8A
Vgs(th) (Max) @ Id	3.7V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 300V
Gate Charge (Qg) (Max) @ Vgs	18.5nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	600V
Vgs (Max)	±30V
FET Type	N-Channel
Element Configuration	Single
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Input Capacitance	570pF
FET Feature	Super Junction
Drain to Source Resistance	420mOhm
Rds On Max	500 mΩ
Rds On (Max) @ Id, Vgs	500mOhm @ 4A, 10V
RoHS Status	RoHS Compliant

Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Supplier Device Package	I-PAK
Current - Continuous Drain (Id) @ 25℃	7.8A Ta
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	80W Tc
Operating Temperature	150°C TJ
Packaging	Tube
Published	2014
Factory Lead Time	16 Weeks
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Part Status	Active
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	670mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 300V
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Drain to Source Voltage (Vdss)	650V
Vgs (Max)	±30V
Continuous Drain Current (ID)	7.8A
Input Capacitance	570pF
Rds On Max	670 mΩ
RoHS Status	RoHS Compliant

Manufacturer	Toshiba Semiconductor and Storage
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Supplier Device Package	TO-220SIS
Current - Continuous Drain (Id) @ 25℃	9A Ta
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	45W Tc
Operating Temperature	150°C TJ
Packaging	Tube
Published	2011
Series	π-MOSVII
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	830mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	600V
Vgs (Max)	±30V
Fall Time (Typ)	12 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	30V
Input Capacitance	1.2nF
Rds On Max	830 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant

Manufacturer	Toshiba Semiconductor and Storage
Part Status	Active
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Current - Continuous Drain (Id) @ 25℃	6.1A Ta
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	700mW Ta
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	U-MOSVI-H
Factory Lead Time	12 Weeks
Power Dissipation	2.2W
Moisture Sensitivity Level (MSL)	1 (Unlimited)
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	59m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id	2.3V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	2.4ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Fall Time (Typ)	3.2 ns
Continuous Drain Current (ID)	6.1A
Gate to Source Voltage (Vgs)	20V
Radiation Hardening	No
RoHS Status	RoHS Compliant

Discrete Semiconductors