Showing 13741–13752 of 15245 results
Toshiba Semiconductor and Storage TPH4R10ANL,L1Q
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Series |
U-MOSVIII-H |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Current - Continuous Drain (Id) @ 25℃ |
92A Ta 70A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.5W Ta 67W Tc |
| Operating Temperature |
150°C |
| Packaging |
Tape & Reel (TR) |
| Factory Lead Time |
12 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.1m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6.3nF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPH5200FNH,L1Q
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-SOP Advance (5×5) |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
78W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2015 |
| Series |
U-MOSVIII-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
52mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2200pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
26A |
| Input Capacitance |
2.2nF |
| Rds On Max |
52 mΩ |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPH5R906NH,L1Q
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Published |
2012 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
28A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
1.6W Ta 57W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Factory Lead Time |
12 Weeks |
| Part Status |
Active |
| Series |
U-MOSVIII-H |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.9m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 300μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3100pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
28A |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPN2R304PL,L1Q
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-TSON Advance (3.3×3.3) |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
630mW Ta 104W Tc |
| Operating Temperature |
175°C |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Series |
U-MOSIX-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.3mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 0.3mA |
| Input Capacitance (Ciss) (Max) @ Vds |
3600pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Input Capacitance |
3.6nF |
| Rds On Max |
2.3 mΩ |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPN3R704PL,L1Q
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
630mW Ta 86W Tc |
| Operating Temperature |
175°C |
| Packaging |
Tape & Reel (TR) |
| Series |
U-MOSIX-H |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.7m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 0.2mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPN7R506NH,L1Q
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Power Dissipation (Max) |
700mW Ta 42W Tc |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Supplier Device Package |
8-TSON Advance (3.3×3.3) |
| Current - Continuous Drain (Id) @ 25℃ |
26A Tc |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
12 Weeks |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Series |
U-MOSVIII-H |
| Part Status |
Active |
| Drive Voltage (Max Rds On, Min Rds On) |
6.5V 10V |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.6 ns |
| Rds On (Max) @ Id, Vgs |
7.5mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
| Rise Time |
5.7ns |
| Drain to Source Voltage (Vdss) |
60V |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Continuous Drain Current (ID) |
26A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Input Capacitance |
1.8nF |
| Drain to Source Resistance |
16mOhm |
| Rds On Max |
7.5 mΩ |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPW4R50ANH,L1Q
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
92A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
800mW Ta 142W Tc |
| Turn Off Delay Time |
52 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
U-MOSVIII-H |
| Factory Lead Time |
16 Weeks |
| Number of Channels |
1 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 46A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
5200pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
| Rise Time |
9.6ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
92A |
| Gate to Source Voltage (Vgs) |
20V |
| RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage TPWR8503NL,L1Q
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Published |
2015 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
150A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
800mW Ta 142W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Factory Lead Time |
16 Weeks |
| Part Status |
Active |
| Series |
U-MOSVIII-H |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
0.85m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
6900pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
74nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
150A |
| RoHS Status |
RoHS Compliant |
Toshiba SSM6K824R，LF
In stock
| Manufacturer |
Toshiba |
|---|---|
| Operating Temperature |
150°C |
| Package / Case |
6-SMD, Flat Leads |
| Supplier Device Package |
6-TSOP-F |
| Base Product Number |
SSM6K824 |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V, 4.5V |
| Power Dissipation (Max) |
1.5W (Ta) |
| Product Status |
Active |
| Mounting Type |
Surface Mount |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs |
33mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
410 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C |
6A (Ta) |
| Gate Charge (Qg) (Max) @ Vgs |
3.6 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) |
20 V |
| Vgs (Max) |
±8V |