Showing 13729–13740 of 15245 results
Toshiba Semiconductor and Storage TPC8066-H,LQ(S
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1W Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
U-MOSVII-H |
| Factory Lead Time |
12 Weeks |
| FET Type |
N-Channel |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Rise Time |
2.1ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
2.3 ns |
| Continuous Drain Current (ID) |
11A |
| Gate to Source Voltage (Vgs) |
20V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPC8126,LQ(CM
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.173, 4.40mm Width) |
| Number of Pins |
8 |
| Supplier Device Package |
8-SOP (5.5×6.0) |
| Current - Continuous Drain (Id) @ 25℃ |
11A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1W Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
U-MOSVI |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
10mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Rise Time |
8ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
+20V, -25V |
| Fall Time (Typ) |
65 ns |
| Continuous Drain Current (ID) |
11A |
| Gate to Source Voltage (Vgs) |
30V |
| Input Capacitance |
2.4nF |
| Rds On Max |
10 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPC8129,LQ(S
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
9A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1W Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
U-MOSVI |
| Factory Lead Time |
12 Weeks |
| FET Type |
P-Channel |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Rds On (Max) @ Id, Vgs |
22m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1650pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 10V |
| Rise Time |
8ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
+20V, -25V |
| Fall Time (Typ) |
42 ns |
| Continuous Drain Current (ID) |
9A |
| Gate to Source Voltage (Vgs) |
20V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPCA8009-H(TE12L,Q
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
1.6W Ta 45W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Part Status |
Obsolete |
| Mount |
Surface Mount |
| Reach Compliance Code |
unknown |
| Voltage - Rated DC |
150V |
| Current Rating |
7A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
350m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
600pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 10V |
| Rise Time |
7ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
7A |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Toshiba Semiconductor and Storage TPCA8051-H(T2L1,VM
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
28A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1.6W Ta 45W Tc |
| Operating Temperature |
150°C TJ |
| Number of Elements |
1 |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
U-MOSVI-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Rds On (Max) @ Id, Vgs |
9.4m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 1mA |
| JESD-30 Code |
S-PDSO-F5 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.8W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
FLAT |
| Input Capacitance (Ciss) (Max) @ Vds |
7540pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
91nC @ 10V |
| Drain to Source Voltage (Vdss) |
80V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
28A |
| Gate to Source Voltage (Vgs) |
20V |
| Avalanche Energy Rating (Eas) |
255 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPCA8055-H,LQ(M
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-SOP Advance (5×5) |
| Current - Continuous Drain (Id) @ 25℃ |
56A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1.6W Ta 70W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
U-MOSVII-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.9mOhm @ 28A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
7700pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
91nC @ 10V |
| Rise Time |
5.7ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
56A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
7.7nF |
| Rds On Max |
1.9 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPCA8062-H,LQ(CM
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-SOP Advance (5×5) |
| Current - Continuous Drain (Id) @ 25℃ |
28A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1.6W Ta 42W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
U-MOSVII-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.6mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 300μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Rise Time |
2.8ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9.5 ns |
| Continuous Drain Current (ID) |
28A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
2.9nF |
| Rds On Max |
5.6 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPCC8065-H,LQ(S
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
700mW Ta 18W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
U-MOSVII-H |
| Factory Lead Time |
12 Weeks |
| FET Type |
N-Channel |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Rds On (Max) @ Id, Vgs |
11.4m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1350pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
2ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
2.1 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
20V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPCC8093,L1Q
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Current - Continuous Drain (Id) @ 25℃ |
21A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Power Dissipation (Max) |
1.9W Ta 30W Tc |
| Operating Temperature |
150°C |
| Packaging |
Tape & Reel (TR) |
| Series |
U-MOSVII |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.8m Ω @ 10.5A, 4.5V |
| Vgs(th) (Max) @ Id |
1.2V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1860pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPCC8A01-H(TE12LQM
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Max Operating Temperature |
150°C |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-TSON Advance (3.3×3.3) |
| Current - Continuous Drain (Id) @ 25℃ |
21A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
700mW Ta 30W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
U-MOSV-H |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| FET Type |
N-Channel |
| Min Operating Temperature |
-55°C |
| Rds On (Max) @ Id, Vgs |
9.9mOhm @ 10.5A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
2.2ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.4 ns |
| Continuous Drain Current (ID) |
21A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
1.9nF |
| Rds On Max |
9.9 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPCF8104(TE85L,F,M
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Power Dissipation |
2.5W |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SMD, Flat Lead |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
6A Ta |
| Power Dissipation (Max) |
700mW Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2009 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 3A, 10V |
| FET Type |
P-Channel |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1760pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Rise Time |
2.8ns |
| Drain to Source Voltage (Vdss) |
30V |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
6A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-30V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPCP8004(TE85L,F)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SMD, Flat Lead |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
8.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
840mW Ta |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
U-MOSIV |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 4.2A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1270pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Rise Time |
12ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
8.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |