Showing 13837–13848 of 15245 results
Vishay General Semiconductor – Diodes Division VS-ENV020F65U
In stock
| Manufacturer |
Vishay |
|---|---|
| Package / Case |
EMIPAK |
| Mounting Style |
Press Fit |
| Brand |
Vishay Semiconductors |
| Maximum Operating Temperature |
+ 175 C |
| Package |
Box |
| Product Status |
Active |
| Transistor Polarity |
N-Channel |
| Packaging |
Bulk |
| Series |
* |
| Type |
PressFit Power Module |
| Subcategory |
Discrete Semiconductor Modules |
| Configuration |
1-Phase Bridge |
| Product Type |
Discrete Semiconductor Modules |
| Vf - Forward Voltage |
1.7 V |
| Product Category |
Discrete Semiconductor Modules |
Vishay General Semiconductor – Diodes Division VS-ENV020M120M
In stock
| Manufacturer |
Vishay |
|---|---|
| Package / Case |
EMIPAK |
| Mounting Style |
Press Fit |
| Brand |
Vishay Semiconductors |
| Maximum Operating Temperature |
+ 150 C |
| Package |
Box |
| Product Status |
Active |
| Transistor Polarity |
N-Channel |
| Packaging |
Bulk |
| Series |
* |
| Type |
PressFit Power Module |
| Subcategory |
Discrete Semiconductor Modules |
| Configuration |
1-Phase Bridge |
| Output Current |
33 A |
| Product Type |
Discrete Semiconductor Modules |
| Vf - Forward Voltage |
1.29 V |
| Product Category |
Discrete Semiconductor Modules |
Vishay General Semiconductor – Diodes Division VS-ENW30S120T
In stock
| Manufacturer |
Vishay |
|---|---|
| Packaging |
Bulk |
| Mounting Style |
Press Fit |
| Brand |
Vishay Semiconductors |
| Maximum Operating Temperature |
+ 175 C |
| Package |
Box |
| Product Status |
Active |
| Transistor Polarity |
N-Channel |
| Package / Case |
EMIPAK |
| Type |
Mosfet & Diode Power Modules |
| Series |
* |
| Subcategory |
Discrete Semiconductor Modules |
| Technology |
SiC |
| Configuration |
1-Phase Bridge |
| Output Current |
67 A |
| Product Type |
Discrete Semiconductor Modules |
| Vf - Forward Voltage |
1.35 V |
| Product Category |
Discrete Semiconductor Modules |
Vishay General Semiconductor – Diodes Division VS-ENZ025C60N
In stock
| Manufacturer |
Vishay |
|---|---|
| Package / Case |
EMIPAK |
| Mounting Style |
Press Fit |
| Brand |
Vishay Semiconductors |
| Maximum Operating Temperature |
+ 150 C |
| Package |
Box |
| Product Status |
Active |
| Transistor Polarity |
N-Channel |
| Packaging |
Bulk |
| Series |
* |
| Type |
PressFit Power Module |
| Subcategory |
Discrete Semiconductor Modules |
| Configuration |
1-Phase Bridge |
| Rise Time |
26 ns |
| Product Type |
Discrete Semiconductor Modules |
| Product Category |
Discrete Semiconductor Modules |
Vishay General Semiconductor – Diodes Division VS-GT55LA120UX
In stock
| Manufacturer |
Vishay |
|---|---|
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Supplier Device Package |
SOT-227 |
| Mounting Style |
Screw Mounts |
| Brand |
Vishay Semiconductors |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single Chopper |
| Power - Max |
291 W |
| Input |
Standard |
| Product Type |
IGBT Transistors |
| Current - Collector Cutoff (Max) |
50 μA |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
68 A |
| Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 50A |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Product Category |
IGBT Transistors |
Vishay General Semiconductor – Diodes Division VS-GT55NA120UX
In stock
| Manufacturer |
Vishay |
|---|---|
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Supplier Device Package |
SOT-227 |
| Mounting Style |
Screw Mounts |
| Brand |
Vishay Semiconductors |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single Chopper |
| Power - Max |
291 W |
| Input |
Standard |
| Product Type |
IGBT Transistors |
| Current - Collector Cutoff (Max) |
50 μA |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
68 A |
| Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 50A |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Product Category |
IGBT Transistors |
Vishay General Semiconductor – Diodes Division VS-GT75YF120UT
In stock
| Manufacturer |
Vishay |
|---|---|
| Subcategory |
IGBTs |
| Package / Case |
Module |
| Mounting Style |
Screw Mounts |
| Brand |
Vishay Semiconductors |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Package |
Box |
| Product Status |
Active |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Packaging |
Bulk |
| Mounting Type |
Chassis Mount |
| Configuration |
Full Bridge |
| Technology |
Si |
| Power - Max |
431 W |
| Input |
Standard |
| Product Type |
IGBT Transistors |
| Current - Collector Cutoff (Max) |
100 μA |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
118 A |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
Yes |
| Product Category |
IGBT Transistors |
Vishay General Semiconductor – Diodes Division VS-GT90DA120U
In stock
| Manufacturer |
Vishay |
|---|---|
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Supplier Device Package |
SOT-227 |
| Mounting Style |
Screw Mounts |
| Brand |
Vishay Semiconductors |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Power - Max |
781 W |
| Input |
Standard |
| Product Type |
IGBT Transistors |
| Current - Collector Cutoff (Max) |
100 μA |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
169 A |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Product Category |
IGBT Transistors |
Vishay General Semiconductor – Diodes Division VS-GT90SA120U
In stock
| Manufacturer |
Vishay |
|---|---|
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Supplier Device Package |
SOT-227 |
| Mounting Style |
Screw Mounts |
| Brand |
Vishay Semiconductors |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Power - Max |
781 W |
| Input |
Standard |
| Product Type |
IGBT Transistors |
| Current - Collector Cutoff (Max) |
100 μA |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
169 A |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| NTC Thermistor |
No |
| Product Category |
IGBT Transistors |
Vishay IRFZ48
In stock
| Manufacturer |
Vishay |
|---|---|
| Packaging |
Bulk |
| Surface Mount |
NO |
| Number of Pins |
3 |
| Weight |
6.000006 g |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Package |
TO-220AB |
| Package Shape |
RECTANGULAR |
| Turn-Off Delay Time |
210 ns |
| Turn On Delay Time |
8.1 NanoSeconds |
| Current Rating |
50 A |
| Mount |
Through Hole |
| JESD-609 Code |
e0 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Max Operating Temperature |
175 °C |
| Min Operating Temperature |
-55 °C |
| Subcategory |
FET General Purpose Power |
| Max Power Dissipation |
190 W |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
225 |
| Reach Compliance Code |
compliant |
| Voltage Rating (DC) |
60 V |
| JESD-30 Code |
R-PSFM-T3 |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20 V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Transistor Application |
SWITCHING |
| Circuit Type |
N-Channel |
| Rise Time |
250 ns |
| Drain to Source Voltage (Vdss) |
60 V |
| Polarity/Channel Type |
N-CHANNEL |
| Continuous Drain Current (ID) |
50 A |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Drain Current-Max (Abs) (ID) |
50 A |
| Drain-source On Resistance-Max |
0.018 Ω |
| DS Breakdown Voltage-Min |
60 V |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
190 W |
| Drain to Source Resistance |
18 mΩ |
| Power Dissipation Ambient-Max |
190 W |
| Height |
9.01 mm |
| Length |
10.41 mm |
| Width |
4.7 mm |
| Radiation Hardening |
No |
| Lead Free |
Contains Lead |
Vishay J108-E3
In stock
| Manufacturer |
Vishay Intertechnologies |
|---|---|
| Mount |
Through Hole |
| Surface Mount |
NO |
| Number of Pins |
3 |
| JESD-609 Code |
e3 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Subcategory |
Other Transistors |
| Reach Compliance Code |
unknown |
| Current Rating |
50 mA |
| Element Configuration |
Single |
| Power Dissipation |
350 mW |
| Polarity/Channel Type |
N-CHANNEL |
| Continuous Drain Current (ID) |
80 mA |
| Gate to Source Voltage (Vgs) |
-25 V |
| FET Technology |
JUNCTION |
| Power Dissipation-Max (Abs) |
0.4 W |
| Drain to Source Resistance |
8 Ω |