Showing 14233–14244 of 15245 results
Vishay Siliconix 3N163-2
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AF, TO-72-4 Metal Can |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
20V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375mW Ta |
| Terminal Form |
WIRE |
| Turn Off Delay Time |
25 ns |
| Packaging |
Tube |
| Published |
2009 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.21.00.95 |
| Terminal Position |
BOTTOM |
| Mount |
Through Hole |
| Contact Plating |
Lead, Tin |
| Input Capacitance (Ciss) (Max) @ Vds |
3.5pF @ 15V |
| JESD-30 Code |
O-MBCY-W4 |
| Configuration |
SINGLE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
SUBSTRATE |
| Turn On Delay Time |
5 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
250 Ω @ 100μA, 20V |
| Vgs(th) (Max) @ Id |
5V @ 10μA |
| Rise Time |
13ns |
| Drain to Source Voltage (Vdss) |
40V |
| Reach Compliance Code |
unknown |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
50mA |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
0.05A |
| Drain-source On Resistance-Max |
300Ohm |
| DS Breakdown Voltage-Min |
40V |
| Feedback Cap-Max (Crss) |
0.7 pF |
| Qualification Status |
Not Qualified |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix 3N163-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AF, TO-72-4 Metal Can |
| Number of Pins |
4 |
| Supplier Device Package |
TO-72 |
| Current - Continuous Drain (Id) @ 25℃ |
50mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
20V |
| Power Dissipation (Max) |
375mW Ta |
| Element Configuration |
Single |
| Turn Off Delay Time |
25 ns |
| Packaging |
Bulk |
| Published |
2000 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
250Ohm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Contact Plating |
Tin |
| Threshold Voltage |
-2.5V |
| Turn On Delay Time |
5 ns |
| Rds On (Max) @ Id, Vgs |
250Ohm @ 100μA, 20V |
| Vgs(th) (Max) @ Id |
5V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3.5pF @ 15V |
| Rise Time |
13ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
-50mA |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
-40V |
| Power Dissipation |
375mW |
| Input Capacitance |
3.5pF |
| Drain to Source Resistance |
250Ohm |
| Rds On Max |
250 Ω |
| Nominal Vgs |
-2.5 V |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
P-Channel |
| Lead Free |
Lead Free |
Vishay Siliconix IRC530PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-5 |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
88W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Voltage - Rated DC |
100V |
| Current Rating |
14A |
| Power Dissipation |
88W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 8.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| FET Feature |
Current Sensing |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix IRC644PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Qualification Status |
Not Qualified |
| Package / Case |
TO-220-5 |
| Weight |
3.000003g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
49 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
1997 |
| Series |
HEXFET® |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
5 |
| JESD-30 Code |
R-PSFM-T5 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
29 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 8.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
37ns |
| Drain to Source Voltage (Vdss) |
250V |
| Number of Channels |
1 |
| Configuration |
SINGLE |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.28Ohm |
| Pulsed Drain Current-Max (IDM) |
56A |
| DS Breakdown Voltage-Min |
250V |
| Avalanche Energy Rating (Eas) |
550 mJ |
| FET Feature |
Current Sensing |
| Height |
9.02mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix IRC840PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-5 |
| Number of Pins |
5 |
| Weight |
3.000003g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
55 ns |
| Pin Count |
5 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
1997 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
22ns |
| Configuration |
SINGLE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
850m Ω @ 4.8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
67nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±20V |
| Qualification Status |
Not Qualified |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
8A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
8A |
| Pulsed Drain Current-Max (IDM) |
32A |
| FET Feature |
Current Sensing |
| Height |
9.02mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Number of Channels |
1 |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix IRF1405ZTRR
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Part Status |
Discontinued |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
230W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Mount |
Through Hole |
| FET Type |
N-Channel |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Rds On (Max) @ Id, Vgs |
4.9mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4780pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
75A |
| Input Capacitance |
4.78nF |
| Rds On Max |
4.9 mΩ |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRF3314STRL
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRF510L
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Part Status |
Obsolete |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-262-3 |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
5.6A Tc |
| Turn Off Delay Time |
15 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Turn On Delay Time |
6.9 ns |
| Mount |
Through Hole |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
3.7W |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Packaging |
Tube |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance (Ciss) (Max) @ Vds |
180pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
8.3nC @ 10V |
| Rise Time |
16ns |
| Drain to Source Voltage (Vdss) |
100V |
| Fall Time (Typ) |
9.4 ns |
| Continuous Drain Current (ID) |
5.6A |
| Rds On (Max) @ Id, Vgs |
540mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance |
180pF |
| Drain to Source Resistance |
540mOhm |
| Rds On Max |
540 mΩ |
| Height |
9.01mm |
| Length |
10.41mm |
| Width |
4.7mm |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRF520PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Element Configuration |
Single |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
9.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
19 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
60W Tc |
| Packaging |
Tube |
| Published |
1997 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
270mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
100V |
| Current Rating |
9.2A |
| Number of Channels |
1 |
| Contact Plating |
Tin |
| Factory Lead Time |
8 Weeks |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
360pF |
| Rds On (Max) @ Id, Vgs |
270mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
9.2A |
| Threshold Voltage |
4V |
| Turn On Delay Time |
8.8 ns |
| Power Dissipation |
60W |
| Recovery Time |
260 ns |
| Drain to Source Resistance |
270mOhm |
| Rds On Max |
270 mΩ |
| Nominal Vgs |
10 V |
| Height |
9.01mm |
| Length |
10.41mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Vishay Siliconix IRF520STRL
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-609 Code |
e0 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
3.7W Ta 60W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN LEAD |
| HTS Code |
8541.29.00.95 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Published |
2017 |
| Reach Compliance Code |
unknown |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
360pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
270m Ω @ 5.5A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
9.2A |
| Drain-source On Resistance-Max |
0.27Ohm |
| Pulsed Drain Current-Max (IDM) |
37A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix IRF530
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
88W Tc |
| Power Dissipation |
88W |
| Mount |
Through Hole |
| Packaging |
Tube |
| Published |
2011 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
160mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Turn Off Delay Time |
23 ns |
| Turn On Delay Time |
10 ns |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
670pF |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
670pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Rise Time |
34ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
160mOhm @ 8.4A, 10V |
| Drain to Source Resistance |
160mOhm |
| Rds On Max |
160 mΩ |
| Nominal Vgs |
2 V |
| Height |
9.01mm |
| Length |
10.41mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Vishay Siliconix IRF530PBF
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
88W Tc |
| Turn Off Delay Time |
23 ns |
| Power Dissipation |
88W |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2004 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| Resistance |
160mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
100V |
| Current Rating |
14A |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Drain to Source Breakdown Voltage |
100V |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
670pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
14A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Dual Supply Voltage |
100V |
| Input Capacitance |
670pF |
| Turn On Delay Time |
10 ns |
| Recovery Time |
280 ns |
| Drain to Source Resistance |
270mOhm |
| Rds On Max |
160 mΩ |
| Nominal Vgs |
4 V |
| Height |
9.01mm |
| Length |
10.41mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
160mOhm @ 8.4A, 10V |
| Lead Free |
Lead Free |