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Discrete Semiconductors
Vishay Siliconix 2N6660-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Bulk |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-205AD, TO-39-3 Metal Can |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
990mA Tc |
Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
725mW Ta 6.25W Tc |
Peak Reflow Temperature (Cel) |
260 |
Operating Temperature |
-55°C~150°C TJ |
Published |
2007 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOW THRESHOLD |
Terminal Position |
BOTTOM |
Terminal Form |
WIRE |
Contact Plating |
Tin |
Factory Lead Time |
9 Weeks |
Continuous Drain Current (ID) |
1.1A |
Pin Count |
2 |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
725mW |
FET Type |
N-Channel |
Transistor Application |
AMPLIFIER |
Rds On (Max) @ Id, Vgs |
3 Ω @ 1A, 10V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
Vgs (Max) |
±20V |
Threshold Voltage |
1.7V |
Gate to Source Voltage (Vgs) |
20V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Drain Current-Max (Abs) (ID) |
0.99A |
Drain-source On Resistance-Max |
3Ohm |
Drain to Source Breakdown Voltage |
60V |
Nominal Vgs |
1.7 V |
Height |
6.6mm |
Length |
9.4mm |
Width |
8.15mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
Number of Channels |
1 |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix 2N6660JTXV02
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Terminal Form |
WIRE |
Package / Case |
TO-205AD, TO-39-3 Metal Can |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
990mA Tc |
Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Power Dissipation (Max) |
725mW Ta 6.25W Tc |
Published |
2009 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Position |
BOTTOM |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Power Dissipation |
725mW |
FET Type |
N-Channel |
Transistor Application |
AMPLIFIER |
Rds On (Max) @ Id, Vgs |
3 Ω @ 1A, 10V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Pin Count |
2 |
Continuous Drain Current (ID) |
990mA |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
0.99A |
Drain-source On Resistance-Max |
3Ohm |
DS Breakdown Voltage-Min |
60V |
Radiation Hardening |
No |
Operating Mode |
ENHANCEMENT MODE |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix 2N6661-2
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-205AD, TO-39-3 Metal Can |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
860mA Tc |
Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
Number of Elements |
1 |
Terminal Form |
WIRE |
Power Dissipation (Max) |
725mW Ta 6.25W Tc |
Packaging |
Tube |
Published |
2014 |
Pbfree Code |
no |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
4Ohm |
Terminal Position |
BOTTOM |
Contact Plating |
Lead, Tin |
Factory Lead Time |
26 Weeks |
Drain to Source Voltage (Vdss) |
90V |
Number of Channels |
1 |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
725mW |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
4 Ω @ 1A, 10V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
860mA |
Pin Count |
2 |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
0.86A |
DS Breakdown Voltage-Min |
90V |
Height |
6.6mm |
Length |
9.4mm |
Width |
8.15mm |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
Element Configuration |
Single |
Lead Free |
Contains Lead |
Vishay Siliconix 2N6661JAN02
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Published |
2016 |
Mounting Type |
Through Hole |
Package / Case |
TO-205AD, TO-39-3 Metal Can |
Number of Pins |
3 |
Current - Continuous Drain (Id) @ 25℃ |
860mA Tc |
Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
Power Dissipation (Max) |
725mW Ta 6.25W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Mount |
Through Hole |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Obsolete |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
4 Ω @ 1A, 10V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
Drain to Source Voltage (Vdss) |
90V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
860mA |
Gate to Source Voltage (Vgs) |
20V |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix 2N6661JTXL02
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tube |
Package / Case |
TO-205AD, TO-39-3 Metal Can |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
860mA Tc |
Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
725mW Ta 6.25W Tc |
Terminal Form |
WIRE |
Operating Temperature |
-55°C~150°C TJ |
Published |
2012 |
Pbfree Code |
no |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
HTS Code |
8541.21.00.95 |
Terminal Position |
BOTTOM |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
4 Ω @ 1A, 10V |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
Drain to Source Voltage (Vdss) |
90V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
860mA |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
0.86A |
Drain-source On Resistance-Max |
4Ohm |
DS Breakdown Voltage-Min |
90V |
Feedback Cap-Max (Crss) |
10 pF |
Pin Count |
2 |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix 2N7002K-T1-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Power Dissipation |
350mW |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Supplier Device Package |
SOT-23-3 (TO-236) |
Weight |
1.437803g |
Current - Continuous Drain (Id) @ 25℃ |
300mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
350mW Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Turn Off Delay Time |
35 ns |
Published |
2016 |
Series |
TrenchFET® |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
2Ohm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Element Configuration |
Single |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Input Capacitance |
30pF |
Max Junction Temperature (Tj) |
150°C |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
0.6nC @ 4.5V |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
300mA |
Threshold Voltage |
2.5V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
60V |
FET Type |
N-Channel |
Turn On Delay Time |
25 ns |
Drain to Source Resistance |
2Ohm |
Rds On Max |
2 Ω |
Nominal Vgs |
2 V |
Height |
1.12mm |
Length |
3.0226mm |
Width |
1.397mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Rds On (Max) @ Id, Vgs |
2Ohm @ 500mA, 10V |
Lead Free |
Lead Free |
Vishay Siliconix 2N7002K-T1-GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
1.437803g |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
300mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
350mW Ta |
Terminal Form |
GULL WING |
Factory Lead Time |
19 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Series |
TrenchFET® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
2Ohm |
Terminal Position |
DUAL |
Turn Off Delay Time |
35 ns |
Pin Count |
3 |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
190mA |
Element Configuration |
Single |
Current |
3A |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
350mW |
Turn On Delay Time |
25 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
2 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
0.6nC @ 4.5V |
Number of Channels |
1 |
Voltage |
60V |
Threshold Voltage |
2V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
60V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
2 V |
Height |
1.12mm |
Length |
3.04mm |
Width |
1.4mm |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |