Showing 14221–14232 of 15245 results

Discrete Semiconductors

Vishay Siliconix 2N5546JTXV01

In stock

SKU: 2N5546JTXV01-9
Manufacturer

Vishay Siliconix

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-71-6

Packaging

Tube

Published

2016

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

RoHS Status

Non-RoHS Compliant

Vishay Siliconix 2N5547JTX01

In stock

SKU: 2N5547JTX01-9
Manufacturer

Vishay Siliconix

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-71-6

Packaging

Tube

Published

2016

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

RoHS Status

Non-RoHS Compliant

Vishay Siliconix 2N5547JTXL01

In stock

SKU: 2N5547JTXL01-9
Manufacturer

Vishay Siliconix

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-71-6

Supplier Device Package

TO-71

Packaging

Tube

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

RoHS Status

Non-RoHS Compliant

Vishay Siliconix 2N5547JTXV01

In stock

SKU: 2N5547JTXV01-9
Manufacturer

Vishay Siliconix

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-71-6

Packaging

Tube

Published

2009

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

RoHS Status

Non-RoHS Compliant

Vishay Siliconix 2N6660-E3

In stock

SKU: 2N6660-E3-11
Manufacturer

Vishay Siliconix

Packaging

Bulk

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-205AD, TO-39-3 Metal Can

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

990mA Tc

Drive Voltage (Max Rds On, Min Rds On)

5V 10V

Number of Elements

1

Power Dissipation (Max)

725mW Ta 6.25W Tc

Peak Reflow Temperature (Cel)

260

Operating Temperature

-55°C~150°C TJ

Published

2007

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW THRESHOLD

Terminal Position

BOTTOM

Terminal Form

WIRE

Contact Plating

Tin

Factory Lead Time

9 Weeks

Continuous Drain Current (ID)

1.1A

Pin Count

2

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

725mW

FET Type

N-Channel

Transistor Application

AMPLIFIER

Rds On (Max) @ Id, Vgs

3 Ω @ 1A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

Vgs (Max)

±20V

Threshold Voltage

1.7V

Gate to Source Voltage (Vgs)

20V

Time@Peak Reflow Temperature-Max (s)

40

Drain Current-Max (Abs) (ID)

0.99A

Drain-source On Resistance-Max

3Ohm

Drain to Source Breakdown Voltage

60V

Nominal Vgs

1.7 V

Height

6.6mm

Length

9.4mm

Width

8.15mm

Radiation Hardening

No

REACH SVHC

Unknown

Number of Channels

1

RoHS Status

ROHS3 Compliant

Vishay Siliconix 2N6660JAN02

In stock

SKU: 2N6660JAN02-9
Manufacturer

Vishay Siliconix

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

RoHS Status

Non-RoHS Compliant

Vishay Siliconix 2N6660JTXV02

In stock

SKU: 2N6660JTXV02-11
Manufacturer

Vishay Siliconix

Terminal Form

WIRE

Package / Case

TO-205AD, TO-39-3 Metal Can

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

990mA Tc

Drive Voltage (Max Rds On, Min Rds On)

5V 10V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Power Dissipation (Max)

725mW Ta 6.25W Tc

Published

2009

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

BOTTOM

Mounting Type

Through Hole

Mount

Through Hole

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Power Dissipation

725mW

FET Type

N-Channel

Transistor Application

AMPLIFIER

Rds On (Max) @ Id, Vgs

3 Ω @ 1A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

Configuration

SINGLE WITH BUILT-IN DIODE

Pin Count

2

Continuous Drain Current (ID)

990mA

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

0.99A

Drain-source On Resistance-Max

3Ohm

DS Breakdown Voltage-Min

60V

Radiation Hardening

No

Operating Mode

ENHANCEMENT MODE

RoHS Status

Non-RoHS Compliant

Vishay Siliconix 2N6661-2

In stock

SKU: 2N6661-2-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-205AD, TO-39-3 Metal Can

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

860mA Tc

Drive Voltage (Max Rds On, Min Rds On)

5V 10V

Number of Elements

1

Terminal Form

WIRE

Power Dissipation (Max)

725mW Ta 6.25W Tc

Packaging

Tube

Published

2014

Pbfree Code

no

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

4Ohm

Terminal Position

BOTTOM

Contact Plating

Lead, Tin

Factory Lead Time

26 Weeks

Drain to Source Voltage (Vdss)

90V

Number of Channels

1

Operating Mode

ENHANCEMENT MODE

Power Dissipation

725mW

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

4 Ω @ 1A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

Vgs (Max)

±20V

Continuous Drain Current (ID)

860mA

Pin Count

2

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

0.86A

DS Breakdown Voltage-Min

90V

Height

6.6mm

Length

9.4mm

Width

8.15mm

Radiation Hardening

No

RoHS Status

Non-RoHS Compliant

Element Configuration

Single

Lead Free

Contains Lead

Vishay Siliconix 2N6661JAN02

In stock

SKU: 2N6661JAN02-11
Manufacturer

Vishay Siliconix

Published

2016

Mounting Type

Through Hole

Package / Case

TO-205AD, TO-39-3 Metal Can

Number of Pins

3

Current - Continuous Drain (Id) @ 25℃

860mA Tc

Drive Voltage (Max Rds On, Min Rds On)

5V 10V

Power Dissipation (Max)

725mW Ta 6.25W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Mount

Through Hole

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Obsolete

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

4 Ω @ 1A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

Drain to Source Voltage (Vdss)

90V

Vgs (Max)

±20V

Continuous Drain Current (ID)

860mA

Gate to Source Voltage (Vgs)

20V

RoHS Status

Non-RoHS Compliant

Vishay Siliconix 2N6661JTXL02

In stock

SKU: 2N6661JTXL02-11
Manufacturer

Vishay Siliconix

Packaging

Tube

Package / Case

TO-205AD, TO-39-3 Metal Can

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

860mA Tc

Drive Voltage (Max Rds On, Min Rds On)

5V 10V

Number of Elements

1

Power Dissipation (Max)

725mW Ta 6.25W Tc

Terminal Form

WIRE

Operating Temperature

-55°C~150°C TJ

Published

2012

Pbfree Code

no

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

HTS Code

8541.21.00.95

Terminal Position

BOTTOM

Mounting Type

Through Hole

Mount

Through Hole

Vgs(th) (Max) @ Id

2V @ 1mA

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

4 Ω @ 1A, 10V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

Drain to Source Voltage (Vdss)

90V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Vgs (Max)

±20V

Continuous Drain Current (ID)

860mA

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

0.86A

Drain-source On Resistance-Max

4Ohm

DS Breakdown Voltage-Min

90V

Feedback Cap-Max (Crss)

10 pF

Pin Count

2

RoHS Status

Non-RoHS Compliant

Vishay Siliconix 2N7002K-T1-E3

In stock

SKU: 2N7002K-T1-E3-11
Manufacturer

Vishay Siliconix

Power Dissipation

350mW

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Supplier Device Package

SOT-23-3 (TO-236)

Weight

1.437803g

Current - Continuous Drain (Id) @ 25℃

300mA Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

350mW Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Turn Off Delay Time

35 ns

Published

2016

Series

TrenchFET®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

2Ohm

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Number of Channels

1

Element Configuration

Single

Mounting Type

Surface Mount

Mount

Surface Mount

Input Capacitance

30pF

Max Junction Temperature (Tj)

150°C

Vgs(th) (Max) @ Id

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

0.6nC @ 4.5V

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Continuous Drain Current (ID)

300mA

Threshold Voltage

2.5V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

60V

FET Type

N-Channel

Turn On Delay Time

25 ns

Drain to Source Resistance

2Ohm

Rds On Max

2 Ω

Nominal Vgs

2 V

Height

1.12mm

Length

3.0226mm

Width

1.397mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Rds On (Max) @ Id, Vgs

2Ohm @ 500mA, 10V

Lead Free

Lead Free

Vishay Siliconix 2N7002K-T1-GE3

In stock

SKU: 2N7002K-T1-GE3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Weight

1.437803g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

300mA Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

350mW Ta

Terminal Form

GULL WING

Factory Lead Time

19 Weeks

Packaging

Tape & Reel (TR)

Published

2013

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

2Ohm

Terminal Position

DUAL

Turn Off Delay Time

35 ns

Pin Count

3

Vgs (Max)

±20V

Continuous Drain Current (ID)

190mA

Element Configuration

Single

Current

3A

Operating Mode

ENHANCEMENT MODE

Power Dissipation

350mW

Turn On Delay Time

25 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2 Ω @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

0.6nC @ 4.5V

Number of Channels

1

Voltage

60V

Threshold Voltage

2V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

60V

Max Junction Temperature (Tj)

150°C

Nominal Vgs

2 V

Height

1.12mm

Length

3.04mm

Width

1.4mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free