Showing 14137–14148 of 15245 results
Vishay Semiconductor Diodes Division VSIB660-E3/45
In stock
| Manufacturer |
Vishay Semiconductor Diodes Division |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
4-SIP, GSIB-5S |
| Number of Pins |
4 |
| Supplier Device Package |
GSIB-5S |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Diode Type |
Single Phase |
| Current - Reverse Leakage @ Vr |
10μA @ 600V |
| Voltage - Forward (Vf) (Max) @ If |
950mV @ 3A |
| Max Reverse Leakage Current |
10μA |
| Max Surge Current |
180A |
| Current - Average Rectified (Io) |
2.8A |
| Forward Voltage |
950mV |
| Peak Non-Repetitive Surge Current |
180A |
| Voltage - Peak Reverse (Max) |
600V |
| Height |
20mm |
| Length |
30mm |
| Width |
4.6mm |
| RoHS Status |
ROHS3 Compliant |
Vishay Semiconductor Diodes Division W04G-E4/51
In stock
| Manufacturer |
Vishay Semiconductor Diodes Division |
|---|---|
| Number of Elements |
1 |
| Mounting Type |
Through Hole |
| Package / Case |
4-Circular, WOG |
| Number of Pins |
4 |
| Weight |
453.59237mg |
| Diode Element Material |
SILICON |
| Operating Temperature |
'-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2008 |
| JESD-609 Code |
e4 |
| Part Status |
Active |
| Pbfree Code |
yes |
| Number of Terminations |
4 |
| Terminal Finish |
Silver (Ag) |
| Additional Feature |
UL RECOGNIZED |
| Capacitance |
14pF |
| Voltage - Rated DC |
400V |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Current Rating |
1.5A |
| Base Part Number |
W04 |
| Pin Count |
4 |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Peak Reverse Current |
5μA |
| Output Current |
1.5A |
| Voltage - Forward (Vf) (Max) @ If |
1V @ 1A |
| Case Connection |
ISOLATED |
| Forward Current |
1.5A |
| Max Reverse Leakage Current |
5μA |
| Max Surge Current |
50A |
| Breakdown Voltage |
400V |
| Forward Voltage |
1V |
| Average Rectified Current |
1.5A |
| Number of Phases |
1 |
| Diode Type |
Single Phase |
| Element Configuration |
Single |
| Max Junction Temperature (Tj) |
150°C |
| Diameter |
9mm |
| Height |
5.6mm |
| Length |
9.86mm |
| Width |
8.84mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Current - Reverse Leakage @ Vr |
5μA @ 400V |
| Lead Free |
Lead Free |
Vishay Semiconductor Diodes Division W06G-E4/51
In stock
| Manufacturer |
Vishay Semiconductor Diodes Division |
|---|---|
| Part Status |
Active |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
4-Circular, WOG |
| Number of Pins |
4 |
| Diode Element Material |
SILICON |
| Operating Temperature |
'-55°C~150°C TJ |
| Packaging |
Bulk |
| Published |
2011 |
| JESD-609 Code |
e4 |
| Pin Count |
4 |
| Factory Lead Time |
8 Weeks |
| Number of Terminations |
4 |
| Terminal Finish |
Silver (Ag) |
| Additional Feature |
UL RECOGNIZED |
| Capacitance |
14pF |
| Voltage - Rated DC |
600V |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Current Rating |
1.5A |
| Base Part Number |
W06 |
| Pbfree Code |
yes |
| Number of Elements |
1 |
| Average Rectified Current |
1.5A |
| Number of Phases |
1 |
| Current - Reverse Leakage @ Vr |
5μA @ 600V |
| Output Current |
1.5A |
| Voltage - Forward (Vf) (Max) @ If |
1V @ 1A |
| Case Connection |
ISOLATED |
| Forward Current |
1.5A |
| Max Reverse Leakage Current |
5μA |
| Max Surge Current |
50A |
| Breakdown Voltage |
600V |
| Forward Voltage |
1V |
| Element Configuration |
Single |
| Diode Type |
Single Phase |
| Peak Reverse Current |
5μA |
| Diameter |
9mm |
| Height |
5.6mm |
| Length |
9.86mm |
| Width |
8.84mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay SIHF630STRL-GE3
In stock
| Manufacturer |
Vishay |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
Cylinder |
| Supplier Device Package |
— |
| Channel Mode |
Enhancement |
| Maximum Operating Temperature |
+150 °C |
| Minimum Operating Temperature |
-55 °C |
| Number of Elements per Chip |
1 |
| Package Type |
D2PAK (TO-263) |
| Operating Temperature |
-40°C ~ 105°C |
| Series |
MediaSensor™ |
| Part Status |
Active |
| Voltage - Supply |
5V |
| Output |
0.5 V ~ 4.5 V |
| Pin Count |
3 |
| Termination Style |
M12, 4 Pin |
| Output Type |
Analog Voltage |
| Accuracy |
±0.5% |
| Operating Pressure |
3000 PSI (20684.27 kPa) |
| Pressure Type |
Absolute |
| Port Style |
Threaded |
| Port Size |
Female – 7/16 (11.11mm) UNF |
| Maximum Pressure |
— |
| Channel Type |
N |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
Vishay SIHP150N60E-GE3
In stock
| Manufacturer |
Vishay |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| Base Product Number |
SIHP150 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Mfr |
Vishay Siliconix |
| Package |
Tube |
| Power Dissipation (Max) |
179W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Series |
E |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
155mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
1514 pF @ 100 V |
| Current - Continuous Drain (Id) @ 25°C |
22A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
36 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
600 V |
| Vgs (Max) |
±30V |
Vishay SIHP155N60EF-GE3
In stock
| Manufacturer |
Vishay |
|---|---|
| Id - Continuous Drain Current |
21 A |
| Product Status |
Active |
| Power Dissipation (Max) |
179W (Tc) |
| Pd - Power Dissipation |
179 W |
| Package |
Tube |
| Minimum Operating Temperature |
– 55 C |
| Mfr |
Vishay Siliconix |
| Qg - Gate Charge |
25 nC |
| Maximum Operating Temperature |
+ 150 C |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Channel Mode |
Enhancement |
| Base Product Number |
SIHP155 |
| Mounting Style |
Through Hole |
| Supplier Device Package |
TO-220AB |
| Package / Case |
TO-220-3 |
| Mounting Type |
Through Hole |
| Transistor Polarity |
N-Channel |
| FET Type |
N-Channel |
| Drain to Source Voltage (Vdss) |
600 V |
| Gate Charge (Qg) (Max) @ Vgs |
38 nC @ 10 V |
| Current - Continuous Drain (Id) @ 25°C |
21A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds |
1465 pF @ 100 V |
| Vgs(th) (Max) @ Id |
5V @ 250µA |
| Rds On (Max) @ Id, Vgs |
155mOhm @ 10A, 10V |
| Number of Channels |
1 Channel |
| Rds On - Drain-Source Resistance |
136 mOhms |
| Technology |
MOSFET (Metal Oxide) |
| Series |
EF |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Vgs th - Gate-Source Threshold Voltage |
5 V |
| Vgs - Gate-Source Voltage |
– 30 V, + 30 V |
| Vds - Drain-Source Breakdown Voltage |
600 V |
| Vgs (Max) |
±20V |
Vishay Siliconix 2N4117A-2
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AF, TO-72-4 Metal Can |
| Number of Pins |
4 |
| Supplier Device Package |
TO-206AF (TO-72) |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Bulk |
| Published |
2009 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
300mW |
| Element Configuration |
Single |
| Power - Max |
300mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
| Continuous Drain Current (ID) |
90μA |
| Gate to Source Voltage (Vgs) |
-40V |
| Input Capacitance |
3pF |
| Drain to Source Resistance |
11kOhm |
| Current - Drain (Idss) @ Vds (Vgs=0) |
30μA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
600mV @ 1nA |
| Voltage - Breakdown (V(BR)GSS) |
40V |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix 2N4117A-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Published |
2009 |
| Package / Case |
TO-206AF, TO-72-4 Metal Can |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Breakdown Voltage / V |
-70V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
BOTTOM |
| Packaging |
Bulk |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Power Dissipation |
300mW |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate to Source Voltage (Vgs) |
-40V |
| Pin Count |
8 |
| Element Configuration |
Single |
| Operating Mode |
DEPLETION MODE |
| Power Dissipation |
300mW |
| FET Type |
N-Channel |
| Transistor Application |
AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
| FET Technology |
JUNCTION |
| Feedback Cap-Max (Crss) |
1.5 pF |
| Terminal Form |
WIRE |
| Current - Drain (Idss) @ Vds (Vgs=0) |
30μA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
600mV @ 1nA |
| Voltage - Breakdown (V(BR)GSS) |
40V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
O-MBCY-W4 |
| Lead Free |
Lead Free |
Vishay Siliconix 2N4118A
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Min Operating Temperature |
-55°C |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AF, TO-72-4 Metal Can |
| Number of Pins |
4 |
| Supplier Device Package |
TO-206AF (TO-72) |
| Breakdown Voltage / V |
-40V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Bulk |
| Published |
2009 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Factory Lead Time |
10 Weeks |
| Current Rating |
50mA |
| Max Power Dissipation |
300mW |
| Element Configuration |
Single |
| Power Dissipation |
300mW |
| Power - Max |
300mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
| Gate to Source Voltage (Vgs) |
-40V |
| Input Capacitance |
3pF |
| Drain to Source Resistance |
7kOhm |
| Current - Drain (Idss) @ Vds (Vgs=0) |
80μA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
1V @ 1nA |
| Voltage - Breakdown (V(BR)GSS) |
40V |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix 2N4118A-2
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Terminal Finish |
MATTE TIN |
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AF, TO-72-4 Metal Can |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Bulk |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Mount |
Through Hole |
| Terminal Position |
BOTTOM |
| Max Power Dissipation |
300mW |
| Terminal Form |
WIRE |
| Element Configuration |
Single |
| Operating Mode |
DEPLETION MODE |
| FET Type |
N-Channel |
| Transistor Application |
AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
| Gate to Source Voltage (Vgs) |
-40V |
| FET Technology |
JUNCTION |
| Feedback Cap-Max (Crss) |
1.5 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
80μA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
1V @ 1nA |
| Voltage - Breakdown (V(BR)GSS) |
40V |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |